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| Number | Title | Issue Date |
| 7368393 | Chemical oxide removal of plasma damaged SiCOH low k dielectrics A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged r... | 05/06/2008 |
| 7368226 | Method for forming fine patterns of semiconductor device A method for forming fine patterns of a semiconductor device is provided, the method including forming a first lower layer pattern having a width of two minimum line width and a space pattern on a semiconductor substrate prior to a C-HALO implant process and etching... | 05/06/2008 |
| 7344993 | Low-pressure removal of photoresist and etch residue A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is appli... | 03/18/2008 |
| 7328617 | Air levitation apparatus with neutralization device, and neutralization method for levitation apparatus To reduce installation space for neutralization devices of neutralization of static electricity generated by work levitation air in an air levitation apparatus which levitates plate-shaped work by jettisoning of air. With an apparatus wherein multiple air jets are p... | 02/12/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7316783 | Method of wiring formation and method for manufacturing electronic components A method of wiring formation includes forming a feeder film partially on a substrate, forming on the substrate a plating base film via a physical film making method so that the plate base film partially overlaps the feeder film, forming a plated wiring on the platin... | 01/08/2008 |
| 7312157 | Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a da... | 12/25/2007 |
| 7273817 | Conditioning of a reaction chamber A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber during the etching of a photoresist layer of a semiconductor wafer within the reaction chamber and the environment is regulate... | 09/25/2007 |
| 7229930 | Selective etching of low-k dielectrics The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an underlying barrier/liner layer. The process comprises the step of expos... | 06/12/2007 |
| 7223060 | Device for simultaneously conveying and regulating the temperature of shaped parts The invention relates to a device for simultaneously conveying and regulating the temperature of shaped parts, comprising a conveying device, which is suited for advancing objects, and at least one blower by means of which the objects can be subjected to the action ... | 05/29/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7179751 | Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. T... | 02/20/2007 |
| 7172965 | Method for manufacturing semiconductor device After forming a stopper film on a semiconductor substrate having a copper wiring layer therein, an interlayer insulating film made of a low dielectric constant material is formed on the stopper film. Then, after forming a capping film on the interlayer insulating fi... | 02/06/2007 |
| 7134942 | Wafer processing method A wafer processing method for dividing a wafer having optical devices that are formed in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, along the dividing lines, which comprises a laser beam application step of app... | 11/14/2006 |
| 7134943 | Wafer processing method A wafer processing method for dividing a wafer having optical devices that are formed in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, along the dividing lines, comprising a laser beam application step of applying... | 11/14/2006 |
| 7125808 | Method for manufacturing non-volatile memory cells on a semiconductor substrate A method is described for manufacturing non-volatile memory cells on a semiconductive substrate having active areas bounded by portions of an insulating layer. A thin layer of tunnel oxide is formed and a first layer of conductive material is then deposited. A plura... | 10/24/2006 |
| 7122478 | Method of manufacturing a semiconductor device using a polysilicon etching mask A method of manufacturing a semiconductor device using a polysilicon layer as an etching mask includes: (a) forming an interlayer dielectric over a semiconductor substrate; (b) forming a polysilicon layer pattern over the interlayer dielectric; (c) forming a contact... | 10/17/2006 |
| 7112534 | Process for low k dielectric plasma etching with high selectivity to deep uv photoresist A method of forming a microelectronic structure and its associated structures is described. That method comprises forming and patterning a deep uv resist layer on a substrate, etching the substrate in a plasma generated from a gas comprising a carbon to fluorine rat... | 09/26/2006 |
| 7101795 | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor depo... | 09/05/2006 |
| 7085616 | Atomic layer deposition apparatus A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer sup... | 08/01/2006 |
| 7074720 | Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion 18a formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material... | 07/11/2006 |
| 7037842 | Method and apparatus for dissolving a gas into a liquid for single wet wafer processing A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liq... | 05/02/2006 |
| 7029992 | Low oxygen content photoresist stripping process for low dielectric constant materials A plasma containing 5–10% oxygen and 90–95% of an inert gas strips photoresist from over a low-k dielectric material formed on or in a semiconductor device. The inert gas may be nitrogen, hydrogen, or a combination thereof, or it may include at least one of nitr... | 04/18/2006 |
| 7022627 | Method for the heat treatment of substrates A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surface... | 04/04/2006 |
| 7022948 | Chamber for uniform substrate heating Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed ... | 04/04/2006 |
| 7022620 | Conditioning of a reaction chamber A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber and the environment is regulated to form the polymer on the interior surface of the chamber. Methods for the manufacture of in... | 04/04/2006 |
| 6998014 | Apparatus and method for plasma assisted deposition Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a powe... | 02/14/2006 |
| 6998579 | Chamber for uniform substrate heating In a first aspect, a first apparatus is provided for heating substrates. The first apparatus includes (1) a chamber having a bottom portion and a top portion; (2) a plurality of heated supports disposed within the chamber to support at least two substrates thereon; ... | 02/14/2006 |
| 6992367 | Process for forming a buried cavity in a semiconductor material wafer and a buried cavity The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45° with respect to the f... | 01/31/2006 |
| 6991739 | Method of photoresist removal in the presence of a dielectric layer having a low k-value A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidiz... | 01/31/2006 |
| 6967173 | Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. T... | 11/22/2005 |
| 6953531 | Methods of etching silicon-oxide-containing materials The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a ... | 10/11/2005 |
| 6951804 | Formation of a tantalum-nitride layer A method of forming a tantalum-nitride layer (204) for integrated circuit fabrication is disclosed. Alternating or co-reacting pulses of a tantalum containing precursor and a nitrogen containing precursor are provided to a chamber (100) to form layers ... | 10/04/2005 |
| 6949461 | Method for depositing a metal layer on a semiconductor interconnect structure Disclosed is a method for depositing a metal layer on an interconnect structure for a semiconductor wafer. In the method, a metal conductor is covered by a dielectric layer. The dielectric layer is patterned so as to expose the metal conductor. A liner layer is then... | 09/27/2005 |
| 6949460 | Line edge roughness reduction for trench etch A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench ... | 09/27/2005 |
| 6936906 | Integration of barrier layer and seed layer The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed laye... | 08/30/2005 |
| 6930041 | Photo-assisted method for semiconductor fabrication The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of phot... | 08/16/2005 |
| 6921695 | Etching method for forming a square cornered polysilicon wordline electrode A split gate FET wordline electrode structure and method for forming the same including an improved polysilicon etching process including providing a semiconductor wafer process surface comprising first exposed polysilicon portions and adjacent oxide portions; formi... | 07/26/2005 |
| 6916398 | Gas delivery apparatus and method for atomic layer deposition One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or mo... | 07/12/2005 |
