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| Number | Title | Issue Date |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7312157 | Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a da... | 12/25/2007 |
| 7288488 | Method for resist strip in presence of regular low k and/or porous low k dielectric materials A two-step process is disclosed for stripping photoresist material from a substrate, wherein the substrate includes a low k dielectric material underlying the photoresist material and a polymer film overlying both the photoresist material and the low k dielectric ma... | 10/30/2007 |
| 7273638 | High density plasma oxidation A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-b... | 09/25/2007 |
| 7238616 | Photo-assisted method for semiconductor fabrication The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of phot... | 07/03/2007 |
| 7208421 | Method and apparatus for production of metal film or the like In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a diff... | 04/24/2007 |
| 7157375 | Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The ... | 01/02/2007 |
| 7109124 | Solid state plasma antenna A solid state electronically steerable antenna can be generated from a sheet of semiconductor material by forming a pattern of localised plasma regions in the sheet, either by injecting carriers into, or by generating carriers in, those localised regions. A suitable... | 09/19/2006 |
| 7097782 | Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least som... | 08/29/2006 |
| 7056806 | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure.... | 06/06/2006 |
| 7001843 | Methods of forming metal lines in semiconductor devices Methods for forming metal lines in semiconductor devices are disclosed. One example method may include forming a lower adhesive layer on a semiconductor substrate; forming a metal layer including aluminum on the lower adhesive layer; forming an anti-reflection layer... | 02/21/2006 |
| 6900138 | Oxygen plasma treatment for nitride surface to reduce photo footing The present invention includes a method for preventing distortion in semiconductor fabrication. The method comprises providing a substrate comprising a film comprising silicon nitride. The substrate is treated in a vacuum of about 3.0-6.5 Torr in an atmosphere compr... | 05/31/2005 |
| 6884318 | Plasma processing system and surface processing method A plasma processing system in which air in a plasma processing chamber is exhausted by an exhaust unit and a microwave is supplied to the plasma processing chamber through an annular waveguide which is provided at predetermined intervals in a circumferential directi... | 04/26/2005 |
| 6860275 | Post etching treatment process for high density oxide etcher A three-step polymer removal process that reverses the conventional sequence in which polymer is removed. In the preferred embodiment of the present invention the polymer is first removed from the Gas Deposition Table, after this the polymer is stripped from the inn... | 03/01/2005 |
| 6855621 | Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel... | 02/15/2005 |
| 6828251 | Method for improved plasma etching control A method for plasma etching is disclosed with improved etching selectivity for a nitride containing DARC and a low-k dielectric layer. Plasma chemistry is controlled by adjusting a nitrogen to oxygen ratio to achieve improved etching selectivity in both nitride cont... | 12/07/2004 |
| 6806228 | Low temperature synthesis of semiconductor fibers A method of synthesizing semiconductor fibers by placement of gallium or indium metal on a desired substrate, placing the combination in a low pressure chamber at a vacuum from 100 mTorr to one atmosphere pressure in an atmosphere containing desired gaseous reactant... | 10/19/2004 |
| 6790784 | Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure A process for forming an integrated circuit structure comprises forming a layer of low k dielectric material over a previously formed integrated circuit structure, and treating the upper surface of the layer of low k dielectric material with a plasma to form a layer... | 09/14/2004 |
| 6713969 | Method and apparatus for determination and control of plasma state A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma ... | 03/30/2004 |
| 6706334 | Processing method and apparatus for removing oxide film Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the su... | 03/16/2004 |
| 6673722 | Microwave enhanced CVD system under magnetic field An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonanc... | 01/06/2004 |
| 6660624 | Method for reducing fluorine induced defects on a bonding pad surface A method for reducing a fluorine contamination level on a semiconductor wafer process surface including providing a semiconductor wafer surface having a process surface including an uppermost polyimide containing layer; reactive ion etching the process su... | 12/09/2003 |
| 6660647 | Method for processing surface of sample A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the st... | 12/09/2003 |
| 6656850 | Method for in-situ removal of side walls in MOM capacitor formation A method for fabricating an MOM capacitor (10) includes forming a first conductive layer (18) on an insulating support (12, 14), depositing a dielectric film (20) on the conductive layer, and patterning the dielectric film to define the capacitor feature.... | 12/02/2003 |
| 6647994 | Method of resist stripping over low-k dielectric material An improved and new process for photoresist stripping for use during fabrication of semiconductor integrated circuits, which use porous low-k dielectric materials, such as OSG or HSQ, as the interlevel and intra-level insulating layers, has been developed... | 11/18/2003 |
| 6596645 | Method for manufacturing a semiconductor memory device A method is provided for manufacturing a semiconductor memory device, particularly ferroelectric devices, in which an interlayer dielectric (ILD) layer formed on an upper part of a semiconductor substrate containing a capacitor structure is etched under c... | 07/22/2003 |
| 6541385 | Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning A method of forming an electrode in an integrated circuit includes preparing a silicon-base substrate, including forming semiconductor structures on the substrate to form an integrated substrate structure; depositing a layer of electrode material on a sub... | 04/01/2003 |
| 6527968 | Two-stage self-cleaning silicon etch process A process for etching a substrate 25 in an etching chamber 105, and simultaneously removing etch residue deposited on the surfaces of the walls 110 and components of the etching chamber 105. In one version, a two-stage method of opening a nitride mask lay... | 03/04/2003 |
| 6507626 | Bandpass phase tracker that automatically samples at prescribed carrier phases when digitizing VSB I-F signal A bandpass phase tracker automatically samples at prescribed carrier phases when digitizing a vestigial-sideband intermediate-frequency signal, which VSB I-F signal is modulated in accordance with a baseband symbol code of a prescribed symbol frequency. H... | 01/14/2003 |
| 6471821 | Plasma reactor and method A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles includin... | 10/29/2002 |
| 6461972 | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the wafer. A first gas flows through a microwave plasma generation... | 10/08/2002 |
| 6440867 | Metal gate with PVD amorphous silicon and silicide for CMOS devices and method of making the same with a replacement gate process A semiconductor structure and method for making the same provides a metal gate on a silicon substrate. The gate includes a high dielectric constant on the substrate, and a physical vapor deposited (PVD) layer of amorphous silicon on the high k gate dielec... | 08/27/2002 |
| 6417080 | Method of processing residue of ion implanted photoresist, and method of producing semiconductor device In order to carry out ashing at a high efficiency without leaving any residue and also to inhibit corrosion of an underlying material of a resist and further to prevent particle contamination, a photoresist is ashed at a low temperature to be removed and ... | 07/09/2002 |
| 6387752 | Semiconductor memory device and method of fabricating the same There is provided a method of fabricating a semiconductor memory device including a memory cell having transistor and a capacitor, and a cylindrical accumulation electrode, the method including the steps of (a) forming a first insulating film on a lower i... | 05/14/2002 |
| 6361707 | Apparatus and methods for upgraded substrate processing system with microwave plasma source An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the pre... | 03/26/2002 |
| 6333269 | Plasma treatment system and method It is an object to enhance the degree of freedom for the shape of an obtained magnetic field to enhance the inplane uniformity of thickness of first and second films when the first and second films are continuously formed on a substrate to be treated. A m... | 12/25/2001 |
| 6316369 | Corrosion-resistant system and method for a plasma etching apparatus A corrosion-resistant system and method for a plasma etching apparatus are provided which are capable of reducing a corrosion or erosion phenomenon of a discharge tube, equipment and/or elements in a chamber of the plasma etching apparatus which is used f... | 11/13/2001 |
| 6287980 | Plasma processing method and plasma processing apparatus A plasma processing apparatus mainly comprises a processing chamber (10) formed by a vacuum vessel, a magnetic field forming coil (80) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (101) supplying variou... | 09/11/2001 |
| 6255222 | Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus duri... | 07/03/2001 |
| 6242361 | Plasma treatment to improve DUV photoresist process A process for removing all amino groups adsorbed on a surface is described. The key feature of the invention is exposure of a layer, particularly an anti-reflection coating that has been deposited by means of PECVD, to a high-density plasma of either argo... | 06/05/2001 |
