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| Number | Title | Issue Date |
| 8163654 | Method for fabricating fine pattern in semiconductor device A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist over a substrate where an etch target layer is formed, doping at least one impurity selected from group III elements and group V elements, of the periodic table, i... | 04/24/2012 |
| 8158528 | Method for forming pattern of semiconductor device A method for forming a pattern of a semiconductor device comprises: forming a stacked film including an underlying layer, an antireflection film and a photoresist film over a semiconductor substrate; coating an over-coating composition over the photoresist film to f... | 04/17/2012 |
| 8153529 | Method for selective deposition and devices A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid hav... | 04/10/2012 |
| 8133819 | Plasma etching carbonaceous layers with sulfur-based etchants Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O2) and a gas including a carbon sulfur terminal ligand. A high RF frequency source is employed in certain embodiments to achieve a high etch rate with high selectivity... | 03/13/2012 |
| 8114782 | Method for etching organic hardmasks A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectr... | 02/14/2012 |
| 8105954 | System and method of vapor deposition Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical compone... | 01/31/2012 |
| 8093157 | Advanced processing technique and system for preserving tungsten in a device structure Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the w... | 01/10/2012 |
| 8071486 | Method for removing residues formed during the manufacture of MEMS devices A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for a period of time sufficient to dissolve the residues in the dry water ... | 12/06/2011 |
| 8030217 | Simplified pitch doubling process flow A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process... | 10/04/2011 |
| 8012880 | Method of manufacturing semiconductor device The present invention relates to a method of manufacturing a semiconductor device using a substrate including an organic low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen, with a resist pattern being formed on an upper layer side... | 09/06/2011 |
| 7998875 | Vapor phase repair and pore sealing of low-K dielectric materials A method of treating a nanoporous low-k dielectric material formed on a semiconductor substrate is provided. The low-k dielectric material has etched openings with an etch damaged region containing silanol groups on exterior surfaces of the etched openings and on in... | 08/16/2011 |
| 7998873 | Method for fabricating low-k dielectric and Cu interconnect A system and method for improving the performance of an integrated circuit by lowering RC delay time is provided. A preferred embodiment comprises adding a reactive etch gas to the ash/flush plasma process following a low-k dielectric etch. The illustrative embodime... | 08/16/2011 |
| 7998874 | Method for forming hard mask patterns having a fine pitch and method for forming a semiconductor device using the same A method for forming hard mask patterns includes, sequentially forming first, second, and third hard mask layers formed of materials having different etching selectivities on a substrate, forming first sacrificial patterns having a first pitch therebetween on the th... | 08/16/2011 |
| 7989354 | Patterning method Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on th... | 08/02/2011 |
| 7960288 | Photoresist trimming process A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthenin... | 06/14/2011 |
| 7955988 | Photoresist trimming process A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthenin... | 06/07/2011 |
| 7951723 | Integrated etch and supercritical COprocess and chamber design A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photor... | 05/31/2011 |
| 7939453 | Method for manufacturing organic transistor and organic transistor A method of producing an organic transistor which can form directly an organic semiconductor layer in pattern by simple processes and can produce an organic transistor excellent in transistor characteristics. The method includes: forming a hydrophobic/hydrophilic pa... | 05/10/2011 |
| 7867913 | Method for fabricating fine pattern in semiconductor device A method for fabricating a fine pattern in a semiconductor device includes forming a first photoresist over a substrate where an etch target layer is formed, doping at least one impurity selected from group III elements and group V elements, of the periodic table, i... | 01/11/2011 |
| 7842619 | Plasma processing method A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposi... | 11/30/2010 |
| 7816273 | Technique for removing resist material after high dose implantation in a semiconductor device Resist masks exposed to high-dose implantation processes may be efficiently removed on the basis of a combination of a plasma-based etch process and a wet chemical etch recipe, wherein both etch steps may include a highly selective etch chemistry in order to minimiz... | 10/19/2010 |
| 7811942 | Tri-layer plasma etch resist rework Exemplary embodiments provide a tri-layer resist (TLR) stack used in a photolithographic process, and methods for resist reworking by a single plasma etch process. The single plasma etch process can be used to remove one or more portions/layers of the TLR stack that... | 10/12/2010 |
| 7803715 | Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask Multi-layered carbon-based hardmask and method to form the same. The multi-layered carbon-based hardmask includes at least top and bottom carbon-based hardmask layers having different refractive indexes. The top and bottom carbon-based hardmask layer thicknesses and... | 09/28/2010 |
| 7767586 | Methods for forming connective elements on integrated circuits for packaging applications Methods for forming connective elements on integrated circuits for packaging applications are provided herein. In some embodiments, a method of forming connective elements on an integrated circuit for flipchip packaging may include providing a resist layer on the in... | 08/03/2010 |
| 7754617 | Polysilicon deposition and anneal process enabling thick polysilicon films for MEMS applications A method of forming a thick polysilicon layer for a MEMS inertial sensor includes forming a first amorphous polysilicon film on a substrate in an elevated temperature environment for a period of time such that a portion of the amorphous polysilicon film undergoes cr... | 07/13/2010 |
| 7749915 | Protection of polymer surfaces during micro-fabrication A method of protecting a polymeric layer from contamination by a photoresist layer. The method includes: (a) forming a polymeric layer over a substrate; (b) forming a non-photoactive protection layer over the polymeric layer; (c) forming a photoresist layer over the... | 07/06/2010 |
| 7732343 | Simplified pitch doubling process flow A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process... | 06/08/2010 |
| 7718542 | Low-k damage avoidance during bevel etch processing A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H | 05/18/2010 |
| 7718541 | Method of processing resist, semiconductor device, and method of producing the same A surface component film (2) is etched using a resist (3) as a mask, and the surface component film (2) is patterned according to the shape of an aperture (3a). This results in a step portion (4) having the same shape as the... | 05/18/2010 |
| 7718543 | Two step etching of a bottom anti-reflective coating layer in dual damascene application Methods for removing a BARC layer from a feature are provided in the present invention. In one embodiment, the method includes providing a substrate having a feature filled with a BARC layer in an etching chamber, supplying a first gas mixture comprising NH3 | 05/18/2010 |
| 7700494 | Low-pressure removal of photoresist and etch residue A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low ... | 04/20/2010 |
| 7687406 | Methods of eliminating pattern collapse on photoresist patterns A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is app... | 03/30/2010 |
| 7662723 | Methods and apparatus for in-situ substrate processing A plasma processing system for processing a substrate is disclosed. The plasma processing system includes a gas distribution system. The plasma processing system also includes a gas flow control assembly coupled to the gas distribution system and configured to contr... | 02/16/2010 |
| 7651950 | Method for forming a pattern of a semiconductor device In a method for forming a fine pattern of a semiconductor device, forming a spacer for double patterning of a cell region is performed separate from forming a mask pattern that defines a dummy pattern for a pad of a peripheral circuit region. ... | 01/26/2010 |
| 7651949 | Method of manufacturing a semiconductor device A semiconductor device may be manufactured by employing an ashing process for removing a photoresist in a process chamber, wherein the ashing process comprises: removing the photoresist for a first predetermined process time by flowing one or more oxygen and nitroge... | 01/26/2010 |
| 7642195 | Hydrogen treatment to improve photoresist adhesion and rework consistency A process for selectively removing photoresist, organic overlayers, and/or polymers/residues from a substrate without altering the surface chemistry and adhesion properties of the underlying substrate layers is provided. Generally, the process includes pretreating t... | 01/05/2010 |
| 7585780 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device comprises: forming an interlayer insulating film including a storage node contact plug over a semiconductor substrate; forming an etching barrier film, a sacrificial insulating film, and a hard mask film over the sto... | 09/08/2009 |
| 7553774 | Method of fabricating semiconductor optical device In a method of fabricating a semiconductor optical device, insulating structures for an alignment mark for use in electron beam exposure are formed on a primary surface of a first group III-V semiconductor region. After forming the insulating structures, a second gr... | 06/30/2009 |
| 7550392 | Semiconductor device and method of manufacturing the same A semiconductor device manufacturing method, includes a step of forming a first alumina film (underlying insulating film) 37 on a semiconductor substrate 20, a step of forming a first conductive film 41, a ferroelectric film 42, and a sec... | 06/23/2009 |
| 7517805 | Method of in-situ ash strip to eliminate memory effect and reduce wafer damage An in-situ ashing method for stripping a photoresist layer following a fluorocarbon based etch that transfers a pattern through a dielectric layer is disclosed. The method is especially effective in removing fluoropolymer residues from substrates with minimal damage... | 04/14/2009 |
