Class 438/721 - Silicide

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the material undergoing etching with the
No. of patents: 194
Last issue date: 05/10/2011

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Number	Title	Issue Date
7939452	Method of manufacturing transistor having metal silicide and method of manufacturing a semiconductor device using the same In a method of manufacturing a transistor and a method of manufacturing a semiconductor device using the same, the method may include forming a preliminary metal silicide pattern on a single-crystalline silicon substrate and on a polysilicon pattern, and partially e...	05/10/2011
7648917	Manufacturing method of solid-state imaging device A manufacturing method of a solid-state imaging device includes: forming a first and second insulating films having different properties on a silicon substrate such that they cover sides of gate electrodes formed on the silicon substrate; subjecting the second insul...	01/19/2010
7425482	Non-volatile memory device and method for fabricating the same A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate; forming a first insulation layer c...	09/16/2008
7396764	Manufacturing method for forming all regions of the gate electrode silicided The technology which can improve the performance of a MOS transistor in which all the regions of the gate electrode were silicided is offered. A gate insulating film and a gate electrode of an nMOS transistor are laminated and formed in this order on a semico...	07/08/2008
7371333	Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines The invention includes methods of etching nickel silicide and cobalt silicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel silicide is exposed to a fluid comprising H3PO4 and H2O at a...	05/13/2008
7370306	Method and apparatus for designing a pattern on a semiconductor surface A method of forming a pattern of elements is shown. In one embodiment, the method is used to create a reticle. In another embodiment, the method is used to further form a number of elements on a surface of a semiconductor wafer. Identified problem structures or regi...	05/06/2008
7348230	Manufacturing method of semiconductor device A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source...	03/25/2008
7344985	Nickel alloy silicide including indium and a method of manufacture therefor The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate ...	03/18/2008
7323418	Etch-back process for capping a polymer memory device The present invention leverages an etch-back process to provide an electrode cap for a polymer memory element. This allows the polymer memory element to be formed within a via embedded in layers formed on a substrate. By utilizing the etch-back process, the present ...	01/29/2008
7309655	Etching method in a semiconductor processing and etching system for performing the same Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching ...	12/18/2007
7300829	Low temperature process for TFT fabrication Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subject...	11/27/2007
7297638	Method for manufacturing a semiconductor device A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the ox...	11/20/2007
7268065	Methods of manufacturing metal-silicide features A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the se...	09/11/2007
7244642	Method to obtain fully silicided gate electrodes The present invention provides a method of fabricating a microelectronics device. In one aspect, the method comprises depositing a protective layer (510) over a spacer material (415) located over gate electrodes (250) and a doped region (255	07/17/2007
7217652	Method of forming highly conductive semiconductor structures via plasma etch A process for making semiconductor structures uses a decoupled plasma source to produce a highly selective plasma etchant to form a structure with a thin adhesive layer and overlaying conductive layer. The preferred plasma is formed from chlorine and oxygen feed gas...	05/15/2007
7214621	Methods of forming devices associated with semiconductor constructions The invention includes methods of forming devices associated with semiconductor constructions. In exemplary methods, common processing steps are utilized to form fully silicided recessed array access gates and partially silicided periphery transistor gates. ...	05/08/2007
7211517	Semiconductor device and method that includes reverse tapering multiple layers A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film 14, a first conductive layer 15 and a first insulating film 16 on a semiconductor layer 13 provided on an i...	05/01/2007
7211516	Nickel silicide including indium and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nicke...	05/01/2007
7208409	Integrated circuit metal silicide method Fluorine containing regions (70) are formed in the source and drain regions (60) of the MOS transistor. A metal layer (90) is formed over the fluorine containing regions (70) and the source and drain regions (60). The metal layer i...	04/24/2007
7208805	Structures comprising a layer free of nitrogen between silicon nitride and photoresist The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first ma...	04/24/2007
7192532	Dry etching method A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF...	03/20/2007
7186661	Method to improve profile control and N/P loading in dual doped gate applications A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unpr...	03/06/2007
7183221	Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer Fabricating a semiconductor includes depositing a metal layer outwardly from a dielectric layer and forming a mask layer outwardly from a first portion of the metal layer. Atoms are incorporated into an exposed second portion of the metal layer to form a composition...	02/27/2007
7179707	Method of forming gate electrode in semiconductor device A method for forming a gate electrode in the semiconductor device is disclosed. The disclosed methods for forming a gate electrode in a semiconductor includes forming a polysilicon film and a metal silicide film sequentially on an upper portion of a semiconductor su...	02/20/2007
7176139	Etching method in a semiconductor processing and etching system for performing the same Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching ...	02/13/2007
7163879	Hard mask etch for gate polyetch A transistor gate structure that is free from notches is formed by using a hard mask. The hard mask has a bilayer structure of a BARC (bottom antireflective coating) over a silicon dioxide layer. A photoresist layer is formed over a portion corresponding to the gate...	01/16/2007
7148143	Semiconductor device having a fully silicided gate electrode and method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) loca...	12/12/2006
7129169	Method for controlling voiding and bridging in silicide formation A method for forming a metal silicide contact for a semiconductor device includes forming a refractory metal layer over a substrate, including active and non-active area of said substrate, and forming a cap layer over the refractory metal layer. A counter tensile la...	10/31/2006
7122477	Method of plasma treatment The present invention is a plasma processing method including: a step of introducing a substrate into a processing container, a metal or metallic compound film being formed on a surface of the substrate; a step of supplying a noble gas and an H2 gas into ...	10/17/2006
7115523	Method and apparatus for etching photomasks A process is provided for etching a silicon based material in a substrate, such as a photomask, to form features with straight sidewalls, flat bottoms, and high profile angles between the sidewalls and bottom, and minimizing the formation of polymer deposits on the ...	10/03/2006
7112535	Precision polysilicon resistor process A process is disclosed for fabricating precision polysilicon resistors which more precisely control the tolerance of the sheet resistivity of the produced polysilicon resistors. The process generally includes performing an emitter/FET activation rapid thermal anneal...	09/26/2006
7084066	Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a plurality of layers. At least one of the layers comprises a refractory me...	08/01/2006
7078342	Method of forming a gate stack A method for forming a gate stack which minimizes or eliminates damage to the gate dielectric layer and/or silicon substrate during the gate stack formation by the reduction of the temperature during formation. The temperature reduction prevents the formation of sil...	07/18/2006
7071114	Method and apparatus for dry etching A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditi...	07/04/2006
7067391	Method to form a metal silicide gate device A new method to form metal silicide gates in the fabrication of an integrated circuit device is achieved. The method comprises forming polysilicon lines overlying a substrate with a dielectric layer therebetween. A first isolation layer is formed overlying the subst...	06/27/2006
7067417	Methods of removing resistive remnants from contact holes using silicidation A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath...	06/27/2006
7041601	Method of manufacturing metal gate MOSFET with strained channel A method of manufacturing a MOSFET type semiconductor device includes forming a fin structure and a dummy gate structure over the fin structure. Sidewall spacers may be formed adjacent the dummy gate structure. The dummy gate structure may be later removed and repla...	05/09/2006
7041548	Methods of forming a gate stack that is void of silicon clusters within a metallic silicide film thereof A method for forming a gate stack which minimizes or eliminates damage to the gate dielectric layer and/or silicon substrate during the gate stack formation by the reduction of the temperature during formation. The temperature reduction prevents the formation of sil...	05/09/2006
7022618	Method of forming a conductive contact In one implementation, an etching process includes forming a carbon containing material over a substrate and plasma etching at a temperature of at least 400° C. using a hydrogen or oxygen containing plasma. In one implementation, a plasma etching process includes f...	04/04/2006
7005387	Method for preventing an increase in contact hole width during contact formation According to one exemplary embodiment, a method for forming a contact over a silicide layer situated in a semiconductor die comprises a step of depositing a barrier layer on sidewalls of a contact hole and on a native oxide layer situated at a bottom of the contact ...	02/28/2006

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Class 438/721 - Silicide