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| Number | Title | Issue Date |
| 8187909 | Backside illuminated image sensor having deep light reflective trenches An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosens... | 05/29/2012 |
| 8183081 | Hybrid heterojunction solar cell fabrication using a metal layer mask Embodiments of the invention generally provide a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming one or more layers on a backside of a solar cell substrate prior to the texturin... | 05/22/2012 |
| 8163591 | Backside illuminated image sensor A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the... | 04/24/2012 |
| 8148191 | Combined etching and doping media The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. The present invention secondly also relates to a process in which these media... | 04/03/2012 |
| 8133754 | Image sensor and method for manufacturing the same An image sensor is disclosed that includes a first substrate including an electric junction region, a transistor, and a metal line connected to the electric junction region or the transistor; and a photodiode formed on the first substrate. The first substrate is for... | 03/13/2012 |
| 8129213 | Solid-state imaging device and method for manufacturing the same Disclosed herein is a solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or und... | 03/06/2012 |
| 8119440 | Method and apparatus providing refractive index structure for a device capturing or displaying images A transient index stack having an intermediate transient index layer, for use in an imaging device or a display device, that reduces reflection between layers having different refractive indexes by making a gradual transition from one refractive index to another. Ot... | 02/21/2012 |
| 8119439 | Methods of manufacturing an image sensor having an air gap In an example embodiment, the method of manufacturing an image sensor includes forming an interlayer dielectric (ILD) on a substrate. The substrate may have a plurality of pixels arranged thereon and each of the pixels includes a photoelectric conversion device conf... | 02/21/2012 |
| 8043883 | Method for manufacturing solid-state imaging device having improved sensitivity and reduced flare Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units ... | 10/25/2011 |
| 8039289 | Diffusion furnaces employing ultra low mass transport systems and methods of wafer rapid diffusion processing Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling zone(s). The transport of solar cell wafers, e.g., silicon, selenium, ger... | 10/18/2011 |
| 8021909 | Method for making a planar concentrating solar cell assembly with silicon quantum dots Disclosed is a method for making a silicon quantum dot planar concentrating solar cell. At first, silicon nitride or silicon oxide mixed with silicon quantum dots is provided on a transparent substrate. By piling, there is formed a planar optical waveguide for conce... | 09/20/2011 |
| 8017428 | Process of forming a silicon solar cell A process for the production of a silicon solar cell comprising application and firing of an aluminum paste which comprises magnesium oxide and/or magnesium compounds capable of forming magnesium oxide on firing on the back-side of a silicon wafer provided with a si... | 09/13/2011 |
| 8017427 | Backside-illuminated (BSI) image sensor with backside diffusion doping Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments o... | 09/13/2011 |
| 7977144 | Thin film transistor array panel and manufacture thereof A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating l... | 07/12/2011 |
| 7972891 | Image sensor and method for manufacturing the same An image sensor and a method for manufacturing the same that includes photodiodes formed in a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, the first insulating layer including a seed pattern corresponding spatially to th... | 07/05/2011 |
| 7968367 | Fabricating method of thin film transistor array substrate A fabricating method of a TFT array substrate includes following steps: providing a substrate having a pixel region and a bonding pad region surrounding the pixel region; forming a patterned polysilicon layer within the pixel region on the substrate; forming a first... | 06/28/2011 |
| 7964433 | Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device furth... | 06/21/2011 |
| 7939362 | Image sensor and method of fabricating the same An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, ther... | 05/10/2011 |
| 7935563 | Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover a... | 05/03/2011 |
| 7935562 | Method for annealing photovoltaic cells Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection lay... | 05/03/2011 |
| 7927910 | Manufacturing method of solar cell The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion effi... | 04/19/2011 |
| 7888162 | Method of manufacturing a photoelectronic device This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating th... | 02/15/2011 |
| 7888161 | Solid-state imaging device and method for producing the same A method for producing a solid-state imaging device, which including: a photoelectric conversion section; a charge transfer section having a charge transfer electrode; and an antireflection film covering a light-receiving region in the photoelectric conversion secti... | 02/15/2011 |
| 7888160 | Process of manufacturing solar cell A process of manufacturing a solar cell is disclosed. The process comprises steps of (a) providing a semiconductor substrate, (b) forming a dielectric layer with amorphous silicon structure on the semiconductor substrate, (c) partially removing the dielectric layer ... | 02/15/2011 |
| 7875489 | CMOS image sensor and fabricating method thereof A CMOS image sensor and a fabricating method for a semiconductor device are disclosed. Embodiments provide a CMOS image sensor having an improved structure using a light reflection system, with a fabricating method thereof to simplify the fabrication process and max... | 01/25/2011 |
| 7867809 | One-step diffusion method for fabricating a differential doped solar cell A one-step diffusion method for fabricating a differential doped solar cell is described. The one-step diffusion method includes the following step. First, a substrate is provided. A doping control layer is formed on the substrate. The doping control layer includes ... | 01/11/2011 |
| 7863079 | Methods of reducing CD loss in a microelectromechanical device Methods of fabricating an electromechanical systems device that minimize critical dimension (CD) loss in the device are described. The methods provide electromechanical systems devices with improved properties, including high reflectivity. ... | 01/04/2011 |
| 7863078 | Method for making an anti-reflection film of a solar cell A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a pâ... | 01/04/2011 |
| 7858430 | Method for making a photovoltaic cell comprising contact regions doped through a lamina In aspects of the present invention, a method is disclosed to form a lamina having opposing first and second surfaces. Heavily doped contact regions extend from the first surface to the second surface. Generally the lamina is formed by affixing a semiconductor donor... | 12/28/2010 |
| 7718463 | Display device and manufacturing method thereof A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a la... | 05/18/2010 |
| 7659135 | Semiconductor device fabrication method and semiconductor device A semiconductor device fabrication method in which when a semiconductor device with a built-in light receiving element is fabricated, a section for dividing the light receiving element is protected from damage caused by, for example, etching. An antireflection coati... | 02/09/2010 |
| 7655496 | Metal lift-off systems and methods using liquid solvent and frozen gas A method of fabricating a semiconductor device includes patterning a layer of photoresist onto a surface of a wafer to define metal feature areas and residual metal areas. A layer of metal is deposited over the patterned layer of photoresist, the metal layer include... | 02/02/2010 |
| 7629197 | Spatial light modulator An interferometric spatial light modulator comprises of two cavities. One is the optical resonant cavity having a partially reflective film and a movable reflective membrane as two walls, and the other is the electromechanical actuation cavity having the movable ref... | 12/08/2009 |
| 7592198 | Method for making a photovoltaic cell based on thin-film silicon The invention concerns a method for making a photovoltaic cell based on thin film silicon, which consists in providing a heterojunction by depositing on a support at least one first P— (or N—) doped amorphous silicon layer (13) and a second N— (or P—)... | 09/22/2009 |
| 7556981 | Switches for shorting during MEMS etch release A MEMS (Microelectromechanical system) device is described. The device includes a first layer on a substrate, and a sacrificial layer on or over the first layer, the first sacrificial layer being configured to be removed in a removal procedure. The device also inclu... | 07/07/2009 |
| 7521280 | Method for forming an optical image sensor with an integrated metal-gate reflector A method according to one embodiment includes forming a photosensitive region on an substrate; forming at least one dielectric layer upon the photosensitive region; simultaneously forming and patterning a metal layer upon the photosensitive region; wherein a first p... | 04/21/2009 |
| 7488618 | Microlenses including a plurality of mutually adhered layers of optically transmissive material and systems including the same Microlenses for directing radiation toward a sensor of an imaging device include a plurality of mutually adhered layers of cured optically transmissive material. Systems include at least one microprocessor and a substrate including an array of microlenses formed the... | 02/10/2009 |
| 7435615 | Method for fabricating CMOS image sensor A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at le... | 10/14/2008 |
| 7416834 | Antireflective coating compositions The present invention relates to a spin-on antireflective coating composition for a photoresist comprising a polymer, a crosslinking compound and a thermal acid generator, where the polymer comprises at least one functional moiety capable of increasing the refractiv... | 08/26/2008 |
| 7413923 | Method of manufacturing CMOS image sensor Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is ... | 08/19/2008 |
