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| Number | Title | Issue Date |
| 4988644 | Method for etching semiconductor materials using a remote plasma generator An apparatus and a method for the etching of semiconductor materials is disclosed. The apparatus includes a process chamber which includes a plasma generator remote from and in fluid communication with the process chamber. The remote plasma generator incl... | 01/29/1991 |
| 4960488 | Reactor chamber self-cleaning process A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in whic... | 10/02/1990 |
| 4918031 | Processes depending on plasma generation using a helical resonator Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with resulting rapid anisotropic etching. A helical resonator in c... | 04/17/1990 |
| 4916082 | Method of preventing dielectric degradation or rupture Charge on a floating gate of a semiconductor device structure is neutralized by illuminating the structure with a high intensity light during process steps that inject charge. The light provides for the formation of electrons, or free carriers, in the sem... | 04/10/1990 |
| 4897154 | Post dry-etch cleaning method for restoring wafer properties A post dry etching process for restoring wafers damaged by dry etching such as RIE, comprising the steps of removing any dry etch residue layer from the etched portions of the wafer and forming an oxide on those etched portions; rapid thermal annealing th... | 01/30/1990 |
| 4871421 | Split-phase driver for plasma etch system A plasma etching system includes a radio frequency generator and a parallel plate plasma reactor vessel. A phase inverter circuit is used to couple the RF generator to the electrodes in the plasma reactor so that the electrodes are driven with voltages of... | 10/03/1989 |
| 4855016 | Method for etching aluminum film doped with copper A process for etch of Copper doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of BCl3, Cl2, and a source of hydrocarbons with... | 08/08/1989 |
| 4808682 | Copolymers having o-nitrocarbinol ester groups, production of two-layer resists, and fabrication of semiconductor components Copolymers useful in particular for producing two-layer resists and fabricating semiconductor devices contain from 5 to 50 mol % of monomers having o-nitrocarbinol ester groups, from 95 to 50 mol % of an olefinically unsaturated silicon-containing organic... | 02/28/1989 |
| 4808258 | Plasma processing method and apparatus for carrying out the same A plasma processing method and an apparatus for carrying out the method in which a processing gas is introduced into a processing chamber, and periodically an amplitude modulated or frequency-modulated high-frequency voltage is applied to plasma generatin... | 02/28/1989 |
| 4786359 | Xenon enhanced plasma etch A plasma etch process and apparatus is disclosed in which a gas mixture comprises CF3 Br, xenon or krypton, and oxygen. The plasma reactor includes a sacrificial element, preferably in the form of a graphite ring, on the lower electrode of a pa... | 11/22/1988 |
| 4734158 | Molecular beam etching system and method A particle beam etching system and method are disclosed in which ion and substantially ion-free chemical radical beams are generated separately and directed onto the same portion of a semiconductor wafer to be etched, preferably perpendicular to the wafer... | 03/29/1988 |
| 4718976 | Process and apparatus for plasma treatment A process and apparatus for plasma treatment by the use of a plasma generating chamber and a separate treating chamber in which an activated gas, excited in the plasma generating chamber, is introduced into the treating chamber, distributed within the tre... | 01/12/1988 |
| 4675273 | Resists formed by vapor deposition of anionically polymerizable monomer A method for applying a polymeric resist coating of very high molecular weight to a suitable substrate without the necessity of elaborate purification steps and for ensuring adequate coverage of raised regions in three-dimensionally patterned substrates. ... | 06/23/1987 |
| 4675073 | Tin etch process A plasma etch process for etching titanium nitride selectively with respect to titanium silicides. A reducing electrode, a low flow rate, and a non-copious fluorine source (such as CF4) are used to achieve a fluorine-deficient plasma. Preferabl... | 06/23/1987 |
| 4664747 | Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same In a surface processing apparatus, the LTE (Local Thermal Equilibrium) plasma is produced, instead of the glow discharge, in the discharge chamber. Then the LTE plasma is conducted into the reaction chamber. The surface of the substrate positioned in the ... | 05/12/1987 |
| 4647338 | Method of manufacturing a semiconductor device, in which a semiconductor substrate is subjected to a treatment in a reaction gas A method of manufacturing a semiconductor device, in which a semiconductor substrate (1) is subjected to a surface treatment in a reactor vessel (2), through which a current (3) of a reaction gas is passed and is then pumped away by means of a mechanical ... | 03/03/1987 |
| 4602981 | Monitoring technique for plasma etching Plasma potential monitoring during a plasma etching process is accomplished by measuring the RF voltage at an electrode of, for example, a high pressure, high plasma density, symmetric single wafer reactor. The plasma potential is indicative of the plasma... | 07/29/1986 |
| 4585668 | Method for treating a surface with a microwave or UHF plasma and improved apparatus A method for etching or chemically treating a surface of an article utilizing a radio frequency wave ion generating apparatus which provides a thin disk shaped plasma is described. The plasma disks can have a relatively large diameter (on the order of mag... | 04/29/1986 |
| 4555303 | Oxidation of material in high pressure oxygen plasma A process is disclosed for removing carbonaceous material from a surface in a high pressure oxygen plasma. A surface, such as a surface of a silicon ribbon, having a layer of carbonaceous material thereon is positioned in a high pressure plasma reaction v... | 11/26/1985 |
| 4554047 | Downstream apparatus and technique The use of a particular configuration in a downstream etching apparatus and technique allows the rapid and economical treatment of a plurality of semiconductor substrates. Additionally, through the use of this technique, global and localized loading effec... | 11/19/1985 |
| 4500563 | Independently variably controlled pulsed R.F. plasma chemical vapor processing Semiconductive wafers are processed, i.e., etched or layers deposited thereon, by means of a plasma enhanced chemical vapor processing system wherein the plasma is generated by a train of R.F. power pulses. The pulse repetition rate, pulse length and peak... | 02/19/1985 |
| 4400235 | Etching apparatus and method In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the waf... | 08/23/1983 |
| 4380489 | Method of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etching Polysilicon structures down to a 1 μm range on substrates containing integrated semiconductor circuits are produced by plasma etching in a plate reactor with the use of SF6 and an inert gas as the reactive gas. During this process, a semicondu... | 04/19/1983 |
| 4361461 | Hydrogen etching of semiconductors and oxides Atomic hydrogen, typically produced in a plasma, etches a wide range of materials, including III-V materials and their oxides. GaAs oxide is etched at a faster rate than GaAs, for example, providing significant possibilities for processing integrated circ... | 11/30/1982 |
| 4243475 | Method for etching a phosphorus-nitrogen-oxygen coating A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reac... | 01/06/1981 |
| 4226665 | Device fabrication by plasma etching Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect--the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etcha... | 10/07/1980 |
| 4209357 | Plasma reactor apparatus A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as ... | 06/24/1980 |
| 4176004 | Method for modifying the characteristics of a semiconductor fusions A method for etching semiconductor fusions to change their electrical characteristic, especially to reduce the firing current of thyristor fusions, to a predetermined desired value is disclosed. The etching is accomplished by subjecting fusions comprised of a ... | 11/27/1979 |
| 3971684 | Etching thin film circuits and semiconductor chips A method is provided for etching thin film circuits or semiconductor chips to produce well defined vertically etched walls at rapid etching rates. The substrates to be etched are covered by masks and positioned on a cathode electrode enclosed in a contain... | 07/27/1976 |
