Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 7341958 | Integrated process for thin film resistors with silicides The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a ... | 03/11/2008 |
| 7341673 | Methods and apparatus for in situ substrate temperature monitoring by electromagnetic radiation emission A method in a plasma processing system of determining the temperature of a substrate. The method includes providing a substrate comprising a set of materials, wherein the substrate being configured to absorb electromagnetic radiation comprising a first set of electr... | 03/11/2008 |
| 7341956 | Disposable hard mask for forming bit lines A method includes forming a group of disposable hard mask structures on a semiconductor device that includes a group of memory cells. The method further includes using the disposable hard mask structures to precisely control a junction profile of the memory cells. | 03/11/2008 |
| 7338897 | Method of fabricating a semiconductor device having metal wiring A method of fabricating a semiconductor device includes forming a metal wire on a substrate, forming an interlayer insulating film on the metal wire, forming a resist pattern on the interlayer insulating film, selectively etching the interlayer film to form a trench... | 03/04/2008 |
| 7338903 | Sequential reducing plasma and inert plasma pre-treatment method for oxidizable conductor layer A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer ma... | 03/04/2008 |
| 7339648 | Apparatus for manufacturing liquid crystal display device and liquid crystal display device manufactured using the same An apparatus for forming a thin film on a substrate includes a chamber having a gas inlet, an upper electrode in the chamber, the upper electrode having a plurality of nozzles, a lower electrode in the chamber for supporting the substrate thereon, the lower electrod... | 03/04/2008 |
| 7335600 | Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides suffic... | 02/26/2008 |
| 7335918 | Silicon nitride film and semiconductor device, and manufacturing method thereof An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain ... | 02/26/2008 |
| 7335589 | Method of forming contact via through multiple layers of dielectric material In a manufacture of a semiconductor device, spacers are formed on sidewalls of structures including conductive patterns and insulation patterns. The insulation patterns are at least four times thinner than the conductive patterns. After gaps between the structures a... | 02/26/2008 |
| 7335602 | Charge-free layer by layer etching of dielectrics A method for etching a dielectric film is provided herein. In accordance with the method, a device (201) is provided which comprises a first chamber (203) equipped with a first gas supply (209) and a second chamber (205) equipped with a s... | 02/26/2008 |
| 7335588 | Interconnect structure and method of fabrication of same A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask... | 02/26/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7335268 | Inorganic compound for removing polymers in semiconductor processes An inorganic compound for removing polymers after a semiconductor etching process and related methods and apparatus are disclosed. An example compound includes DIW, H2SO4, H2O2 and HF. An example method for removing polyme... | 02/26/2008 |
| 7332262 | Photolithography scheme using a silicon containing resist A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes deve... | 02/19/2008 |
| 7331655 | Fluid coupler and a device arranged with the same Plural film layers are disposed on a substrate. Each film layer has regions devoid of film material, thus forming film layer cavity openings. Each film layer has its cavities arranged to provide fluid coupling with its adjacent film layer or layers. The film layer c... | 02/19/2008 |
| 7332422 | Method for CuO reduction by using two step nitrogen oxygen and reducing plasma treatment A method for cleaning a copper interconnect after a chemical-mechanical polishing that comprises: a) treating the surface of said copper interconnect with a nitrogen and oxygen containing treatment; and b) without breaking vacuum, treating the copper interconnect wi... | 02/19/2008 |
| 7329608 | Method of processing a substrate The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded,... | 02/12/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7326445 | Method and apparatus for manufacturing ultra fine three-dimensional structure A method is adopted for deposition technology using a focused ion beam device, characterized by enabling structures to be formed by using phenanthrene as a source gas and using ions of gallium or gold, silicon or beryllium etc. of energies of 5 to 100 keV from a liq... | 02/05/2008 |
| 7326650 | Method of etching dual damascene structure In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the dual damascene structure, is formed in at least one layer over the hard... | 02/05/2008 |
| 7326645 | Methods for forming copper interconnect of semiconductor devices Methods for forming a copper interconnect of a semiconductor device are disclosed. A disclosed method comprises forming a lower metal interconnect; sequentially depositing a capping layer, a first insulating layer, and a second insulating layer on the lower metal in... | 02/05/2008 |
| 7326657 | Post-deposition treatment to enhance properties of Si-O-C low k films A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally tak... | 02/05/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7323419 | Method of fabricating semiconductor device A method of fabricating a semiconductor device including a high-k dielectric for as a gate insulating layer is provided. The method includes forming a high-k dielectric layer and a conductive layer on a substrate, dry etching a portion of the conductive layer, perfo... | 01/29/2008 |
| 7320941 | Plasma stabilization method and plasma apparatus There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be ... | 01/22/2008 |
| RE40028 | Liquid crystal display device and method of manufacturing the same The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second photolithography process including: a) depositing sequentially a gate insulating la... | 01/22/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7317633 | Protection of NROM devices from charge damage A method for protecting NROM devices from charge damage during process steps, the method including providing X-decoder structure for word line connections, wherein each word line is connected to a pair of transistors, a PMOS transistor and an NMOS transistor the PMO... | 01/08/2008 |
| 7316785 | Methods and apparatus for the optimization of etch resistance in a plasma processing system In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixtu... | 01/08/2008 |
| 7316980 | Method for forming ferrocapacitors and FeRAM devices Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intac... | 01/08/2008 |
| 7317253 | Cobalt tungsten phosphate used to fill voids arising in a copper metallization process A semiconductor device includes a substrate, at least one layer of functional devices formed on the substrate, a first dielectric layer formed over the functional device layer and a first trench/via located in the first dielectric layer. A copper conductor fills the... | 01/08/2008 |
| 7314798 | Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming A method of making an array of storage cells includes a first source/drain region underlying a first trench defined in a semiconductor substrate and a second source/drain region underlying a second trench in the substrate. A charge storage stack lines each of the tr... | 01/01/2008 |
| 7315346 | Lithographic apparatus and device manufacturing method A lithographic projection apparatus is disclosed. The apparatus includes a support structure constructed to support a patterning structure. The patterning structure is adapted to pattern a beam of radiation according to a desired pattern. The apparatus also includes... | 01/01/2008 |
| 7314574 | Etching method and apparatus An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder ( | 01/01/2008 |
| 7311852 | Method of plasma etching low-k dielectric materials A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon reactant, a nitrogen reactant and an optional carrier gas, the fluoroca... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7311784 | Plasma processing device This invention relates to a plasma processing system. A common problem in the manufacture of semiconductors is the maintenance of a constant fluid flow throughout the chamber in which the semiconductors are being etched. The focus ring described herein helps control... | 12/25/2007 |
| 7312415 | Plasma method with high input power A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside... | 12/25/2007 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
| 7312156 | Method and apparatus for supporting a semiconductor wafer during processing A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas ... | 12/25/2007 |
