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An apparatus for the deployment of a visible plume to alert other motorists that a proximate motor vehicle has been involved in a collision.
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| Number | Title | Issue Date |
| 7611992 | Semiconductor light emitting element and method of manufacturing the same A semiconductor light emitting element including a conductive substrate, a bonding metal layer formed on the conductive substrate, a barrier layer formed on the bonding metal layer, a reflective layer formed on the barrier layer, an ohmic electrode layer formed on t... | 11/03/2009 |
| 7521366 | Manufacturing method of electro line for liquid crystal display device A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and d... | 04/21/2009 |
| 7507670 | Silicon electrode assembly surface decontamination by acidic solution Methods for cleaning silicon surfaces of electrode assemblies by efficiently removing contaminants from the silicon surfaces without discoloring the silicon surfaces using an acidic solution comprising hydrofluoric acid, nitric acid, acetic acid, and balance deioniz... | 03/24/2009 |
| 7476622 | Method of forming a contact in a semiconductor device A gate is formed on a device formation region of a semiconductor substrate, and source and drain regions are formed in the device formation region of the semiconductor substrate adjacent respective sides of the gate. The gate is formed to include a gate dielectric l... | 01/13/2009 |
| 7468323 | Method of forming high aspect ratio structures An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structur... | 12/23/2008 |
| 7459401 | Method of dividing wafer A method of dividing and separating a wafer having a plurality of devices formed on its front surface, which are separated by streets. The method includes applying a resist film coating to a portion of the back surface of the wafer other than an area corresponding t... | 12/02/2008 |
| 7452821 | Method for the formation of contact holes for a number of contact regions for components integrated in a substrate A method is disclosed by means of which contact holes (K1), (K2) and (K3), leading to integrated components can be produced with just one structuring mask, whereby contact holes (K1) and (K3) lead to contact regions (25e, | 11/18/2008 |
| 7452822 | Via plug formation in dual damascene process A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material... | 11/18/2008 |
| 7431855 | Apparatus and method for removing photoresist from a substrate An apparatus and method for removing photoresist from a substrate, which includes treating the photoresist with a first reactant to cause swelling, cracking or delamination of the photoresist, treating the photoresist with a second reactant to chemically alter the p... | 10/07/2008 |
| 7422020 | Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectric A porous dielectric layer is formed on a substrate. Aluminum is incorporated in the porous dielectric layer with a pattern process using an Aluminum gas precursor. The incorporated Aluminum improves the mechanical properties of the porous dielectric layer. ... | 09/09/2008 |
| 7419914 | Semiconductor device fabrication method A method for fabricating a semiconductor device with a borderless via/wiring structure includes the steps of performing borderless via etching using a resist mask to form a contact hole in an interlevel dielectric layer over a semiconductor substrate so as to expose... | 09/02/2008 |
| 7405139 | Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chi... | 07/29/2008 |
| 7402467 | Method of manufacturing a semiconductor device A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT... | 07/22/2008 |
| 7402523 | Etching method A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by app... | 07/22/2008 |
| 7396737 | Method of forming shallow trench isolation A method of manufacturing a semiconductor device including forming a pad oxide layer on a semiconductor substrate, forming a spacer oxide layer pattern on sidewalls of the pad oxide layer, and forming a nitride layer on the pad oxide layer. The method further includ... | 07/08/2008 |
| 7384799 | Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent str... | 06/10/2008 |
| 7364832 | Wet developable hard mask in conjunction with thin photoresist for micro photolithography A novel process for using a hard mask or protective layer in conjunction with an extremely thin photoresist is provided. In this process, a thin film of the protective layer is coated on the surface of a substrate that is to be selectively modified by reactive ion e... | 04/29/2008 |
| 7365021 | Methods of fabricating a semiconductor device using an organic compound and fluoride-based buffered solution Methods are provided for fabricating a semiconductor device that include the steps of: sequentially forming a metal interconnection and a protecting layer on a semiconductor substrate; forming a contact hole on the protecting layer; isolating the contact hole by for... | 04/29/2008 |
| 7358102 | Method for fabricating microelectromechanical optical display devices A Method of forming microelectromechanical optical display devices is provided. A sacrificial layer is formed above a substrate. A plurality of posts penetrating the sacrificial layer is formed. A reflective layer and a flexible layer are sequentially formed above t... | 04/15/2008 |
| 7351667 | Etching solution for silicon oxide method of manufacturing a semiconductor device using the same An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by ... | 04/01/2008 |
| 7351354 | Tungsten metal removing solution and method for removing tungsten metal by use thereof A removing solution for removing tungsten metal which causes a film formation on a semiconductor substrate or adheres to it, wherein orthoperiodic acid and water are contained. ... | 04/01/2008 |
| 7338610 | Etching method for manufacturing semiconductor device A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove... | 03/04/2008 |
| 7332440 | Wet etching apparatus and method A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The al... | 02/19/2008 |
| 7332449 | Method for forming dual damascenes with supercritical fluid treatments A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprisin... | 02/19/2008 |
| 7326653 | Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained A method for preparing an organic electronic or optoelectronic device is described. The method comprises depositing a layer of fluorinated polymer on a substrate, patterning the layer of fluorinated polymer to form a relief pattern and depositing from solution a lay... | 02/05/2008 |
| 7326651 | Method for forming damascene structure utilizing planarizing material coupled with compressive diffusion barrier material This invention relates to the manufacture of dual damascene interconnect structures in integrated circuit devices. Specifically, a method is disclosed for forming a single or dual damascene structure in a low-k dielectric thin film utilizing a planarizing material a... | 02/05/2008 |
| 7323080 | Apparatus for treating substrate The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the waf... | 01/29/2008 |
| 7316961 | Method of manufacturing semiconductor device Provided is a method of manufacturing a semiconductor device with enhancements of electrical characteristics. The method includes sequentially forming a lower electrode and an insulating layer on a semiconductor substrate, dry-etching a region of the insulating laye... | 01/08/2008 |
| 7314767 | Method for local wafer thinning and reinforcement A method is provided for preparing a semiconductor wafer for testing. The method includes selecting a die to be tested; measuring a diagonal of the die; thinning an area over the die extending beyond the scribe lines, the thinned area may be a circular area having a... | 01/01/2008 |
| 7303455 | Method of fabricating a light emitting device including a step for cleaning the surface of an anode layer during manufacture A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of ... | 12/04/2007 |
| 7303991 | Atomic layer deposition methods The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition ... | 12/04/2007 |
| 7291559 | Etching method, gate etching method, and method of manufacturing semiconductor devices In a method of manufacturing a semiconductor device, a dummy sample and an actual device are prepared. The dummy sample and the actual device have substantially an identical layer and an identical resist pattern formed on the layer. Then, a dummy discharge is carrie... | 11/06/2007 |
| 7291565 | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fl... | 11/06/2007 |
| 7291562 | Method to form topography in a deposited layer above a substrate In the present invention a dummy structure is formed in a first deposited layer in order to create topography, generally a raised area, in a deposited layer formed above and later than the first deposited layer. This topography may be advantageous in later steps. In... | 11/06/2007 |
| 7282098 | Processing-subject cleaning method and apparatus, and device manufacturing method and device A method for reducing energy consumption, and amounts of cleaning liquids and rinse liquids used. A cleaning head has a plurality of cleaning units and a drying unit. The organic, and inorganic, substance cleaning portions of each cleaning head, blows a first, and a... | 10/16/2007 |
| 7279419 | Formation of self-aligned contact plugs Methods of forming a contact structure for semiconductor assemblies are described. One method provides process steps to create an inner dielectric isolation layer after the contact region is protected, which is followed by the formation of the self-aligned contact s... | 10/09/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7276175 | Semiconductor device fabrication method A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one ... | 10/02/2007 |
| 7276452 | Method for removing mottled etch in semiconductor fabricating process A method for removing mottled etch in a semiconductor fabricating process, prevents mottled etch from being generated after etching, by performing ashing using an oxide plasma, prior to performing wet etching using a photoresist pattern. The method for removing the ... | 10/02/2007 |
| 7273808 | Reactive barrier/seed preclean process for damascene process A method for making a multilayer interconnect electronic component structure, and, in particular, an integrated circuit semiconductor device made using a copper damascene method is provided. The process of the invention uses a method for pre-cleaning exposed copper ... | 09/25/2007 |