Class 438/695 - Simultaneous etching and coating

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the chemical etching and material deposition
No. of patents: 541
Last issue date: 05/22/2012

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Number	Title	Issue Date
8183157	Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are co...	05/22/2012
8153527	Method for reducing sidewall etch residue A method for fabricating a semiconductor device is provided. The method comprising forming a first layer over a substrate and a second layer over the first layer. A patterned masking layer is subsequently provided over the second layer and a patterned second layer w...	04/10/2012
8143167	Fabrication processes for forming dual depth trenches using a dry etch that deposits a polymer Trench isolation structures and methods to form same for use in the manufacture of semiconductor devices are described. The trench isolation structures are formed using several processing schemes that utilize disclosed dry etching processes to form a significant dep...	03/27/2012
8105949	Substrate processing method A substrate processing method that forms an opening, which has a size that fills the need for downsizing a semiconductor device and is to be transferred to an amorphous carbon film, in a photoresist film of a substrate to be processed. Deposit is accumulated on a si...	01/31/2012
8026176	Film forming method, plasma film forming apparatus and storage medium A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step d...	09/27/2011
7915172	Semiconductor substrate and method of fabricating semiconductor device A semiconductor substrate includes a wafer including an element area and a non-element area delineating the element area, a first layered structure situated in the element area, a first insulating film covering the first layered structure, and exhibiting a first etc...	03/29/2011
7906433	Semiconductor device having wirings formed by damascene and its manufacture method A via hole is formed in the interlayer insulating film on a semiconductor substrate, the via hole reaching the bottom of the interlayer insulating film. A filling member fills a lower partial space in the via hole. A wiring trench continuous with the via hole as vie...	03/15/2011
7897516	Use of ultra-high magnetic fields in resputter and plasma etching Methods for resputtering and plasma etching include an operation of generating an ultra-high density plasma using an ultra-high magnetic field. For example, a plasma density of at least about 1013 electrons/cm3 is achieved by confining a plasma...	03/01/2011
7795150	Metal capping of damascene structures to improve reliability using hyper selective chemical-mechanical deposition A method for improving the reliability of integrated circuits. In one embodiment, the method includes forming a dielectric layer on a semiconductor wafer. A trench is then formed in the dielectric. Thereafter, a conductive interconnect is formed within the trench, w...	09/14/2010
7776748	Selective-redeposition structures for calibrating a plasma process Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma ...	08/17/2010
7772121	Method of forming a trench structure A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the ...	08/10/2010
7754613	Etching method and etching apparatus Etching and protective-film deposition operations E and D are in alternation repeatedly executed on a silicon substrate carried on a platform within a processing chamber. With gas inside the processing chamber having been exhausted to pump down the chamber interior,...	07/13/2010
7727893	Method of forming a dielectric layer pattern and method of manufacturing a non-volatile memory device using the same In a method of forming a dielectric layer pattern, lower patterns are formed on a substrate. A first dielectric layer is formed on sidewalls and upper surfaces of the lower patterns and a surface of the substrate. A mask pattern is formed on the first dielectric lay...	06/01/2010
7709388	Semiconductor device with a line and method of fabrication thereof A semiconductor device includes an interlayer insulation film, an underlying line provided in the interlayer insulation film, a liner film overlying the interlayer insulation film, an interlayer insulation film overlying the liner film. The underlying line has a low...	05/04/2010
7670952	Method of manufacturing metal silicide contacts A method of manufacturing a semiconductor device, comprising forming a metal silicide gate electrode on a semiconductor substrate surface. The method also comprises exposing the metal silicide gate electrode and the substrate surface to a cleaning process. The clean...	03/02/2010
7666791	Systems and methods for nanowire growth and harvesting The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In...	02/23/2010
7659207	Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafer Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by placing a wafer on a susceptor, pretreating under a hydrogen atmosphere, in and then with addition of an etching medium, and coating epitaxially on a polished front side, wherein an ...	02/09/2010
7655568	Method for manufacturing underlying pattern of semiconductor device Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing photoresist film. ...	02/02/2010
7618894	Multi-step selective etching for cross-point memory Multi-step selective etching. Etching an unmasked region associated with each layer of a plurality of layers, the plurality of layers comprising a stack, wherein the unmasked region of each of the plurality of layers is etched while exposed to a temperature, a press...	11/17/2009
7608544	Etching method and storage medium An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is executed by a substrate processing apparatus that performs plasma proce...	10/27/2009
7605084	Method of gap-filling using amplitude modulation radio frequency power A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into the chamber; supplying a process gas into the chamber; filling a thin...	10/20/2009
7572733	Gas switching during an etch process to modulate the characteristics of the etch Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least once. For example, the first step may result in a high etch rate of oxi...	08/11/2009
7569484	Plasma and electron beam etching device and method Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activati...	08/04/2009
7560385	Etching systems and processing gas specie modulation A method and system for etching a substrate control selectivity of the etch process by modulating the gas specie of the reactants. The gas specie selectively form and etch a buffer layer that protects underlying etch stop materials thereby providing highly selective...	07/14/2009
7544620	Process for digging a deep trench in a semiconductor body and semiconductor body so obtained A process for digging deep trenches in a body of semiconductor material includes forming a mask having an opening, above a surface of a semiconductor body. A passivating layer is conformally formed on the mask and on the semiconductor body within the opening. A dire...	06/09/2009
7541288	Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition step results in the formation of an electrically insulating layer hav...	06/02/2009
7538036	Methods of forming openings, and methods of forming container capacitors A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking lay...	05/26/2009
7476621	Halogen-free noble gas assisted Hplasma etch process in deposition-etch-deposition gap fill Plasma etch processes incorporating H2/Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen and one or more No...	01/13/2009
7459400	Patterned structures fabricated by printing mask over lift-off pattern A patterned integrated circuit structure defining a gap or via is fabricated solely by digital printing and bulk processing. A sacrificial lift-off pattern is printed or otherwise formed over a substrate, and then covered by a blanket layer. A mask is then formed, e...	12/02/2008
7439143	Flash memory device and method of manufacturing the same Disclosed is a flash memory device. The flash memory device includes a plurality of trench lines in an isolation region of a semiconductor device, a common source region along a word line (WL) direction under a surface portion of the semiconductor substrate, a plura...	10/21/2008
7435684	Resolving of fluorine loading effect in the vacuum chamber This invention relates to electronic device fabrication processes for making devices such as semiconductor wafers and resolves the fluorine loading effect in the reaction chamber of a HDP CVD apparatus used for forming dielectric layers in high aspect ratio, narrow ...	10/14/2008
7429535	Use of a plasma source to form a layer during the formation of a semiconductor device A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of insulation having at least one contact therein and a surface, and further com...	09/30/2008
7429533	Pitch reduction A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the sacrificial features, comprising at least two cycles of a sidewall formation p...	09/30/2008
7427568	Method of forming an interconnect structure A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the ...	09/23/2008
7413960	Method of forming floating gate electrode in flash memory device A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be generated between an active region and the inactive region, which are def...	08/19/2008
7410901	Submicron device fabrication A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids in the first oxide layer to expose the substrate. A second oxide layer...	08/12/2008
7405139	Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chi...	07/29/2008
7390748	Method of forming a polishing inhibiting layer using a slurry having an additive A polishing inhibiting layer forming additive for a slurry, the slurry so formed, and a method of chemical mechanical polishing are disclosed. The polishing inhibiting layer is formed through application of the slurry to the surface being polished and is removable a...	06/24/2008
7384873	Manufacturing process of semiconductor device A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor substrate, by avoiding at least part of the electrode; removing an oxide fil...	06/10/2008
7381638	Fabrication technique using sputter etch and vacuum transfer First material (106) is situated on the surface of a substructure (100 and 102) and in an opening (104), such as a Wench, that extends partway through the substructure. Second material (108) is situated on the first material in the...	06/03/2008

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Class 438/695 - Simultaneous etching and coating