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| Number | Title | Issue Date |
| 8168542 | Methods of forming tubular objects A tubular object is fabricated by a method comprising the steps of providing a first layer, forming a second layer on the first layer, and then patterning the second layer to form a raised feature with one or more sidewalls. Subsequently, the first layer is processe... | 05/01/2012 |
| 8163651 | Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereof The invention discloses a method of fabricating a first substrate and a method of recycling a second substrate during fabrication of the first substrate. The second substrate is heterogeneous for the first substrate. First, the fabricating method according to the in... | 04/24/2012 |
| 8158521 | Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness... | 04/17/2012 |
| 8138092 | Spacer formation for array double patterning A method for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and covers the entire periphery area is provided. The patterned organi... | 03/20/2012 |
| 8129280 | Substrate device having a tuned work function and methods of forming thereof Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comp... | 03/06/2012 |
| 8119530 | Pattern forming method and semiconductor device manufacturing method A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus... | 02/21/2012 |
| 8114777 | Horizontal nanotube/nanofiber growth method A method for forming a nanotube/nanofiber growth catalyst on the sides of portions of a layer of a first material, comprising the steps of depositing a thin layer of a second material; opening this layer at given locations; depositing a very thin catalyst layer; dep... | 02/14/2012 |
| 8080477 | Film formation apparatus and method for using same A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a... | 12/20/2011 |
| 8062980 | Method of fabricating semiconductor device A method of fabricating a semiconductor device according to one embodiment includes: forming a core material on a workpiece; forming a coating film comprising an amorphous material so as to cover an upper surface and side faces of the core material; crystallizing th... | 11/22/2011 |
| 8058174 | Method for treating semiconductor processing components and components formed thereby A semiconductor processing component has an outer surface portion comprised of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is average impurity level from 0 nm to 100 nm of depth into the ... | 11/15/2011 |
| 8053368 | Method for removing residues from a patterned substrate The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC la... | 11/08/2011 |
| 8039400 | Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition A conductive barrier material of a metallization system of a semiconductor device may be formed on the basis of one or more deposition/etch cycles, thereby providing a reduced material thickness in the bevel region, while enhancing overall thickness uniformity in th... | 10/18/2011 |
| 8039399 | Methods of forming patterns utilizing lithography and spacers Some embodiments include methods of forming patterns. A first set of features is photolithographically formed over a substrate, and then a second set of features is photolithographically formed over the substrate. At least some of the features of said second set alt... | 10/18/2011 |
| 8030214 | Method of fabricating gate structures An embodiment of the disclosure includes a method of forming metal gate structures. A substrate is provided. A first dummy gate electrode and a second dummy gate electrode are formed on the substrate. The first dummy gate electrode comprises first spacers on its sid... | 10/04/2011 |
| 7994059 | Enhanced stress transfer in an interlayer dielectric by using an additional stress layer above a dual stress liner in a semiconductor device By forming an additional stressed dielectric material after patterning dielectric liners of different intrinsic stress, a significant increase of performance in transistors may be obtained while substantially not contributing to patterning non-uniformities during th... | 08/09/2011 |
| 7994060 | Dual exposure track only pitch split process An integrated circuit is formed with structures spaced more closely together than a transverse dimension of such structures, such as for making contacts to electronic elements formed at minimum lithographically resolvable dimensions by dark field split pitch techniq... | 08/09/2011 |
| 7985682 | Method of fabricating semiconductor device A method of fabricating a semiconductor device includes forming a first film on a processed film, patterning the first film into a pattern with smaller width and a space with larger width, forming a second film along upper and side surfaces of first film and an uppe... | 07/26/2011 |
| 7985683 | Method of treating a semiconductor substrate A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of... | 07/26/2011 |
| 7981803 | Method of forming micro pattern of semiconductor device The present invention relates to a method of forming a micro pattern of a semiconductor device. In the method according to an aspect of the present invention, an etch target layer, a first hard mask layer, and insulating patterns of a lonzenge are formed over a semi... | 07/19/2011 |
| 7977243 | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodati... | 07/12/2011 |
| 7977242 | Double mask self-aligned double patterning technology (SADPT) process A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, e... | 07/12/2011 |
| 7964509 | Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual... | 06/21/2011 |
| 7951719 | Self-masking defect removing method A method for removing defects from a semiconductor surface is disclosed. The surface of the semiconductor is first coated with a protective layer, which is later thinned to selectively reveal portions of the protruding defects. The defects are then removed by etchin... | 05/31/2011 |
| 7947605 | Post ion implant photoresist strip using a pattern fill and method A method is described for use in a system that removes an implant crust that is formed as an outermost layer of photoresist in a photoresist pattern that is supported by a workpiece. The photoresist pattern defines apertures which lead to an active device region. Th... | 05/24/2011 |
| 7943520 | Hole pattern forming method and semiconductor device manufacturing method A hole pattern forming method that forms a fine hole pattern in a work target layer that is formed on a semiconductor substrate, includes: forming a three-layer structure by laminating a carbon film layer, an intermediate mask layer, and a photoresist layer in that ... | 05/17/2011 |
| 7943521 | Method for patterning a semiconductor device A method for patterning a semiconductor device can include forming a conductive layer over a semiconductor substrate; alternatively forming positive photoresists and negative photoresists over the conductive layer, forming a plurality of first conductive lines by se... | 05/17/2011 |
| 7935636 | Method of fabricating semiconductor device An insulating film is formed on a main surface of a substrate. A conductive film is formed on the insulating film. A lower layer resist film, an intermediate layer, an anti-reflection film and an upper layer resist film are formed on the conductive film. A focal poi... | 05/03/2011 |
| 7915170 | Reducing contamination of semiconductor substrates during beol processing by providing a protection layer at the substrate edge By providing a protection layer at the bevel region, the deposition of polymer materials during the patterning process of complex metallization structures may be reduced. Additionally or alternatively, a surface topography may be provided, for instance in the form o... | 03/29/2011 |
| 7915171 | Double patterning techniques and structures Double patterning techniques and structures are generally described. In one example, a method includes depositing a first photoresist to a semiconductor substrate, forming a first integrated circuit (IC) pattern in the first photoresist, the first IC pattern compris... | 03/29/2011 |
| 7910484 | Method for preventing backside defects in dielectric layers formed on semiconductor substrates A method of forming a TEOS oxide layer over an nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide layer formed on a substrate. The method includes forming the nitrogen doped silicon carbide or nitrogen doped hydrogenated silicon carbide la... | 03/22/2011 |
| 7906432 | Method for manufacturing semiconductor device A method of manufacturing a semiconductor device in which a source contact plug and a drain contact plug are formed. The method includes the steps of etching part of the semiconductor substrate to form a step, thus forming an overlay vernier, and forming a hard mask... | 03/15/2011 |
| 7902073 | Glue layer for hydrofluorocarbon etch A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofl... | 03/08/2011 |
| 7897515 | Method of fabricating structures A method of processing a stack, the method including depositing a fusible material on a first hardmask layer, the first hardmask layer disposed on a surface of a pre-processed stack, the pre-processed stack being disposed on at least a portion of a substrate; heatin... | 03/01/2011 |
| 7892977 | Hard mask patterns of a semiconductor device and a method for forming the same In a method for forming hard mask patterns of a semiconductor device first hard mask patterns are formed on a semiconductor substrate. Second hard mask patterns are formed and include first patterns which are substantially perpendicular to the first hard mask patter... | 02/22/2011 |
| 7879725 | Stripping composition for removing a photoresist and method of manufacturing TFT substrate for a liquid crystal display device using the same In a stripping composition for easily removing a photoresist without an adverse effect and a method of manufacturing a TFT substrate for an LCD device using the same, the stripping composition includes acetic acid and ozone gas contained in the acetic acid as a bubb... | 02/01/2011 |
| 7851364 | Method for forming pattern in semiconductor device A method for forming a pattern in a semiconductor device includes forming an etch target layer comprising metal over a substrate. A hard mask pattern is formed over the etch target layer. The etch target layer is etched to form a pattern such that a line width of th... | 12/14/2010 |
| 7851363 | Pattern forming method and manufacturing method of semiconductor device A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating t... | 12/14/2010 |
| 7851365 | Methods for preparing semiconductor substrates and interfacial oxides thereon The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepar... | 12/14/2010 |
| 7838426 | Mask trimming A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depo... | 11/23/2010 |
| 7829465 | Method for plasma etching of positively sloped structures The present invention provides a method of etching features in a substrate. The method comprising the steps of placing the substrate on a substrate support in a vacuum chamber. An alternatingly and repeating process is performed on the substrate until a predetermine... | 11/09/2010 |
