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Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 6878631 | Abrasive used for planarization of semiconductor device and method of manufacturing semiconductor device using the abrasive An abrasive for a semiconductor device comprises cerium oxide particles and coating materials. The cerium oxide particles are made principally of cerium oxide (CeO2). The coating materials cover the surface of the cerium oxide particles. ... | 04/12/2005 |
| 6875696 | Ultrasonic-wave washing unit, ultrasonic-wave washing apparatus, ultrasonic-wave washing method, method of manufacturing a semiconductor device, and method of manufacturing a liquid crystal display An ultrasonic-wave washing unit comprising an ultrasonic-wave vibrating plate to which an ultrasonic-wave vibrator is fixed by adhesive bonding, an ultrasonic-wave transmission plate opposed to the vibrating plate, a liquid supply means which supplies a liquid to a ... | 04/05/2005 |
| 6867138 | Method of chemical/mechanical polishing of the surface of semiconductor device The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry variable so that the top portion of the polishing pad is soaked with t... | 03/15/2005 |
| 6867140 | Method of polishing a multi-layer substrate The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizi... | 03/15/2005 |
| 6863700 | Cerium oxide abrasive and method of polishing substrates A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g... | 03/08/2005 |
| 6861360 | Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers A silicon semiconductor wafer with a diameter of greater than or equal to 200 mm and a polished front surface and a polished back surface and a maximum local flatness value SFQRmax of less than or equal to 0.13 μm, based on a surface grid of segments wit... | 03/01/2005 |
| 6861353 | Methods for planarization of metal-containing surfaces using halogens and halide salts A planarization method includes providing a metal-containing surface (preferably, a Group VIII metal-containing surface, and more preferably a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization com... | 03/01/2005 |
| 6857434 | CMP slurry additive for foreign matter detection A method and structure polishes and cleans silicon wafers by mixing a marker with a slurry to form a slurry mixture, performs chemical mechanical polishing on a silicon wafer using the slurry mixture, rinses the slurry mixture from the silicon wafer, checks the sili... | 02/22/2005 |
| 6858540 | Selective removal of tantalum-containing barrier layer during metal CMP A method for performing chemical-mechanical polishing/planarization providing highly selective, rapid removal of a Ta-containing barrier layer from a workpiece surface, such as a semiconductor wafer including a damascene-type Cu-based metallization pattern in-laid i... | 02/22/2005 |
| 6858539 | Post-CMP treating liquid and method for manufacturing semiconductor device There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and ... | 02/22/2005 |
| 6858538 | Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies Methods and devices for mechanical and/or chemical-mechanical polarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of plagiarizing a micro electronic substrate assembly in accordance with the invent... | 02/22/2005 |
| 6858531 | Electro chemical mechanical polishing method Embodiments of the invention include a method for electro chemical mechanical polishing of a substrate. The process includes flowing an electro chemical mechanical polishing (ECMP) slurry having a high viscosity with a polishing agent over a portion of the substrate... | 02/22/2005 |
| 6857950 | Polishing apparatus, semiconductor device manufacturing method using the polishing apparatus, and semiconductor device manufactured by the manufacturing method The present invention provides a polishing apparatus with a construction which makes it possible to prevent the peripheral portions of a substrate from sloping downward as a result of the polishing member tilting at the peripheral portions of the substrate during th... | 02/22/2005 |
| 6854484 | Valve for a slurry outlet opening of a chemical mechanical polishing device and chemical mechanical polishing device having a valve A valve for a slurry outlet opening in an installation for chemical mechanical polishing, in particular of semiconductor wafers in DRAM production, includes an elastic diaphragm, which covers the slurry outlet opening and has at least one self-closing opening. It is... | 02/15/2005 |
| 6849548 | Method of reducing particulate contamination during polishing of a wafer A method of polishing the surface of a semiconductor wafer such that the adherence of abrasive particles to the surface of the wafer is minimized, resulting in a semiconductor wafer having a reduced number of pits. The invented method has two stages. The first stage... | 02/01/2005 |
| 6849547 | Apparatus and process for polishing a workpiece A process for removing a metallized surface from a workpiece is provided. A kinetic removal mechanism for removal of the metallized surface is characterized by a formation step for formation of a removable surface film and an abrasive step for removal of the film. T... | 02/01/2005 |
| 6849542 | Method for manufacturing a semiconductor device that includes planarizing with a grindstone that contains fixed abrasives The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pa... | 02/01/2005 |
| 6849099 | Polishing composition There is provided a polishing composition that reduces erosion and is used in a final polishing step of a semiconductor device manufacturing process. The polishing composition contains colloidal silica, a periodic acid compound, ammonia, ammonium nitrate and water a... | 02/01/2005 |
| 6840971 | Chemical mechanical polishing systems and methods for their use Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics. ... | 01/11/2005 |
| 6841470 | Removal of residue from a substrate A method and an apparatus of removing a particle from a metal plug on a substrate is disclosed. The method comprises introducing a slurry onto the metal layer and polishing the metal layer. A solution comprising hydrogen peroxide is introduced onto the metal plug an... | 01/11/2005 |
| 6841480 | Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer... | 01/11/2005 |
| 6838382 | Method and apparatus for forming a planarizing pad having a film and texture elements for planarization of microelectronic substrates A planarizing pad for planarzing a microelectronic substrate, and a method and apparatus for forming the planarizing pad. In one embodiment, planarzing pad material is mixed with compressed gas to form a plurality of discrete elements that are distributed on a film ... | 01/04/2005 |
| 6833324 | Process and device for cleaning a semiconductor wafer A surface of a semiconductor wafer is cleaned following a chemical mechanical polishing process. With the semiconductor wafer rotating continuously, an integrated process sequence is used to etch the surface, rinse the surface, and they dry the surface. The apparatu... | 12/21/2004 |
| 6833109 | Method and apparatus for storing a semiconductor wafer after its CMP polishing In an apparatus, after completion of a CMP (i.e., chemical mechanical polishing) operation of a semiconductor wafer, the thus polished wafer is temporarily stored in a water tank before it is subjected to a post-CMP cleaning operation. During its storage period in t... | 12/21/2004 |
| 6831047 | Cleaning composition useful in semiconductor integrated circuit fabrication A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water ... | 12/14/2004 |
| 6830504 | Barrier-slurry-free copper CMP process A method of polishing a metal layer comprising the following steps. A structure having an upper patterned dielectric layer with an opening therein is provided. A barrier layer is formed over the patterned upper dielectric layer and lining the opening. A metal layer ... | 12/14/2004 |
| 6830500 | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods A method for substantially simultaneously polishing a copper conductive structure of a semiconductor device structure and an adjacent barrier layer includes use of a fixed-abrasive type polishing pad with a substantially abrasive-free slurry in which copper is remov... | 12/14/2004 |
| 6827752 | Cerium oxide slurry, and method of manufacturing substrate A problem to be solved is to provide a slurry that is capable of flattening an uneven film on a substrate with good precision, and that has good stability, not separating into two layers, solidifying through flocculated settling or undergoing changes in viscosity. T... | 12/07/2004 |
| 6825120 | Metal surface and film protection method to prolong Q-time after metal deposition The present invention relates to a method of protecting a fresh metal surface, preferably copper, after a metal deposition step. The metal deposition is preferably part of single or dual damascene process. The metal surface is treated with an amine, preferably BTA, ... | 11/30/2004 |
| 6825117 | High PH slurry for chemical mechanical polishing of copper A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 | 11/30/2004 |
| 6825116 | Method for removing structures A method for removing structures from a substrate is described. The method includes providing a substrate that has the structures that must be removed, applying a sacrifice layer, and removing the structures and the sacrifice layer in a polishing step. The method ha... | 11/30/2004 |
| 6821897 | Method for copper CMP using polymeric complexing agents The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively-ch... | 11/23/2004 |
| 6821895 | Dynamically adjustable slurry feed arm for wafer edge profile improvement in CMP A dynamically adjustable slurry feed arm and method for adjusting the same in a CMP process including carrying out the CMP process for a predetermined period of time on a substrate comprising a polishing layer to remove a portion of a polishing layer; determining th... | 11/23/2004 |
| 6821896 | Method to eliminate via poison effect A method is provided for forming contact/via hole openings without the detrimental volcano effect that is normally encountered in forming damascene structures. It is disclosed that the hole openings are needed to be filled with a protective material, in the first pl... | 11/23/2004 |
| 6821894 | CMP process The optimization of a CMP process provides the use of an auxiliary layer (4) between a dielectric (1) in the vicinity of patterned portions and a layer of a liner (2). If the liner (2) is perforated in the CMP process, then the undercutti... | 11/23/2004 |
| 6818031 | Polishing composition A polishing composition comprising an abrasive, an oxidizing agent, a polishing accelerator, and water, wherein the polishing accelerator comprises an organic phosphonic acid; a method for manufacturing a substrate, comprising polishing a substrate to be polished wi... | 11/16/2004 |
| 6818030 | Process for producing abrasive particles and abrasive particles produced by the process The present invention provides a process for producing particles suitable for use as abrasives in chemical-mechanical polishing slurries. The process according to the invention includes mixing at least one crystallization promoter such as Ti[OCH(CH3)... | 11/16/2004 |
| 6815357 | Process and apparatus for manufacturing a semiconductor device A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abr... | 11/09/2004 |
| 6815353 | Multi-layer film stack polish stop A method for improved dielectric polish control adjacent to device areas is described. This is particularly important for bipolar structures, although the method may be used for MOS structures as well. The method includes using highly selective methods for removing ... | 11/09/2004 |
| 6814766 | Polishing composition and polishing method employing it A polishing composition for polishing a semiconductor device having at least a tungsten film and an insulating film, which comprises the following components (a) to (d): (a) silicon dioxide, (b) periodic acid,... | 11/09/2004 |
