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| Number | Title | Issue Date |
| 8435897 | Method for reclaiming a surface of a substrate A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the ... | 05/07/2013 |
| RE44071 | Method for patterning a multilayered conductor/substrate structure A method for patterning a multilayered conductor/substrate structure includes the steps of: providing a multilayered conductor/substrate structure which includes a plastic substrate and at least one conductive layer overlying the plastic substrate; and irradiating t... | 03/12/2013 |
| 8361903 | Method and apparatus for ultra thin wafer backside processing A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within t... | 01/29/2013 |
| 8273660 | Method of manufacturing a dual face package A method of manufacturing a dual face package, including: preparing an upper substrate composed of an insulating layer including a post via-hole; forming a filled electrode in a semiconductor substrate, the filled electrode being connected to a die pad; applying an ... | 09/25/2012 |
| 8227350 | Controlling diamond film surfaces and layering A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first diamond film comprises a surface comprising diamond asperities and ha... | 07/24/2012 |
| 8187976 | Stable P-type semiconducting behaviour in Li and Ni codoped ZnO A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin fi... | 05/29/2012 |
| 8101523 | Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 di... | 01/24/2012 |
| 8058172 | Polishing process of a semiconductor substrate A polishing composition containing at least one or more aminocarboxylic acids selected from the group consisting of serine, cysteine and dihydroxyethylglycine, ceria particles and an aqueous medium; a polishing process of a semiconductor substrate, including the ste... | 11/15/2011 |
| 8048808 | Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3−) an... | 11/01/2011 |
| 8043969 | Method for manufacturing semiconductor device A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the... | 10/25/2011 |
| 8039396 | Method for manufacturing photovoltaic device Provided is a method for manufacturing a photovoltaic device which is capable of easily forming a texture having an aspect ratio larger than 0.5. The method for manufacturing a photovoltaic device include the steps of: forming an etching-resistant film on a silicon ... | 10/18/2011 |
| 8008201 | Aqueous cerium oxide dispersion Aqueous cerium oxide dispersion Aqueous cerium oxide dispersion, containing 5 to 60% by weight cerium oxide. It can be used to polish SiO2 in the semiconductor industry. ... | 08/30/2011 |
| 8003537 | Method for the production of planar structures A method for the production of a planar structure is disclosed. The method comprises producing on a substrate a plurality of structures of substantially equal height, and there being a space in between the plurality of structures. The method further comprises provid... | 08/23/2011 |
| 7998865 | Systems and methods for removing wafer edge residue and debris using a residue remover mechanism A system (500) removes wafer edge residue from a target wafer (508). A wafer holding mechanism (502) holds and rotates the target wafer (508). A residue remover mechanism (504) mechanically interacts or abrades an edge surface of t... | 08/16/2011 |
| 7998866 | Silicon carbide polishing method utilizing water-soluble oxidizers The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent. ... | 08/16/2011 |
| 7994057 | Polishing composition and method utilizing abrasive particles treated with an aminosilane The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound. ... | 08/09/2011 |
| 7994056 | Method for forming pattern in semiconductor device A method for forming a pattern in a semiconductor device includes forming an etch-target layer over a substrate, wherein the substrate includes a first region having a smaller pattern than the first region, forming a sacrificial layer and a passivation layer over th... | 08/09/2011 |
| 7972962 | Planarization method using hybrid oxide and polysilicon CMP A method of planarizing a semiconductor device is provided. The semiconductor device includes a substrate, first and second components provided on the surface of the substrate, and a first material provided between and above the first and second components. The firs... | 07/05/2011 |
| 7902072 | Metal-polishing composition and chemical-mechanical polishing method A metal-polishing composition includes colloidal silica particles, which has a ratio of minor axis/major axis of 0.2 to 0.8 and a surface at least partially covered with aluminum atoms, comprises in an amount of 50% or more with respect to total abrasives. Th... | 03/08/2011 |
| 7858527 | Additive composition, slurry composition including the same, and method of polishing an object using the slurry composition An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a sec... | 12/28/2010 |
| 7851361 | Laser ablation to selectively thin wafers/die to lower device R A laser ablated wafer for a semiconductor device, such as a MOSFET or other power device, and a method of producing such a wafer to achieve a lower electrical resistance are provided. The method includes forming first holes, slots or trenches on a first surface of t... | 12/14/2010 |
| 7838425 | Method of treating surface of semiconductor substrate A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the ... | 11/23/2010 |
| 7829464 | Planarization method using hybrid oxide and polysilicon CMP A method of planarizing a semiconductor device is provided. The semiconductor device includes a substrate, first and second components provided on the surface of the substrate, and a first material provided between and above the first and second components. The firs... | 11/09/2010 |
| 7803711 | Low pH barrier slurry based on titanium dioxide The invention provides a method of chemically-mechanically polishing a substrate. A substrate is contacted with a polishing pad and a polishing composition comprising an abrasive consisting of (A) particles consisting of titanium dioxide having a rutile structure an... | 09/28/2010 |
| 7799687 | Slurry composition for a chemical mechanical polishing process and method of manufacturing a semiconductor device using the slurry composition A slurry composition for a chemical mechanical polishing process and a method of manufacturing a semiconductor memory device using the slurry composition are provided. The slurry composition may include about 0.001 percent by weight to about 5 percent by weight of a... | 09/21/2010 |
| 7799686 | Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent, and water; a method for producing it; and a polishing method of using i... | 09/21/2010 |
| 7776747 | Semiconductor device and method for forming pattern in the same A method for forming a fine pattern of a semiconductor device includes forming a first hard mask layer over a semiconductor substrate, forming a second hard mask layer pattern over the first hard mask layer, forming a spacer on a sidewall of the second hard mask lay... | 08/17/2010 |
| 7776746 | Method and apparatus for ultra thin wafer backside processing A method and apparatus for ultra thin wafer backside processing are disclosed. The apparatus includes an outer ring holding a high temperature grinding and/or dicing tape to form a support structure. An ultra thin wafer or diced wafer is adhered to the tape within t... | 08/17/2010 |
| 7749907 | Method for manufacturing semiconductor device A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the... | 07/06/2010 |
| 7723233 | Semiconductor device and method of fabricating a semiconductor device A method is proposed for the fabrication of the gate electrode of a semiconductor device such that the effects of gate depletion are minimized. The method is comprised of a dual deposition process wherein the first step is a very thin layer that is doped very heavil... | 05/25/2010 |
| 7700488 | Recycling of ion implantation monitor wafers A wafer processing method. The method includes providing a semiconductor wafer. The semiconductor wafer includes (i) a semiconductor layer and (ii) a dopant layer on top of the semiconductor layer. The dopant layer comprises dopants. The method further includes remo... | 04/20/2010 |
| 7687400 | Side stacking apparatus and method A module has at least two ICs connected to each other such that they lie in different planes and are arranged as a first stack of ICs, a third IC is connected to at least one of the at least two ICs, wherein the third IC is off plane from both of the at least two IC... | 03/30/2010 |
| 7625821 | Process and apparatus for thinning a semiconductor workpiece The present invention provides system and apparatus for use in processing wafers. The new system and apparatus allows for the production of thinner wafers that at same time remain strong. As a result, the wafers produced by the present process are less susceptible t... | 12/01/2009 |
| 7579279 | Method to passivate conductive surfaces during semiconductor processing A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The solution can be applied during a CMP process or during a post CMP cle... | 08/25/2009 |
| 7576007 | Method for electrochemically mechanically polishing a conductive material on a substrate Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For examp... | 08/18/2009 |
| 7557041 | Apparatus and method for supplying chemicals A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided from the first and second mixing tanks such that the slurry is continu... | 07/07/2009 |
| 7550387 | Semiconductor wafer processing method A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device in the condition where the additional layer is exposed, and a table ... | 06/23/2009 |
| 7510972 | Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulati... | 03/31/2009 |
| 7504337 | IC chip uniform delayering methods Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the wafer using a slurry including an approximately 30 μm polishing partic... | 03/17/2009 |
| 7470622 | Fabrication and use of polished silicon micro-mirrors A method of fabricating silicon micro-mirrors includes etching from opposite sides of a silicon wafer with a polished surface on at least one of the opposite sides, to form silicon bars each having a parallelogram-shaped cross-section and including a portion of the ... | 12/30/2008 |
