Class 438/685 - Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for forming the contact using a refractory metal
No. of patents: 921
Last issue date: 05/01/2012

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Number	Title	Issue Date
8168539	Method for forming tungsten film at a surface of a processing target material, film-forming apparatus, storage medium and semiconductor device with a tungsten film A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related a...	05/01/2012
8124531	Depositing tungsten into high aspect ratio features Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by ...	02/28/2012
8119527	Depositing tungsten into high aspect ratio features Methods of filling high aspect ratio features provided on partially manufactured semiconductor substrates with tungsten-containing materials are provided. In certain embodiments, the methods include partial filling a high aspect ratio feature with a layer of tungste...	02/21/2012
8071478	Method of depositing tungsten film with reduced resistivity and improved surface morphology A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow...	12/06/2011
8048805	Methods for growing low-resistivity tungsten film Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods...	11/01/2011
7955979	Method of growing electrical conductors A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin fil...	06/07/2011
7846840	Method for forming tungsten materials during vapor deposition processes In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane a...	12/07/2010
7737037	Semiconductor device and method of manufacturing the same An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturi...	06/15/2010
7674715	Method for forming tungsten materials during vapor deposition processes In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane a...	03/09/2010
7662717	Method of forming metal layer used in the fabrication of semiconductor device A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined ti...	02/16/2010
7655567	Methods for improving uniformity and resistivity of thin tungsten films The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tu...	02/02/2010
7592257	Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of forming The method includes providing a patterned structure in a process chamber, where the patterned structure contains a micro-feature formed in a dielectric material and a contact layer at the bottom of the micro-feature, and depositing a metal carbonitride or metal carb...	09/22/2009
7592256	Method of forming tungsten film A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungst...	09/22/2009
7579277	Semiconductor device and method for fabricating the same A semiconductor device in which the diffusion of copper from a wire is prevented and a method for fabricating such a semiconductor device. For example, a via groove and a wire groove are formed in a multilayer structure including a UDC diffusion barrier film, a poro...	08/25/2009
7524766	Method for manufacturing semiconductor device and substrate processing apparatus To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source...	04/28/2009
7517800	Semiconductor device and manufacturing method thereof A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the formed TiN film in an atmosphere of NH3 gas, an NH3	04/14/2009
7507664	Tungsten plug corrosion prevention method using ionized air Disclosed herein is a method of making integrated circuits. In one embodiment the method includes forming tungsten plugs in the integrated circuit and forming electrically conductive interconnect lines in the integrated circuit after formation of the tungsten plugs....	03/24/2009
7498262	Method of fabricating a thin film and metal wiring in a semiconductor device A method for forming a thin film of a semiconductor device, which may include at least one of the following steps: Forming a Tantalum Nitride (TaN) film over a semiconductor substrate by atomic layer deposition. Forming a Tantalum (Ta) film by converting at least a ...	03/03/2009
7494927	Method of growing electrical conductors A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin fil...	02/24/2009
7465665	Method for depositing tungsten-containing layers by vapor deposition techniques In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposit...	12/16/2008
7465666	Method for forming tungsten materials during vapor deposition processes In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane a...	12/16/2008
7462560	Process of physical vapor depositing mirror layer with improved reflectivity A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer deg...	12/09/2008
7439192	Method of forming a layer on a semiconductor substrate In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a fi...	10/21/2008
7439175	Method for fabricating a thin film and metal line of semiconductor device A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate, and converting a portion of the TaN film into a Ta film by reacting the TaN film with NO2. The Ta film is formed t...	10/21/2008
7435670	Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of a substrate so as to expose a...	10/14/2008
7432201	Hybrid PVD-CVD system A method for making a film stack containing one or more silicon-containing layers and one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes one or more t...	10/07/2008
7432193	Method for fabricating a thin film and a metal line of a semiconductor device A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with ...	10/07/2008
7427568	Method of forming an interconnect structure A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the ...	09/23/2008
7422979	Method of forming a semiconductor device having a diffusion barrier stack and structure thereof A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier la...	09/09/2008
7419904	Method for forming barrier film and method for forming electrode film In the present invention, a barrier film 20 is formed by forming a tungsten nitride film 21 and subsequently by forming a tungsten silicide film 22. The tungsten silicide film 22 is exposed at the surface of the barrier film 20, an...	09/02/2008
7416980	Forming a barrier layer in interconnect joints and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer. ...	08/26/2008
7416932	Power composite integrated semiconductor device and manufacturing method thereof A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper...	08/26/2008
7416979	Deposition methods for barrier and tungsten materials Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barr...	08/26/2008
7416981	Method of forming metal layer used in the fabrication of semiconductor device A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined ti...	08/26/2008
7407888	Semiconductor device and a fabrication process thereof A method of fabricating a semiconductor device comprises the steps of forming a contact hole in an insulation film so as to extend therethrough and so as to expose a conductor body at a bottom part of the contact hole, forming a barrier metal film of tungsten nitrid...	08/05/2008
7407892	Deposition methods The invention includes deposition methods and apparatuses which can be utilized during atomic layer deposition or chemical vapor deposition. A heated surface is provided between a stack of semiconductor substrates and a precursor inlet, and configured so that proble...	08/05/2008
7402518	Atomic layer deposition methods A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface m...	07/22/2008
7402514	Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer An embodiment of the instant invention is a method of providing a connection between a first conductor and a second conductor wherein the first conductor is situated under the second conductor and separated by a first insulating layer, the method comprising the step...	07/22/2008
7390743	Methods for forming a structured tungsten layer and forming a semiconductor device using the same A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A second tungsten layer is formed on the first tungsten layer with a chemi...	06/24/2008
7384867	Formation of composite tungsten films Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer. ...	06/10/2008

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Class 438/685 - Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)