Class 438/683 - Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for forming a contact using the chemical combination
No. of patents: 732
Last issue date: 10/18/2011

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Number	Title	Issue Date
8039394	Methods of forming layers of alpha-tantalum A method of forming a layer of alpha-tantalum on a substrate including the steps of depositing a layer of titanium nitride on a substrate; and depositing a layer of alpha-tantalum on the layer of titanium nitride, wherein the deposition of the alpha-tantalum is carr...	10/18/2011
7951713	Method of forming metal wiring in semiconductor device A method for forming a metal wiring of a semiconductor device capable of efficiently preventing a hillock phenomenon occurred in a subsequent annealing process of a metal wiring process. The method for forming a metal wiring of a semiconductor device includes formin...	05/31/2011
7863193	Integrated circuit fabrication process using a compression cap layer in forming a silicide with minimal post-laser annealing dopant deactivation Post-laser annealing dopant deactivation is minimized by performing certain silicide formation process steps prior to laser annealing. A base metal layer is deposited on the source-drain regions and the gate electrode, followed by deposition of an overlying compress...	01/04/2011
7825025	Method and system for improved nickel silicide According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and t...	11/02/2010
7799682	Transistor having a locally provided metal silicide region in contact areas and a method of forming the transistor By performing a silicidation process on the basis of a patterned dielectric layer, such as an interlayer dielectric material, the respective metal silicide portions may be provided in a highly localized manner at the respective contact regions, while the overall amo...	09/21/2010
7737036	Integrated circuit fabrication process with minimal post-laser annealing dopant deactivation Post-laser annealing dopant deactivation is minimized by performing certain low temperature process steps prior to laser annealing. ...	06/15/2010
7687399	Production of a self-aligned CuSiN barrier A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first...	03/30/2010
7622388	Methods of forming titanium-containing materials The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance,...	11/24/2009
7476617	Semiconductor device with epitaxial C49-titanium silicide (TiSi) layer and method for fabricating the same The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the pha...	01/13/2009
7416981	Method of forming metal layer used in the fabrication of semiconductor device A method of forming a metal layer on the conductive region of a semiconductor device includes concurrently supplying a mixture gas including a hydrogen gas and a metal chloride compound gas, and a purge gas into a chamber having a sealed space for a predetermined ti...	08/26/2008
7413948	Semiconductor capacitor structure and method to form same A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semico...	08/19/2008
7407881	Semiconductor device and method for manufacturing the same Enhanced step coverage and reduced resistivity of a TaSiN layer may be achieved when a semiconductor device is manufactured by: forming an interlayer insulating layer on a semiconductor substrate, the interlayer insulating layer having a contact hole that partially ...	08/05/2008
7407882	Semiconductor component having a contact structure and method of manufacture A semiconductor component having a titanium silicide contact structure and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate. An opening having sidewalls is formed in the dielectric layer ...	08/05/2008
7399702	Methods of forming silicide Methods of fully siliciding semiconductive materials of semiconductor devices are disclosed. A preferred embodiment comprises depositing an alloy comprised of a first metal and a second metal over a semiconductive material. The device is heated, causing atoms of the...	07/15/2008
7400042	Substrate with adhesive bonding metallization with diffusion barrier A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a ...	07/15/2008
7384868	Reduction of silicide formation temperature on SiGe containing substrates A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co ...	06/10/2008
7375013	Semiconductor integrated circuit device and process for manufacturing the same Formation of an WNX film 24 constituting a barrier layer of a gate electrode 7A having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNX f...	05/20/2008
7371667	Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/d...	05/13/2008
7361596	Semiconductor processing methods The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance,...	04/22/2008
7358554	Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane st...	04/15/2008
7358188	Method of forming conductive metal silicides by reaction of metal with silicon The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising an exposed elemental silicon containing surface. At least one of a ni...	04/15/2008
7354838	Technique for forming a contact insulation layer with enhanced stress transfer efficiency By removing an outer spacer, used for the formation of highly complex lateral dopant profiles, prior to the formation of metal silicide, a high degree of process compatibility with conventional processes is obtained, while at the same time a contact liner layer may ...	04/08/2008
7348230	Manufacturing method of semiconductor device A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source...	03/25/2008
7348204	Method of fabricating solid state imaging device including filling interelectrode spacings A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method i...	03/25/2008
7344978	Fabrication method of semiconductor device A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over th...	03/18/2008
7338857	Increasing adherence of dielectrics to phase change materials A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material. ...	03/04/2008
RE40114	Tungsten silicide (WSIX) deposition process for semiconductor manufacture A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the tungsten silicide f...	02/26/2008
7297630	Methods of fabricating via hole and trench A method of fabricating a via and a trench is disclosed. A disclosed method comprises: forming a via hole and a trench in a interlayer dielectric layer on a semiconductor substrate where a predetermined device is formed; depositing a thin Hf layer on the substrate; ...	11/20/2007
7297558	Method of manufacturing semiconductor device A W plug (24) is formed and a W oxidation preventing barrier metal film (25) is formed thereon. After that, an SiON film (27) thinner than the W oxidation preventing barrier metal film (25) is formed and Ar sputter etching is performed on...	11/20/2007
7285864	Stack MCP A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semic...	10/23/2007
7285493	Methods of forming a metal layer using transition metal precursors Methods for depositing a metal layer on an integrated circuit device comprising providing a transition metal precursor, carrier gas and hydrogen gas to a deposition chamber such that the partial pressure of the precursor and carrier gas exceeds about 0.25 Torr and t...	10/23/2007
7279422	Semiconductor device with silicide film and method of manufacturing the same Provided is a semiconductor device having a suicide thin film with thermal stability and a method of manufacturing the same. The semiconductor device includes a silicon substrate containing Si a gate oxide film formed on the silicon substrate, a gate electrode conta...	10/09/2007
7268041	Method of forming source contact of flash memory device The present invention relates to a method of forming a source contact of a flash memory device. According to the present invention, the method includes the steps of forming a first interlayer insulating film on a semiconductor substrate in which first junction regio...	09/11/2007
7268042	Nonvolatile semiconductor memory and making method thereof A nonvolatile semiconductor memory device of a split gate structure having a gate of low resistance suitable to the arrangement of a memory cell array is provided. When being formed of a side wall spacer, a memory gate is formed of polycrystal silicon and then repla...	09/11/2007
7268048	Methods for elimination of arsenic based defects in semiconductor devices with isolation regions Methods of preparing conductive regions such as source/drain regions for silicidation procedures, has been developed. The methods feature removal of native oxide as well as removal of deposited arsenic based defects from conductive surfaces prior to deposition of a ...	09/11/2007
7265040	Cleaning solution and method for selectively removing layer in a silicidation process A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materi...	09/04/2007
7256123	Method of forming an interface for a semiconductor device In a semiconductor device using a polysilicon contact, such as a poly plug between a transistor and a capacitor in a container cell, an interface is provided where the poly plug would otherwise contact the bottom plate of the capacitor. The interface bars silicon fr...	08/14/2007
7256125	Method of manufacturing a semiconductor device For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film s...	08/14/2007
7253108	Process for forming a thin film of TiSiN, in particular for phase change memory devices The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); e...	08/07/2007
7250356	Method for forming metal silicide regions in an integrated circuit A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heate...	07/31/2007

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Class 438/683 - Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)