Class 438/682 - Silicide

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the conductive material is formed by the
No. of patents: 806
Last issue date: 05/22/2012

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Number	Title	Issue Date
8183155	Lower profile connector assembly A connector assembly (1000) includes a first connector (100) including a first insulative housing (11), a plurality of first terminals (12) supported by the first insulative housing, each first contact having a body portion and two contac...	05/22/2012
8168538	Buried silicide structure and method for making Methods for manufacturing buried silicide lines are described herein, along with high density stacked memory structures. A method for manufacturing an integrated circuit as described herein includes forming a semiconductor body comprising silicon. A plurality of tre...	05/01/2012
8158518	Methods of making metal silicide contacts, interconnects, and/or seed layers Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices ...	04/17/2012
8158519	Method of manufacturing non-volatile memory cell using self-aligned metal silicide In a method of manufacturing a non-volatile memory cell, a self-aligned metal silicide is used in place of a conventional tungsten metal layer to form a polysilicon gate, and the self-aligned metal silicide is used as a connection layer on the polysilicon gate. By u...	04/17/2012
8105946	Method of forming conductive lines of semiconductor memory device A method of forming the conductive lines of a semiconductor memory device comprises forming a first polysilicon layer over an underlying layer, forming first polysilicon patterns by patterning the first polysilicon layer, filling the space between the first polysili...	01/31/2012
8034715	Method of fabricating semiconductor integrated circuit device A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target ha...	10/11/2011
8021982	Method of silicide formation by adding graded amount of impurity during metal deposition A method is provided for forming a metal semiconductor alloy that includes providing a deposition apparatus that includes a platinum source and a nickel source, wherein the platinum source is separate from the nickel source; positioning a substrate having a semicond...	09/20/2011
7981799	Room temperature-operating single-electron device and the fabrication method thereof The present invention relates to a room temperature-operating single-electron device and a fabrication method thereof, and more particularly, to a room temperature-operating single-electron device in which a plurality of metal silicide dots formed serially is used a...	07/19/2011
7968463	Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw ...	06/28/2011
7960283	Method for reducing silicide defects in integrated circuits A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the...	06/14/2011
7955978	Enhanced method of forming nickel silicides Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.	06/07/2011
7951712	Interconnections having double capping layer and method for forming the same Provided are an interconnection of a semiconductor device which includes a capping layer and a method for forming the interconnection. The interconnection of the semiconductor device is a copper damascene interconnection where the capping layer is formed as a dual l...	05/31/2011
7943516	Manufacturing method for semiconductor device A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and ...	05/17/2011
7935632	Reduced metal pipe formation in metal silicide contacts Formation of metal pipes resulting from formation of metal silicide contacts are reduced or avoided. To reduce formation of metal pipes, an epitaxial layer is formed over the diffusion region on which the metal silicide contact is formed. The epitaxial layer reduces...	05/03/2011
7897513	Method for forming a metal silicide The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a fi...	03/01/2011
7897514	Semiconductor contact barrier System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between...	03/01/2011
7879723	Semiconductor device manufacturing method, wiring and semiconductor device In an embodiment of the present invention, a semiconductor layer having regions into which a p-type impurity, an n-type impurity and a (p+n) impurity are respectively introduced is formed as a surface layer by being heat-treated. An impurity segregation layer on the...	02/01/2011
7879722	Semiconductor device and method of manufacturing the same A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The ...	02/01/2011
7863191	Manufacturing method of semiconductor device A first structure is formed, having a contact plug formed on the bottom of a first opening in an interlayer insulating film, a second opening formed through the interlayer insulating film to reach a semiconductor substrate, and a third opening formed through the int...	01/04/2011
7863192	Methods for full gate silicidation of metal gate structures One embodiment relates to a method of fabricating an integrated circuit. In the method, p-type polysilicon is provided over a semiconductor body, where the p-type polysilicon has a first depth as measured from a top surface of the p-type polysilicon. An n-type dopan...	01/04/2011
7858524	Method of manufacturing semiconductor device with silicide gate electrodes A semiconductor device includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a silicide gate electrode of an n-type MISFET formed on the gate insulation film; and a silicide gate electrode of a p-type MISFET formed on the ...	12/28/2010
7803707	Metal silicide nanowires and methods for their production The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) ...	09/28/2010
7790616	Encapsulated silicidation for improved SiC processing and device yield A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a silicide contact. The encapsulating layer prevents agg...	09/07/2010
7767580	Semiconductor device and method of fabricating the same A method for fabricating a semiconductor device, including forming a gate insulating layer and a gate electrode on a substrate; forming insulating layer sidewalls at sides of the gate electrode; forming source/drain regions in surface portions of the substrate that ...	08/03/2010
7763540	Method of forming a silicided gate utilizing a CMP stack A method for fabricating a semiconductor device includes forming a silicided gate utilizing a CMP stack. The CMP stack includes a first liner formed over the underlying semiconductor device and a first dielectric layer formed over the first liner layer. The first di...	07/27/2010
7749905	Vertical Fet with nanowire channels and a silicided bottom contact A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and bottom insulator plugs function as gate spacers and reduce the gate-source...	07/06/2010
7745334	Technique for locally adapting transistor characteristics by using advanced laser/flash anneal techniques By performing sophisticated anneal techniques, such as laser anneal, flash anneal and the like, for a metal silicide formation, such as nickel silicide, the risk of nickel silicide defects in sensitive device regions, such as SRAM pass gates, may be significantly re...	06/29/2010
7741220	Semiconductor device and manufacturing method thereof The present invention discloses a semiconductor device and a manufacturing method thereof which improves its characteristics even though it is miniaturized. According to one aspect of the present invention, it is provided a semiconductor device comprising a first se...	06/22/2010
7723231	Semiconductor device and method of fabricating the same A semiconductor device including silicide layers with different thicknesses corresponding to diffusion layer junction depths, and a method of fabricating the same are provided. According to one aspect, there is provided a semiconductor device comprising a first semi...	05/25/2010
7718532	Method of forming a high-k film on a semiconductor device According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric consta...	05/18/2010
7713875	Variable salicide block for resistance equalization in an array The present invention facilitates memory devices and operation of dual bit and single bit memory devices by providing systems and methods that employ a salicide block to vary and equalize the resistance of a memory array during fabrication. The present invention inc...	05/11/2010
7691751	Selective silicide formation using resist etchback Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned ...	04/06/2010
7691750	Methods of forming films in semiconductor devices with solid state reactants A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket m...	04/06/2010
7674714	Method of fabricating semiconductor devices having a gate silicide A method of fabricating a semiconductor device according to an example embodiment may include forming an isolation layer defining an active region in a semiconductor substrate, forming a silicon pattern and a sacrificial pattern on the active region, the sacrificial...	03/09/2010
7666790	Silicide gate field effect transistors and methods for fabrication thereof A method for fabricating a silicide gate field effect transistor includes masking a silicon source/drain region prior to forming the silicide gate by annealing a metal silicide forming metal layer contacting a silicon-containing gate. The silicide gate may be either...	02/23/2010
7662716	Method for forming silicide contacts Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. ...	02/16/2010
7638433	Semiconductor device and method of fabricating the same A method of fabricating a semiconductor device includes forming a preliminary gate pattern on a semiconductor substrate. The preliminary gate pattern includes a gate oxide pattern, a conductive pattern, and a sacrificial insulating pattern. The method further includ...	12/29/2009
7638432	Semiconductor device comprising metal silicide films formed to cover gate electrode and source-drain diffusion layers and method of manufacturing the same The present invention provides a semiconductor device, comprising a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and source-drain diffusion layer formed within the semicon...	12/29/2009
7622387	Gate electrode silicidation process A fully-silicided gate electrode is formed from silicon and a metal by depositing at least two layers of silicon with the metal layer therebetween. One of the silicon layers may be amorphous silicon whereas the other silicon layer may be polycrystalline silicon. The...	11/24/2009
7622386	Method for improved formation of nickel silicide contacts in semiconductor devices A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at an initial degas temperature of about 250 to about 400° C., transferring the semiconductor wafer from a degas chambe...	11/24/2009

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Class 438/682 - Silicide