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| Number | Title | Issue Date |
| 4968643 | Method for fabricating an activatable conducting link for metallic conductive wiring in a semiconductor device A conducting link is disposed in an insulating layer of a semiconductor device in combination with a plurality of wirings of the device which are electrically separated from each other. The conducting link is selectively activated to provide the wirings w... | 11/06/1990 |
| 4931323 | Thick film copper conductor patterning by laser This invention discloses a method of forming a conductor on a copper conductor on a semiconductor interconnection surface. A paste of copper material is formed over at least a portion of the semiconductor interconnection surface. A laser beam is directed ... | 06/05/1990 |
| 4931353 | Structure and method for selectively producing a conductive region on a substrate In a multi-chip module, a structure for selectively connecting two conductors. A switchable connector (36) is disposed between a first and second portion (30,32) of a copper conductor (28). The switchable connector comprises an amorphous silicon layer (58... | 06/05/1990 |
| 4920070 | Method for forming wirings for a semiconductor device by filling very narrow via holes A method for fabricating a semiconductor device with via holes, each having a width less than one micrometer and an aspect ratio more than one, assures proper filling of the via rolls with metal from a sputtered metal layer on an insulating layer having t... | 04/24/1990 |
| 4912066 | Make-link programming of semiconductor devices using laser-enhanced thermal breakdown of insulator A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the in... | 03/27/1990 |
| 4861425 | Lift-off process for terminal metals A process is described for selective removal of unwanted metallization from the surface of a semiconductor device. The process comprises the usual deposition of a configurable image defining layer on the surface of the device upon which a suitable pad lim... | 08/29/1989 |
| 4814578 | Planarization of metal films for multilevel interconnects In the fabrication of multilevel integrated circuits, each metal layer is anarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small in... | 03/21/1989 |
| 4810663 | Method of forming conductive path by low power laser pulse An integrated circuit device including a link point for electrically connecting a plurality of metal layers, comprising a first metal layer, a link insulating layer and a second metal layer. Diffusion barrier may be employed between the link insulator lay... | 03/07/1989 |
| 4808242 | Photovoltaic device and a method of manufacturing thereof A photovoltaic device includes a substrate on which a plurality of transparent electrodes for each photoelectric conversion cell are arranged. On each transparent electrode, a coupling conductor and a plurality of collecting electrodes connected to the co... | 02/28/1989 |
| 4800179 | Method for fabricating semiconductor device A method for fabricating a semiconductor device comprises forming a contact hole in an insulating film formed on a first wiring composed of an Al film, covering the insulating film with an Al film for a second wiring, applying laser beam pulses to the Al ... | 01/24/1989 |
| 4758533 | Laser planarization of nonrefractory metal during integrated circuit fabrication Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. Th... | 07/19/1988 |
| 4751197 | Make-link programming of semiconductor devices using laser enhanced thermal breakdown of insulator A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the in... | 06/14/1988 |
| 4692190 | Trimming of metal interconnection layer by selective migration of metal atoms by energy beams Semiconductor body is prepared and a film is formed on the semiconductor body, followed by forming an interconnection layer of aluminum alloy on the insulating film. A silicon oxide film is formed on the interconnection layer, followed by removing that po... | 09/08/1987 |
| 4681778 | Method and apparatus for making electrical connections utilizing a dielectric-like metal film A method and apparatus for making electrical connections between conductors on a substrate utilizes a dielectric-like metal film deposited on the substrate interconnecting the conductors to be connected. The dielectric-like film is deposited in the form o... | 07/21/1987 |
| 4674176 | Planarization of metal films for multilevel interconnects by pulsed laser heating In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small ... | 06/23/1987 |
| 4602420 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device including the steps of forming a passivation film, which has an opening exposing that region of the interlayer insulation film formed on the fuse element, which corresponds to the region to be melted of fus... | 07/29/1986 |
| 4585490 | Method of making a conductive path in multi-layer metal structures by low power laser beam An integrated circuit device including a link point for electrically connecting a plurality of metal layers, comprising a first metal layer, a link insulating layer, a second metal layer and diffusion barrier layers between the link insulator layer and ea... | 04/29/1986 |
| 4561906 | Laser activated polysilicon connections for redundancy An integrated circuit is fabricated with some redundant capacity by forming potential electrically conducting links which can subsequently be made electrically when extra circuit capacity is required. Field oxide is grown on a silicon substrate and then a... | 12/31/1985 |
| 4495255 | Laser surface alloying A very thin gold coating (e.g., 270 to 3,500 Angstroms) is vapor deposited on the surface of a nickel substrate. A short radiant energy pulse from a laser having a pulse length of about 130 nanoseconds is directed at the coated surface to melt portions of... | 01/22/1985 |
| 4393576 | Method of producing electrical contacts on a silicon solar cell A method of producing electrical contacts on a Silicon Solar Cell comprises stamping contact shapes from a carrier with a metallic film or foil adhered thereto and applying the stamped out film or foil to the silicon surface to adhere thereto while removi... | 07/19/1983 |
| 4359486 | Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation A region of a semiconductor surface intended for a metal contact is scanned with a closely packed sequence of intense laser light pulses so as to generate a disturbed surface layer and a metal layer is then applied and alloyed into the semiconductor surfa... | 11/16/1982 |
| 4351674 | Method of producing a semiconductor device A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistan... | 09/28/1982 |
| 4345967 | Method of producing thin single-crystal sheets A method of producing thin single-crystal sheets is disclosed. A thin single-crystal layer is formed on a substrate, with the material of the layer having a different absorption coefficient for laser radiation than does the material of the substrate at th... | 08/24/1982 |
| 4335362 | Semiconductor device and a method of contacting a partial region of a semiconductor surface A semiconductor device comprising, a plurality of semiconductor layers having an outer semiconductor layer, and a contact layer uniformly and entirely covering said outer semiconductive layer and having over its entire surface the same material compositio... | 06/15/1982 |
| 4261764 | Laser method for forming low-resistance ohmic contacts on semiconducting oxides This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO3 containing a p-n junction, the invention entails deposi... | 04/14/1981 |
| 4258078 | Metallization for integrated circuits The sharp features that appear on metallization patterns defined by conventional etching processes can be eliminated by instantaneous melting with short laser pulses. Flow is minimized due to the brevity of the lifetime of the molten state but surface ten... | 03/24/1981 |
