Class 438/651 - Silicide

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for forming a contact using the chemical combination
No. of patents: 152
Last issue date: 12/29/2009

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Number	Title	Issue Date
6127249	Metal silicidation methods and methods for using same A method for use in the fabrication of semiconductor devices includes forming a layer of nitridated cobalt on a surface including silicon. A film cap including titanium is formed over the layer of cobalt and a thermal treatment is performed to form cobalt...	10/03/2000
6117768	Void-free tungsten-plug contact for ULSI interconnection A doped oxide and an undoped oxide are formed on a substrate. Then, the substrate is annealed to re-flow the doped oxide layer. The doped oxide is then etched back. Next, a contact hole is created by etching. An amorphous silicon layer is formed on the su...	09/12/2000
6096639	Method of forming a local interconnect by conductive layer patterning A local interconnect (LI) structure is formed by forming a silicide layer in selected regions of a semiconductor structure then depositing an essentially uniform layer of transition or refractory metal overlying the semiconductor structure. The metal loca...	08/01/2000
6060387	Transistor fabrication process in which a contact metallization is formed with different silicide thickness over gate interconnect material and transistor source/drain regions A new process for creating a transistor in an integrated circuit provides for two suicide formations, each independent of the other, from two metal depositions and formations steps. The process produces a sufficiently low resistance silicide layer over th...	05/09/2000
6060379	Method of forming dual damascene structure A method of forming a dual damascene structure comprises the steps of providing a substrate having a first conductive layer formed thereon, and then sequentially forming a first dielectric layer, an anti-reflection layer and a second dielectric layer over...	05/09/2000
6054385	Elevated local interconnect and contact structure A semiconductor process in which a local interconnect, formed above a first transistor level, is connected to the first transistor level through a self-aligned and low resistivity contact structure. A semiconductor substrate is provided and a first transi...	04/25/2000
6037254	Method of making a surface protective layer for improved silicide formation Method of fabricating a narrow linewidth transistor having a low sheet resistance. The transistor may be fabricated in a surface of a semiconductor layer (12). A gate body (14) may be formed separated from an outer surface (16) of the semiconductor layer ...	03/14/2000
6008124	Semiconductor device having improved lamination-structure reliability for buried layers, silicide films and metal films, and a method for forming the same After formation of a connection hole or before deposition of an insulator film, a semiconductor device is placed onto a cathode of a plasma generator. A surface of a metal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-c...	12/28/1999
5998286	Method to grow self-aligned silicon on a poly-gate, source and drain region The method of the present invention includes forming a MOS on a semiconductor substrate. Subsequently, a silicon-rich metal silicide layer is deposited on the MOS and substrate by using chemical vapor deposition to act as a silicon material source. Then, ...	12/07/1999
5981387	Method for forming silicide film in semiconductor device Disclosed is a method for forming a silicide film on bit lines or word lines in a semiconductor device. The method includes the steps of: placing a substrate within a reacting chamber, the substrate having an objective layer on which a metal silicide film...	11/09/1999
5972790	Method for forming salicides Titanium is deposited onto a semiconductor interconnect to form a salicide structure by plasma-enhanced chemical vapor deposition. The reactant gases, including titanium tetrachloride, hydrogen and optionally argon, are combined. A plasma is created using...	10/26/1999
5970379	Method of reducing loss of metal silicide in pre-metal etching A method of reducing the loss of metal silicide in pre-metal etching which includes the following steps. A polysilicon gate electrode and implanted source/drain electrodes are formed on a silicon substrate. A metal silicide layer is formed on the polysili...	10/19/1999
5960319	Fabrication method for a semiconductor device A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen at...	09/28/1999
5956611	Field emission displays with reduced light leakage Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicide...	09/21/1999
5956584	Method of making self-aligned silicide CMOS transistors The present invention includes forming gate structures having a nitride cap on the substrate. An ion implantation is used to dope ions into the substrate to form the lightly doped drain (LDD) structures. An oxide layer is formed on the gate structures. Su...	09/21/1999
5924009	Titanium silicide interconnect method A technology of forming a semiconductor integrated device is disclosed. According to the technology, titanium silicide is formed from an interaction between a source of TiCl2 transformed from TiCl4, and a source of hydrogen containin...	07/13/1999
5877085	Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device, a silicide layer of a refractory metal is formed in a predetermined region of a semiconductor element formed on a silicon semiconductor substrate. In the first film formation step, a first thin film con...	03/02/1999
5840626	Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device comprises the steps of forming a first metal film including a first metal on a surface of a silicon film by sputtering using a gas mixture added with a nitrogen gas, the first metal being one of nickel and ...	11/24/1998
5824600	Method for forming a silicide layer in a semiconductor device A method for forming a silicide layer in a semiconductor device, including the steps of: forming a refractory metal layer on a semiconductor substrate; forming a cobalt layer on the refractory metal layer; implanting impurities in the interface between th...	10/20/1998
5783486	Bridge-free self aligned silicide process A method of forming a transistor having silicide contacts to the gate and source/drain regions. A semiconductor substrate is provided having spaced field oxide regions and active areas. On the active areas, a gate structure is formed having a gate oxide, ...	07/21/1998
5736461	Self-aligned cobalt silicide on MOS integrated circuits A method of forming cobalt silicide on source/drain regions and polysilicon gate areas of an MOS integrated circuit uses an improved technique to prevent unwanted oxidation of cobalt or growth of silicide on other areas of device. A thin titanium nitride ...	04/07/1998
5700722	Process for forming silicide plugs in semiconductor devices A process for forming a uniform silicide plug inside an opening in a semiconductor to form fine contacts is disclosed wherein a silicon based material which is inserted into a hole formed in a substrate is reacted with a metal layer to form the contacts....	12/23/1997
5677217	Method for fabricating a mosfet device, with local channel doping and a titanium silicide gate A process has been developed in which a deep submicron MOSFET device has been fabricated, featuring a local, narrow threshold voltage adjust region, in a semiconductor substrate, with the narrow threshold voltage adjust region, self aligned to an overlyin...	10/14/1997
5483741	Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice A method for forming a self-limiting, silicon based interconnect for making temporary electrical contact with bond pads on a semiconductor die is provided. The interconnect includes a silicon substrate having an array of contact members adapted to contact...	01/16/1996
5482895	Method of manufacturing semiconductor devices having silicide electrodes A method of manufacturing a semiconductor substrate with a silicide electrode (interconnection) capable of forming a local interconnection by using a silicide formation technique. The method includes the steps of: selectively oxidizing the surface of a si...	01/09/1996
5447887	Method for capping copper in semiconductor devices A silicon nitride layer (34) has improved adhesion to underlying copper interconnect members (30) through the incorporation of an intervening copper silicide layer (32). Layer (32) is formed in-situ with a plasma enhanced chemical vapor deposition (PECVD)...	09/05/1995
5401677	Method of metal silicide formation in integrated circuit devices An improved process for the formation of high quality, high yield platinum silicides on silicon wafers uses a post sputter platinum deposition and high vacuum bake to complete the first step of silicide reaction, resulting in Pt2 Si formation b...	03/28/1995
5041394	Method for forming protective barrier on silicided regions The described embodiments of the present invention provide a protective layer on the surface of silicided regions and methods for its formation. In the primary described embodiment, a titanium silicide layer is formed in integrated circuitry using self-al...	08/20/1991
4568411	Metal/semiconductor deposition Metal is deposited by bias sputtering over a two-layer photoresist mask, the lower layer having a thickness at least 1.5 times the metal thickness and the second layer having an edge overhang in excess of 0.1 μm, and unwanted metal removed by lift-off....	02/04/1986
4566026	Integrated circuit bimetal layer Disclosed is a bimetal layer located between two portions of an integrated circuit, the bimetal layer comprising a layer of TiWN and a layer of TiN....	01/21/1986
4528744	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device which comprises the steps of forming an interconnection layer through an insulating film on a semiconductor substrate, and connecting the diffusion interconnection region in the surface portion of said subs...	07/16/1985
4228212	Composite conductive structures in integrated circuits A composite conductive structure in integrated circuit devices is described. The composite conductive structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide. A layer...	10/14/1980

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Class 438/651 - Silicide