Class 438/641 - Selective deposition

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein a material is deposited selectively upon
No. of patents: 194
Last issue date: 12/08/2009

«First «Previous 1 2 3 4 5 Next»Last»

Number	Title	Issue Date
5053349	Method for interconnecting semiconductor devices There is disclosed a method for the production of semiconductor devices, which has a process for forming an active region and isolation region on a semiconductor substrate, a gate dioxide layer on both active and isolating regions, and a gate electrode on...	10/01/1991
5043290	Process for forming electrodes for semiconductor devices by focused ion beam technology A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically condu...	08/27/1991
5006484	Making a semiconductor device with contact holes having different depths In a process of fabrication of a semiconductor device having a relatively deep contact hole and a relatively shallow contact hole; a lower interlayer insulating layer is formed on a semiconductor substrate, and then subjected to heat treatment to flow; an...	04/09/1991
4987099	Method for selectively filling contacts or vias or various depths with CVD tungsten A method of making planarized metallization on a semiconductor substrate employing selective deposition....	01/22/1991
4983543	Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit A method of manufacturing a semiconductor integrated circuit comprises steps of forming at least one semiconductor device on a substrate, depositing an insulator layer on the substrate so as to bury the semiconductor device, providing a contact hole throu...	01/08/1991
4980034	High-density, multi-level interconnects, flex circuits, and tape for TAB A multi-layer interconnect structure of alternating dielectric (e.g., polyimide) and metal (e.g., copper) is built on a substrate supporting a continuous layer of metal. This metal layer is used as an electrode for plating vias through all the dielectric ...	12/25/1990
4966864	Contact structure and method A semiconductor device structure including a contact and a method for its fabrication are disclosed. In accordance with one embodiment of the disclosure, a contact is formed between a monocrystalline silicon substrate and an overlying silicon layer. A sil...	10/30/1990
4963510	Method and apparatus for providing interconnection between metallization layers on semiconductors devices A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18) is then applied and a c...	10/16/1990
4963512	Method for forming conductor layers and method for fabricating multilayer substrates A method for forming conductor layers of substrates for mounting LSIs and the like and a fabrication method of multilayer substrates are disclosed. These methods comprise steps of forming a metal underlayer having a shape similar to that of a conductor pa...	10/16/1990
4962059	Process for forming electrodes for semiconductor devices using focused ion beam deposition A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically condu...	10/09/1990
4961822	Fully recessed interconnection scheme with titanium-tungsten and selective CVD tungsten A method of fabricating higher-order metal interconnection layers in a multi-level metal semiconductor device. The semiconductor device has at least one metal layer, an oxide layer disposed on the metal layer, and a metal plug disposed in the oxide layer ...	10/09/1990
4948755	Method of manufacturing self-aligned conformal metallization of semiconductor wafer by selective metal deposition A method is disclosed for fabricating a semiconductor integrated circuit which includes the selective deposition of a metal, such as tungsten, into a contact opening formed in a dielectric layer, followed by the deposition of a thin silicon layer over the...	08/14/1990
4948749	Process for forming electrodes for semiconductor devices A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically condu...	08/14/1990
4948756	Method of making interconnects between polysilicon layers Disclosed is a process for making a semiconductor device which has two polycrystalline layers (5) and (15) isolated by insulation films. Openings are made utilizing a single photoresist mask by etching the polycrystalline silicon layer and the underlying ...	08/14/1990
4933297	Method for etching windows having different depths Overetching of gate runners, which may be silicided, during window etching is prevented by opening windows in the dielectric to expose the top of the silicide layer on the runners and then depositing a metal, such as tungsten, which has a high etch select...	06/12/1990
4920403	Selective tungsten interconnection for yield enhancement Methods of fabricating metal interconnection lines in an integrated circuit. In general, one method comprises the steps of depositing a layer of metal on an inter-dielectric oxide layer. The layer of metal is patterned and etched to form metal interconnec...	04/24/1990
4906593	Method of producing a contact plug A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the windo...	03/06/1990
4900695	Semiconductor integrated circuit device and process for producing the same The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. T...	02/13/1990
4897150	Method of direct write desposition of a conductor on a semiconductor An improved method of patterning a conductive interconnect on a semiconductor element is disclosed. A catalytic layer of, for example, amorphous silicon is deposited on a semiconductor element. The areas over which a conductive pattern is to be formed is ...	01/30/1990
4869926	Method of production galvanically deposited aluminum layers for use as contacts of microcircuits Contacts of microcircuits are produced by galvanically depositing aluminum layers on a substrate carrying a microcircuit....	09/26/1989
4868068	IC wiring connecting method and resulting article A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connec...	09/19/1989
4866009	Multilayer wiring technique for a semiconductor device A method of manufacturing a semiconductor device includes the steps of (a) forming a first conductive pattern on a semiconductor substrate, (b) forming a first interlayer insulating film, covering the first conductive pattern, (c) forming a second conduct...	09/12/1989
4866008	Methods for forming self-aligned conductive pillars on interconnects Methods, of forming a self-aligned conductive pillar (16) on an interconnect (12) on a body (10) having semiconducting surfaces. A first mask (24) defines an inverse pattern for formation of an interconnect (12). The interconnect (12) is formed by additiv...	09/12/1989
4853341	Process for forming electrodes for semiconductor devices using focused ion beams A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically cond...	08/01/1989
4851369	Method of establishing a structure of electrical interconnections on a silicon semiconductor device After having formed contact islands (20) comprising at least one layer of silicide (20) of titanium or cobalt, these islands are covered by a complementary metallic layer (30) obtained by selective growth of tungsten or molybdenum, which is localized at t...	07/25/1989
4764484	Method for fabricating self-aligned, conformal metallization of semiconductor wafer A method is disclosed for fabricating a VLSI multilevel metallization integrated circuit in which a first dielectric layer (10), a thin silicon layer (16), and then a second dielectric layer (18) are deposited on the upper surface of a substrate. A trench...	08/16/1988
4746621	Planar tungsten interconnect A planar interconnect using selective deposition of a refractory metal such as tungsten into oxide channels is disclosed. A layer of silicon dioxide as thick as the desired tungsten interconnect is placed on the surface of a substrate such as an integrate...	05/24/1988
4670967	Forming multilayer interconnections for a semiconductor device by vapor phase growth process A method of forming a multilayer interconnection for a semiconductor device comprising a first insulation layer deposited on a substrate having semiconductor elements, first interconnection patterns, a second insulation layer interposed between the first ...	06/09/1987
4582563	Process for forming multi-layer interconnections First conductive members are buried in first holes formed in a first insulating film to connect the second interconnection layers, formed through first and second insulating films, to a semiconductor substrate. Second conductive members are buried in seco...	04/15/1986
4574095	Selective deposition of copper A process for selectively depositing copper by first selectively depositing palladium seeds by irradiating a palladium compound with light. Following the deposition of the palladium seeds, copper is deposited by an electroless process....	03/04/1986
4517225	Method for manufacturing an electrical interconnection by selective tungsten deposition A structure for an electrical interconnection suitable for a semiconductor integrated circuit is made by a process utilizing selective tungsten deposition at low pressure to form an intermediate conductive layer without significantly ablating nearby insul...	05/14/1985
4150177	Method for selectively nickeling a layer of polymerized polyester resin A method of selectively nickeling a layer of polymerized polyester resin is described. Patterns of electrically conducting nickel are produced on the resin surface by etching the surface of the resin prior to covering the etched surface with a patterned l...	04/17/1979
4087314	Bonding pedestals for semiconductor devices A metallization system and process for forming bonding pedestals suitable for subsequent gang-bonding of multileaded semiconductor devices. The metallurgical components are selected for corrosion resistance and permit the use of selective etchants for yie...	05/02/1978

«First «Previous 1 2 3 4 5 Next»Last»

PatentStorm

Famous Patents

PatentStorm News

Class 438/641 - Selective deposition