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Class 438/626 - Planarization


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein at least one of the metallization levels
No. of patents: 735
Last issue date: 03/06/2012


                    19  
NumberTitleIssue Date
4917759Method for forming self-aligned vias in multi-level metal integrated circuits
A process for forming a via in a semiconductor device using a self-aligned metal pillar to connect metal layers separated by a dielectric. A first aluminum layer is formed on an oxide layer overlying a semiconductor substrate, and a thin tungsten layer is...
04/17/1990
4879257Planarization process
A method for forming a multilayer integrated circuit is described wherein the resultant top surface thereof is substantially planar. The method involves first forming a layer of connecting metallization on integrated circuit components formed in a convent...
11/07/1989
4824521Planarization of metal pillars on uneven substrates
A method for forming vertical metal interconnects on a semiconductor substrate having an uneven surface comprises first forming a laminated metal structure over the entire substrate. The laminated metal structure includes a first metallization sublayer, a...
04/25/1989
4800176Method for forming contact portion in semiconductor integrated circuit devices
A method of manufacturing semiconductor devices according to the present invention includes the steps of forming an element isolation region on the main surface of a semiconductor substrate of a first conductivity type, forming a high impurity concentrati...
01/24/1989
4795722Method for planarization of a semiconductor device prior to metallization
A method for planarizing a semiconductor slice prior to its metallization is disclosed. The semiconductor slice is processed so as to form the diffusions and underlying interconnection layers using well known techniques. After the deposition and patternin...
01/03/1989
4758306Stud formation method optimizing insulator gap-fill and metal hole-fill
A method of forming a conductive structure on a substrate by using both of the via-filling and stud-forming metallization techniques. A stud that is approximately one-half the thickness of the final stud is defined on a conductive layer. The stud-forming ...
07/19/1988
4753709Method for etching contact vias in a semiconductor device
A method for forming contact vias in order to make electrical connection between conductive interconnection layers is disclosed. The semiconductor slice is processed so as to form the diffusions and underlying interconnection layers using well known techn...
06/28/1988
4710398Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device. An insulation film having an opening is formed on a semiconductor substrate. The opening is filled with an electrically conductive material so as to substantially flatten the top surface of the opening fil...
12/01/1987
4674176Planarization of metal films for multilevel interconnects by pulsed laser heating
In the fabrication of multilevel integrated circuits, each metal layer is planarized by heating to momentarily melt the layer. The layer is melted by sweeping laser pulses of suitable width, typically about 1 microsecond duration, over the layer in small ...
06/23/1987
4670091Process for forming vias on integrated circuits
In a process of forming vias for multilevel interconnects used in integrated circuits, a layer of a first metal is formed on a semiconductor substrate. A layer of a second metal is formed on the first metal layer. The second metal layer is etched in a pre...
06/02/1987
4614021Pillar via process
An improved means and method is described for providing a conductive pillar in a via between multiple layers of conductors on planar electronic structures such as integrated circuits. A lower first conductor layer is formed on the device substrate and cov...
09/30/1986
4541893Process for fabricating pedestal interconnections between conductive layers in an integrated circuit
A process for fabricating pedestal interconnections between conductive layers in an integrated circuit includes the steps of (a) forming a first conductive layer over a semiconductor substrate; (b) applying a stop etch layer to said first conductive layer...
09/17/1985
4541169Method for making studs for interconnecting metallization layers at different levels in a semiconductor chip
Disclosed herein is a method enabling the use of four or more levels of metal over silicon chips whereby increased wiring density, reduced wiring capacitances and improved interconnection reliability are achieved. Stud vertical wiring and special etching ...
09/17/1985
4396458Method for forming planar metal/insulator structures
Formation of planar conductor/insulator semiconductor devices utilizing hafnium coated aluminum based metallization with a magnesium oxide mask for dry etching of the metallization and deposition of planar insulation. The hafnium coating is used to protect the...
08/02/1983
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