Bizarre Patents
A gun that fires a missile, powered by gas "discharged by the operator of the toy."
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8183149 | Method of fabricating a conductive interconnect arrangement for a semiconductor device A method of fabricating a semiconductor device is provided. The method begins by providing a semiconductor device structure having electronic devices formed on a semiconductor substrate, and having an upper metal layer associated with electrical contacts for the ele... | 05/22/2012 |
| 8124523 | Fabrication method of a semiconductor device and a semiconductor device A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a m... | 02/28/2012 |
| 8119518 | Noble metal barrier for fluorine-doped carbon films A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 and smaller than 2, the F/C ratio being defined as ... | 02/21/2012 |
| 8119517 | Chemical mechanical polishing method and method of manufacturing semiconductor device A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer. ... | 02/21/2012 |
| 8088686 | Method of remedying deterioration of insulating film The present invention provides a method of remedying deterioration of an insulating film which, during the remedial treatment of an insulating film deteriorated by plasma treatment, does not leave residual remedial agent on the wiring material such as the copper wir... | 01/03/2012 |
| 8084355 | Methods of forming copper-comprising conductive lines in the fabrication of integrated circuitry A method of forming copper-comprising conductive lines in the fabrication of integrated circuitry includes depositing damascene material over a substrate. Line trenches are formed into the damascene material. Copper-comprising material is electrochemically deposited... | 12/27/2011 |
| 8021975 | Plasma processing method for forming a film and an electronic component manufactured by the method A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting ... | 09/20/2011 |
| 8008186 | Semiconductor device and method of fabricating the same A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a wiring formed in predetermined pattern above the semiconductor substrate, a first insulating film lying right under the wiring, and a second insulating f... | 08/30/2011 |
| 7998856 | Interconnects with a dielectric sealant layer Leakage, capacitance and reliability degradation of interconnects fabricated in low-k dielectric materials, particularly porous low-k dielectric material, due to penetration by a barrier metal and/or barrier metal precursor during damascene processing is prevented b... | 08/16/2011 |
| 7932175 | Method to form a via A method for forming a via, comprising (a) providing a structure comprising a mask (210) disposed on a semiconductor substrate (203), wherein the structure has an opening (215) defined therein which extends through the mask and into the substrat... | 04/26/2011 |
| 7923366 | Post passivation interconnection schemes on top of IC chip A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over... | 04/12/2011 |
| 7915159 | Treating agent materials A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylatio... | 03/29/2011 |
| 7910475 | Method for forming low dielectric constant fluorine-doped layers A method for forming a semiconductor device is provided. In one embodiment, the method includes providing a semiconductor substrate with a surface region. The surface region includes one or more layers overlying the semiconductor substrate. In addition, the method i... | 03/22/2011 |
| 7897504 | Method for fabricating semiconductor device A method for fabricating a semiconductor device, in which a lifting phenomenon can be prevented from occurring in forming an amorphous carbon film on an etched layer having tensile stress. According to the invention, since a compression stress on the etched layer or... | 03/01/2011 |
| 7875549 | Fluorine doped carbon films produced by modification by radicals A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 smaller than 2, the F/C ratio being defined as a ra... | 01/25/2011 |
| 7871925 | Stack package and method for manufacturing the same A stack package comprises a substrate having a circuit pattern; at least two semiconductor chips stacked on the substrate, having a plurality of through-via interconnection plugs and a plurality of guard rings which surround the respective through-via interconnectio... | 01/18/2011 |
| 7803705 | Manufacturing method of semiconductor device and film deposition system A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a... | 09/28/2010 |
| 7799673 | Semiconductor device manufacturing method A semiconductor device manufacturing method includes: forming a via pattern in an insulating film by use of an alignment mark of a lower wiring line; forming, by use of an alignment mark of the via pattern, an upper wiring groove pattern in an upper insulating film ... | 09/21/2010 |
| 7737023 | Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric... | 06/15/2010 |
| 7723227 | Methods of forming copper-comprising conductive lines in the fabrication of integrated circuitry A method of forming copper-comprising conductive lines in the fabrication of integrated circuitry includes depositing damascene material over a substrate. Line trenches are formed into the damascene material. Copper-comprising material is electrochemically deposited... | 05/25/2010 |
| 7713863 | Method for manufacturing a semiconductor device and method for etching the same A method for manufacturing a dual damascene structure includes forming a wiring layer over a substrate, forming an inorganic insulating film over the wiring layer, forming a via hole in the inorganic insulating film using a first resist pattern with an opening as an... | 05/11/2010 |
| 7709371 | Repairing damage to low-k dielectric materials using silylating agents A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stabl... | 05/04/2010 |
| 7674705 | Method of forming a semiconductor device A method of forming a semiconductor device. A first wiring level is formed on a top surface of a substrate. The first wiring level includes alternating layers of a first dielectric material and a second dielectric material. The layers of the first dielectric materia... | 03/09/2010 |
| 7625818 | Method for forming vias in a substrate The present invention relates to a method for forming vias in a substrate, comprising the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a photo resist layer on the first surface of the substrate; (c) forming a pa... | 12/01/2009 |
| 7592249 | Method for manufacturing a semiconductor device A highly reliable method for forming contact plugs is provided. The method can prevent short circuiting from occurring between self aligned contact plugs and word lines or between self aligned contact plugs and bit lines by applying a material, whose etching speed r... | 09/22/2009 |
| 7582555 | CVD flowable gap fill The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Rea... | 09/01/2009 |
| 7563707 | Laser process for reliable and low-resistance electrical contacts Disclosed is a method for manufacturing an organic optoelectronic device. The method comprises providing a substrate, disposing a first electrode on the substrate, disposing a metal pad on the substrate, electrically separated from the first electrode, disposing a f... | 07/21/2009 |
| 7563706 | Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent. ... | 07/21/2009 |
| 7560377 | Plasma processes for depositing low dielectric constant films A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilic... | 07/14/2009 |
| 7534717 | Method of manufacturing semiconductor device The formation of an interlayer insulating film above a substrate, the formation of an insulating film of an organic material on the interlayer insulating film thereafter, and the irradiation of the insulating film of an organic material and the interlayer insulating... | 05/19/2009 |
| 7534718 | Post passivation interconnection schemes on top of IC chips A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over... | 05/19/2009 |
| 7521354 | Low k interlevel dielectric layer fabrication methods A low k interlevel dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide comprising interlevel dielectric layer comprising carbon and having a dielectric constant no greater than 3.... | 04/21/2009 |
| 7521353 | Method for reducing dielectric overetch when making contact to conductive features In a first preferred embodiment of the present invention, conductive features are formed on a first dielectric etch stop layer, and a second dielectric material is deposited over and between the conductive features. A via etch to the conductive features which is sel... | 04/21/2009 |
| 7501339 | Methods for making dual-damascene dielectric structures A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and formi... | 03/10/2009 |
| 7476609 | Forming of a cavity in an insulating layer A method for forming, by dry etch, an opening of a given shape in a silica glass layer, the layer having a doping profile similar to the shape and the etch plasma being a non-carbonated fluorinated plasma causing a non-directional etching. ... | 01/13/2009 |
| 7470610 | Method of fabricating organic electroluminescent devices A method of fabricating an organic EL device by which sealing films can be patterned, without using any wet process. The method has the steps of: preparing a substrate 1 on which a first electrode 2 has been formed an... | 12/30/2008 |
| 7449408 | Method for manufacturing semiconductor device It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated st... | 11/11/2008 |
| 7446031 | Post passivation interconnection schemes on top of IC chips A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over... | 11/04/2008 |
| 7446030 | Methods for fabricating current-carrying structures using voltage switchable dielectric materials A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and f... | 11/04/2008 |
| 7442573 | Scaffold-organized clusters and electronic devices made using such clusters A method for forming arrays of metal, alloy, semiconductor or magnetic clusters is described. The method comprises placing a scaffold on a substrate, the scaffold comprising, for example, polynucleotides and/or polypeptides, and coupling the clusters to the scaffold... | 10/28/2008 |
