Did You Know...
...that to encourage use of his new invention, the shopping cart, market owner Sylvan Goldman hired fake shoppers to push the carts around his store in Oklahoma City? Seems his customers were reluctant to give up their hand-carried baskets.
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| Number | Title | Issue Date |
| 8183147 | Method of fabricating a conductive post on an electrode A method of fabricating a semiconductor device includes: forming a semiconductor chip portion having an electrode on a main surface of a wafer; forming a first resist pattern having a first opening on the electrode; filling the first opening with a first electricall... | 05/22/2012 |
| 8101515 | Methods of manufacturing semiconductor devices having contact plugs in insulation layers Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second con... | 01/24/2012 |
| 8071473 | Semiconductor device manufacturing method and storage medium An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate. A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-co... | 12/06/2011 |
| 8030203 | Method of forming metal line of semiconductor device A semiconductor device and a method of forming a metal line of a semiconductor device includes a first insulating layer formed over a semiconductor substrate an etch-stop layer formed over the first insulating layer, contact holes formed by etching the etch-stop lay... | 10/04/2011 |
| 7915158 | Method for forming an on-chip high frequency electro-static discharge device A method for forming an on-chip high frequency electro-static discharge device is described. In one embodiment, a wafer with a multi-metal level wiring is provided. The wafer includes a first dielectric layer with more than one electrode formed therein, a second die... | 03/29/2011 |
| 7851349 | Method for producing a connection electrode for two semiconductor zones arranged one above another A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconducto... | 12/14/2010 |
| 7807565 | Method of forming bit line of flash memory device A method for forming a semiconductor device includes forming drain contact holes in a first interlayer insulating layer provided over a semiconductor substrate. First metal material is formed over the first interlayer insulating layer and fills the drain contact hol... | 10/05/2010 |
| 7741212 | Semiconductor device and method for manufacturing the same A semiconductor device and method for manufacturing the same are provided, capable of narrowing feature size by utilizing the property of oxidation of a material. In one method, a polysilicon layer can be patterned into a fine pattern up to a critical dimension usin... | 06/22/2010 |
| 7732323 | Methods of manufacturing semiconductor devices having contact plugs in insulation layers Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second con... | 06/08/2010 |
| 7709369 | Method for forming a roughened contact in a semiconductor device A method for forming a contact in a semiconductor device includes opening a contact hole exposing a surface of a substrate, performing a first post treatment to form a rough portion at a bottom surface of the contact hole, and performing a second post treatment. The... | 05/04/2010 |
| 7704871 | Integration of thin film resistors having different TCRs into single die An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer (2) formed on a semiconductor substrate (1), a first thin film resistor (3) disposed on the first oxi... | 04/27/2010 |
| 7662710 | Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane Providing through-wafer interconnections in a semiconductor wafer includes forming a sacrificial membrane in a pre-existing semiconductor wafer, depositing metallization over one side of the wafer so as to cover exposed portions of the sacrificial membrane facing th... | 02/16/2010 |
| 7662709 | Surface mounting method An improved surface mounting method applied in a semiconductor package process is provided, wherein the method comprises the following steps: First a substrate having at least one pad set on one surface of the substrate is provided. Then a mask having at least one o... | 02/16/2010 |
| 7622378 | Multi-step system and method for curing a dielectric film A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying syst... | 11/24/2009 |
| 7601630 | Semiconductor device and method for fabricating the same A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a semiconductor memory device according to the invention includes forming an in... | 10/13/2009 |
| 7553754 | Electronic device, method of manufacture of the same, and sputtering target In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film ... | 06/30/2009 |
| 7531445 | Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane Providing through-wafer interconnections in a semiconductor wafer includes forming a sacrificial membrane in a pre-existing semiconductor wafer, depositing metallization over one side of the wafer so as to cover exposed portions of the sacrificial membrane facing th... | 05/12/2009 |
| 7510960 | Bridge for semiconductor internal node A method and apparatus for forming connections within a semiconductor device is disclosed. The semiconductor device incorporates a contact bridge between transistor contacts in close proximity. The contact bridge comprises a plurality of metal pillars each having a ... | 03/31/2009 |
| 7473631 | Method of forming contact holes in a semiconductor device having first and second metal layers An exemplary method of forming a contact hole in a semiconductor device includes: forming a first insulation layer on a lower substrate; forming a first conductive layer on the first insulation layer; forming a second insulation layer on the first insulation layer a... | 01/06/2009 |
| 7439173 | Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a conductive line connected to at least one functional via, and at least one dum... | 10/21/2008 |
| 7405151 | Method for forming a semiconductor device A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20... | 07/29/2008 |
| 7396751 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask... | 07/08/2008 |
| 7393773 | Method and apparatus for producing co-planar bonding pads on a substrate A method and apparatus for producing a substrate having a plurality of substantially co-planar bonding pads is provided. The substrate is employed in a probe apparatus used in wafer testing of wafer-mounted semiconductor integrated circuits. The bonding pads are for... | 07/01/2008 |
| 7390741 | Method for fabricating semiconductor device A method for fabricating a semiconductor device comprises the steps of: forming interconnection grooves 38 in an inter-layer insulation film 34; forming an interconnection layer 44 of Cu as the main material in the interconnection grooves 38 | 06/24/2008 |
| 7378330 | Cleaving process to fabricate multilayered substrates using low implantation doses A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of ... | 05/27/2008 |
| 7378339 | Barrier for use in 3-D integration of circuits A method for forming a semiconductor device includes providing a first integrated circuit having a landing pad and attaching a second integrated circuit to the first integrated circuit using at least one bonding layer. The second integrated circuit has an inter-circ... | 05/27/2008 |
| 7365384 | Trench buried bit line memory devices and methods thereof A memory device includes isolation trenches that are formed generally parallel to and along associated strips of active area. A conductive bit line is recessed within each isolation trench such that the uppermost surface of the bit line is recessed below the uppermo... | 04/29/2008 |
| 7365004 | Method for manufacturing semiconductor device The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The const... | 04/29/2008 |
| 7354851 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is described. The method includes providing a substrate having a trench therein, and a trench device in the trench. The trench device includes two gate structures disposed on the sidewalls of the trench, a doped region... | 04/08/2008 |
| 7354852 | Method of forming interconnection in semiconductor device A multilayer interconnection structure is formed by a method comprising the steps of: Forming a low dielectric constant film on a substrate, curing the low dielectric constant film by irradiating it with UV light, laminating a UV blocking film, laminating a next low... | 04/08/2008 |
| 7348279 | Method of making an integrated circuit, including forming a contact In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a photoresist layer which is exposed using two masks, with the first mas... | 03/25/2008 |
| 7348280 | Method for fabricating and BEOL interconnect structures with simultaneous formation of high-k and low-k dielectric regions A method for fabricating and back-end-of-line (BEOL) metalization structures includes simultaneous high-k and low-k dielectric regions. An interconnect structure includes a first inter-level dielectric (ILD) layer and a second ILD layer with the first ILD layer unde... | 03/25/2008 |
| 7339223 | Semiconductor devices having dual capping layer patterns and methods of manufacturing the same Some embodiments provide a semiconductor substrate having a cell array region and a peripheral circuit region. A plurality of word line patterns are placed in the cell array region, each of which include a word line and a word line capping layer pattern stacked ther... | 03/04/2008 |
| 7335517 | Multichip semiconductor device, chip therefor and method of formation thereof A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the c... | 02/26/2008 |
| 7326642 | Method of fabricating semiconductor device using low dielectric constant material film The semiconductor device is capable of coping with speedup of operation using a low dielectric constant material film other than silicon. The base (10) formed by the substrate (11) and the low dielectric constant material film (12) whose relativ... | 02/05/2008 |
| 7316971 | Wire bond pads A wire bond pad and method of fabricating the wire bond pad. The method including: providing a substrate; forming an electrically conductive layer on a top surface of the substrate; patterning the conductive layer into a plurality of wire bond pads spaced apart; and... | 01/08/2008 |
| 7312107 | Semiconductor device and manufacturing method thereof A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area o... | 12/25/2007 |
| 7312145 | Electronic member, method for making the same, and semiconductor device The present invention provides an electronic device having high insulating reliability, in which metal portions of a circuit are not electrically conductive with each other via an adhesive layer even when the electronic device is used in high-temperature low-humidit... | 12/25/2007 |
| 7307012 | Post vertical interconnects formed with silicide etch stop and method of making A method to form a vertical interconnect advantageous for high-density semiconductor devices. A conductive etch stop layer, preferably of cobalt silicide, is formed. The etch stop layer may be in the form of patterned lines or wires. A layer of contact material is f... | 12/11/2007 |
| 7301236 | Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via An integrated circuit with increased electromigration lifetime and allowable current density and methods of forming same are disclosed. In one embodiment, an integrated circuit includes a conductive line connected to at least one functional via, and at least one dum... | 11/27/2007 |
