Cloaking System Using Optoelectronically Controlled Camouflage
A Cloaking System designed to operate in the visible light spectrum, utilizes optoelectronics and/or photonic components to conceal an object within it.
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| Number | Title | Issue Date |
| 8093147 | Device structure of carbon fibers and manufacturing method thereof An aggregate structure of carbon fibers, organized by a plurality of carbon fibers, includes, an aggregate of the carbon fibers aligned in a lengthwise direction, in which a density of the carbon fibers at one side end is different from a density of the carbon fiber... | 01/10/2012 |
| 8067305 | Electrically conductive structure on a semiconductor substrate formed from printing Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate, e.g., a semiconductor wafer. Typically, the particulate matter is deposited in a layer-by-layer manner and ad... | 11/29/2011 |
| 7842596 | Method for formation of high quality back contact with screen-printed local back surface field A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer... | 11/30/2010 |
| 7790594 | Electronic part and method of producing the same It is an object of the invention to provide an electronic part capable of forming an accurate gap between opposing substrates while also capable of decreasing the area of the electronic part, and a method of producing the same. A second electrode portion (6),... | 09/07/2010 |
| 7625814 | Filling deep features with conductors in semiconductor manufacturing A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conducti... | 12/01/2009 |
| 7504331 | Method of fabricating self-assembled electrical interconnections A method of forming a self-assembled interconnect structure is described. In the method, a contact pad surface and particles in a solution are brought together. The particles are selected such that they the particles adhere to the contact pad surface. Formation of a... | 03/17/2009 |
| 7485561 | Filling deep features with conductors in semiconductor manufacturing A method of filling a conductive material in a three dimensional integration structure feature formed on a surface of a wafer is disclosed. The feature is filled with a dispersion containing a plurality of conductive particles and a solvent. Then, the solvent is rem... | 02/03/2009 |
| 7393771 | Method for mounting an electronic part on a substrate using a liquid containing metal particles An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electr... | 07/01/2008 |
| 7384862 | Method for fabricating semiconductor device and display device It is an object of the present invention to alleviate unevenness due to an opening for making a contact with the lower layer even when the opening has a large diameter (1 μm or more). Thus, it is a further object of the invention to reduce defects caused by the une... | 06/10/2008 |
| 7368753 | Thin film transistor array substrate and fabricating method thereof A thin film transistor array substrate includes a first conductive pattern group including a gate electrode of a thin film transistor and a gate line connected to the gate electrode; a semiconductor pattern defining a channel of the thin film transistor; a second co... | 05/06/2008 |
| 7364979 | Capcitor with single crystal tantalum oxide layer and method for fabricating the same A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a storage node formed over the inter-layer insulation layer and filled into t... | 04/29/2008 |
| 7361590 | Semiconductor device and manufacturing method thereof A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of four... | 04/22/2008 |
| 7358118 | Mounting method of flexible printed circuit and manufacturing method of electric optical device Aspects of the current invention are directed to a method of mounting a flexible printed circuit and a manufacturing method of an electric optical device. Each of the methods form semiconductor elements and first terminal portions for electrically connecting the sem... | 04/15/2008 |
| 7358110 | Image sensor having inner lens An image sensor includes an inner lens to enable incident light to reach a condensing lens, so that the incident light may further reach photodiodes. Light loss can be reduced and photosensitivity can be improved. The image sensor includes at least one microlens tha... | 04/15/2008 |
| 7348266 | Method and apparatus for a metallic dry-filling process An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the siz... | 03/25/2008 |
| 7335988 | Use of palladium in IC manufacturing with conductive polymer bump An apparatus and a method for forming a substrate having a palladium metal layer over at least one contact point of the substrate and having a flexible conductive polymer bump, preferably a two-stage epoxy, on the palladium plated contact point, are provided. The pr... | 02/26/2008 |
| 7329918 | Semiconductor memory device including storage nodes and resistors and method of manufacturing the same A semiconductor memory device according to embodiments of the invention includes storage nodes and resistors. A method of manufacturing the semiconductor memory device according to some embodiments of the invention includes forming an interlayer insulation layer on ... | 02/12/2008 |
| 7326358 | Plasma processing method and apparatus, and storage medium A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is for... | 02/05/2008 |
| 7265043 | Methods for making microwave circuits Disclosed are methods for making microwave circuits using thickfilm components. In an embodiment, the method includes depositing a dielectric over a ground plane, and then forming a conductor on the dielectric. The conductor is formed by depositing a conductive thic... | 09/04/2007 |
| 7244635 | Semiconductor device and method of manufacturing the same There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bonding pad fo... | 07/17/2007 |
| 7172711 | Interface materials and methods of production and use thereof An interface material comprising a resin mixture and at least one solder material is herein described. The resin material may comprise any suitable resin material, but it is preferred that the resin material be silicone-based comprising one or more compounds such as... | 02/06/2007 |
| 7166529 | Method of connecting wiring member A method of electrically connecting a wiring member to a plurality of electrodes which respectively correspond to a plurality of recording elements of a recording head, the wiring member including a plurality of wire portions and a plurality of terminal portions eac... | 01/23/2007 |
| 7158383 | Techniques for fabricating a resistor on a flexible base material A technique for fabricating a resistor on a flexible substrate. Specifically, at least a portion of a polyimide substrate is activated by exposure to a ion sputter etch techniques. A metal layer is disposed over the activated portion of the substrate, thereby result... | 01/02/2007 |
| 7135394 | Conductive layers and fabrication methods thereof Methods for forming conductive layers. A layer of metal composite is applied on a substrate, comprising a plurality of metal flakes, a plurality of nanometer metal spheres, and a plurality of mixed metal precursors. The plurality of mixed metal precursors comprises ... | 11/14/2006 |
| 7112502 | Method to fabricate passive components using conductive polymer A method and structure for an integrated circuit chip has a logic core which includes a plurality of insulating and conducting levels, an exterior conductor level and passive devices having a conductive polymer directly connected to the exterior conductor level. The... | 09/26/2006 |
| 7112528 | Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminum (CVD ... | 09/26/2006 |
| 7084053 | Unidirectionally conductive materials for interconnection A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as b... | 08/01/2006 |
| 7074722 | Method for fabricating semiconductor device with fine pattern The present invention relates to a method for fabricating a semiconductor device with a fine pattern. The method includes the steps of: (a) forming a semiconductor substrate structure including a substrate, a nitride layer for forming a hard mask, a plurality of con... | 07/11/2006 |
| 7052984 | Bump formation method and bump forming apparatus for semiconductor wafer A bump formation method and a bump forming apparatus for a semiconductor wafer are provided in which productivity when bumps are formed onto the semiconductor wafer is improved as compared with the conventional art. There are provided a bump forming head, a recognit... | 05/30/2006 |
| 7026231 | Method of producing organic semiconductor device including step of applying oxidizing agent solution to monomer layer to obtain polymer layer There is provided a method of producing an organic semiconductor device by which an organic semiconductor device having an optional configuration can easily be produced. A method of producing an organic semiconductor device comprising a gate insulating layer,... | 04/11/2006 |
| 7017795 | Solder pastes for providing high elasticity, low rigidity solder joints Solder pastes for providing high elasticity, low rigidity solder joints are disclosed. The solder pastes may be used between two parts having large mismatches in their coefficients of thermal expansion and/or when there is a high likelihood of mechanical deformity w... | 03/28/2006 |
| 6989324 | Fabrication method for arranging ultra-fine particles A method and resultant device, in which metal nanoparticles are self-assembled into two-dimensional lattices. A periodic hole pattern (wells) is fabricated on a photoresist substrate, the wells having an aspect ratio of less than 0.37. The nanoparticles are synthesi... | 01/24/2006 |
| 6982191 | Methods relating to forming interconnects and resulting assemblies Methods relating to forming interconnects through injection of conductive materials, to fabricating semiconductor component assemblies, and to resulting assemblies. A semiconductor component substrate, such as a semiconductor die or other substrate, has dielectric m... | 01/03/2006 |
| 6974723 | Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials A composition including an amount of at least one vinyl terminated polymer; an amount of at least one cross-linker comprising a terminal Si—H unit; an amount of at least one thermally conductive first filler, and at least one thermally conductive second filler, wh... | 12/13/2005 |
| 6972256 | Method and apparatus for forming thin film of metal The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a me... | 12/06/2005 |
| 6967412 | Wafer level underfill and interconnect process A chip scale package and a method for its manufacture which include providing sticky interconnects on a surface of a semiconductor die, the interconnects being surrounded by a layer of thermal epoxy. ... | 11/22/2005 |
| 6967640 | Microencapsulated electrophoretic display with integrated driver A mounted display assembly comprises a flexible substrate that supports both display elements and control circuits. The display assembly generally comprises: an electrical connection formed on the flexible substrate, the electrical connection having first and second... | 11/22/2005 |
| 6939744 | Use of palladium in IC manufacturing with conductive polymer bump An apparatus and a method for forming a substrate having a palladium metal layer over at least one contact point of the substrate and having a flexible conductive polymer bump, preferably a two-stage epoxy, on the palladium plated contact point, are provided. The pr... | 09/06/2005 |
| 6911385 | Interface layer for the fabrication of electronic devices The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably pr... | 06/28/2005 |
| 6897137 | Process for fabricating ultra-low contact resistances in GaN-based devices A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic con... | 05/24/2005 |