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| Number | Title | Issue Date |
| 8119514 | Cobalt-doped indium-tin oxide films and methods Methods of forming cobalt-doped indium-tin oxide structures are shown. Properties of structures include transparency, conductivity, and ferromagnetism. Monolayers that contain indium, monolayers that contain tin, and monolayers that contain cobalt are deposited onto... | 02/21/2012 |
| 8003511 | Memory cell formation using ion implant isolated conductive metal oxide Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of... | 08/23/2011 |
| 7838410 | Method of electrically connecting element to wiring, method of producing light-emitting element assembly, and light-emitting element assembly A method of electrically connecting an element to wiring includes the steps of forming a conductive fixing member precursor layer at least on wiring provided on a base; and arranging an element having a connecting portion on the wiring such that the connecting porti... | 11/23/2010 |
| 7825021 | Method for manufacturing display device It is an object of the present invention to provide a method for manufacturing a highly reliable display device with a preferable yield. A method for manufacturing a display device according to the invention comprises the steps of: forming a first electrode includin... | 11/02/2010 |
| 7517783 | Molybdenum-doped indium oxide structures and methods Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain indium and monolayers that contain molybdenum are deposited onto a substrate and subsequently processed to form molybdenum-doped indium oxide. The... | 04/14/2009 |
| 7432203 | Methods for fabricating a metal layer pattern Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/Ti... | 10/07/2008 |
| 7410893 | System and method for depositing a seed layer A method for depositing a seed layer for a controllable electric pathway on a substrate includes selectively dispensing a seed material from an inkjet material dispenser onto said substrate. ... | 08/12/2008 |
| 7405143 | Method for fabricating a seed layer The present invention produces a seed layer for the deposition of copper for metallizing integrated circuits. A diffusion barrier is deposited upon the wafer. In one embodiment of the invention, a metal oxide layer is then formed on the diffusion barrier. The oxidiz... | 07/29/2008 |
| 7405120 | Method of forming a gate insulator and thin film transistor incorporating the same Disclosed herein is a method of manufacturing a gate insulator and a thin film transistor (“TFT”) incorporating the gate insulator, including forming an oxygen-containing, conductive gate on a substrate; forming a gate insulator material layer on the substrate s... | 07/29/2008 |
| 7390712 | Methods of enhancing capacitors in integrated circuits Systems, devices, structures, and methods are described that inhibit dielectric degradation at high temperatures. An enhanced capacitor is discussed. The enhanced capacitor includes a first electrode, a dielectric that includes ditantalum pentaoxide, and a second el... | 06/24/2008 |
| 7390731 | Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the meta... | 06/24/2008 |
| 7384800 | Method of fabricating metal-insulator-metal (MIM) device with stable data retention In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta... | 06/10/2008 |
| 7381633 | Method of making a patterned metal oxide film A method of making a patterned metal oxide film includes jetting a sol-gel solution on a substrate. The sol-gel solution is dried to form a gel layer on the substrate. Portions of the gel layer are irradiated to pattern the gel layer and to form exposed portions. Ir... | 06/03/2008 |
| 7368343 | Low leakage MIM capacitor Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ... | 05/06/2008 |
| 7361054 | Connector assembly with bracket A connector assembly includes an insulative housing adapted for mating with a complementary connector, a conductive shell shrouding the insulative housing and comprising a front opening adapted for receiving the complementary connector and a flange adjacent to said ... | 04/22/2008 |
| 7361528 | Germanium infrared sensor for CMOS imagers A method of fabricating a germanium infrared sensor for a CMOS imager includes preparation of a donor wafer, including: ion implantation into a silicon wafer to form a P+ silicon layer; growing an epitaxial germanium layer on the P+silicon layer, forming a silicon-g... | 04/22/2008 |
| 7352022 | Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the same A capacitor having a dielectric layer including a composite oxide, the composite oxide including a transition metal and including a lanthanide group element, a memory device including the same and a method of manufacturing the capacitor are provided. The transition ... | 04/01/2008 |
| 7351285 | Method and system for forming a variable thickness seed layer A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thick... | 04/01/2008 |
| 7344967 | Method for forming an electrode In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n+-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The se... | 03/18/2008 |
| 7341948 | Method of making a semiconductor structure with a plating enhancement layer Disclosed is a method of making a semiconductor structure, wherein the method includes forming an interlayer dielectric (ILD) layer on a semiconductor layer, forming a conductive plating enhancement layer (PEL) on the ILD, patterning the ILD and PEL, depositing a se... | 03/11/2008 |
| 7288021 | Chemical-mechanical polishing of metals in an oxidized form The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanic... | 10/30/2007 |
| 7288442 | Method for manufacturing contact structures of wirings First, a conductive material of aluminum-based material is deposited and patterned to form a gate wire including a gate line, a gate pad, and a gate electrode. A gate insulating layer is formed by depositing nitride silicon in the range of more than 300° C. for 5 m... | 10/30/2007 |
| 7288479 | Method for forming a barrier/seed layer for copper metallization A method for improving adhesion of Cu to a Ru layer in Cu metallization. The method includes providing a substrate in a process chamber of a deposition system, depositing a Ru layer on the substrate in a chemical vapor deposition process, and forming a Cu seed layer... | 10/30/2007 |
| 7279421 | Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors A method and a deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors using CO gas and a dilution gas. The method includes providing a substrate in a process chamber of a processing system, forming a process gas containing a... | 10/09/2007 |
| 7279792 | Semiconductor device and method of manufacturing same According to this invention, a semiconductor device has an upper surface on which an external connection electrode is formed and a lower surface which opposes the upper surface and is in a mirror surface state. A roughened region roughened by laser marking is formed... | 10/09/2007 |
| 7273814 | Method for forming a ruthenium metal layer on a patterned substrate A method for forming a ruthenium metal layer includes providing a patterned substrate in a process chamber of a deposition system, where the patterned substrate contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer ... | 09/25/2007 |
| 7271098 | Method of fabricating a desired pattern of electronically functional material Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1. The method comprises the steps of: creating a first layer of patterning material 2 on the substrate whilst leaving areas of the substrate ex... | 09/18/2007 |
| 7270848 | Method for increasing deposition rates of metal layers from metal-carbonyl precursors A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas contai... | 09/18/2007 |
| 7265048 | Reduction of copper dewetting by transition metal deposition A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal lay... | 09/04/2007 |
| 7259085 | Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method ... | 08/21/2007 |
| 7256442 | Three-layer lower capacitor electrode A method for forming the lower electrode of a capacitor used for fabricating a 1-Gbit or above DRAM, using a material having a high dielectric constant, is used in a method for manufacturing a storage capacitor of a VLSI semiconductor device. The lower electrode, wh... | 08/14/2007 |
| 7247554 | Method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier The present invention generally relates to methods used for fabricating integrated circuits (“ICs”), using Ruthenium (“Ru”) and its oxides and/or Iridium (“Ir”) and its oxides as the diffusion barrier to contain and control copper (“Cu”) interconnect... | 07/24/2007 |
| 7247551 | Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device The invention provides a substrate for an electronic device including a conductive oxide layer which is formed by epitaxial growth with cubic crystal (100) orientation or pseudo-cubic crystal (100) orientation and which contains a metal oxide having a perovskite str... | 07/24/2007 |
| 7238612 | Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an exposed silicon surface so as to form a double metal layer. The semiconduc... | 07/03/2007 |
| 7235920 | Display device and method of its manufacture A display device and method for its manufacture. In a display device with a first array of individual display elements and a second array of control transistors for the display elements, control transistors are formed from a semiconductor material with a large band ... | 06/26/2007 |
| 7229859 | Thin film device provided with coating film, liquid crystal panel and electronic device, and method for making the thin film device Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section ... | 06/12/2007 |
| 7205599 | Devices having improved capacitance A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ... | 04/17/2007 |
| 7192849 | Methods of growing nitride-based film using varying pulses Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each eleme... | 03/20/2007 |
| 7193280 | Indium oxide conductive film structures One-transistor ferroelectric memory devices using an indium oxide film (In2O3), an In2O3 film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In2... | 03/20/2007 |
| 7193249 | Nitride-based light emitting device and method of manufacturing the same Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cla... | 03/20/2007 |
