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| Number | Title | Issue Date |
| 8133806 | Systems and methods for forming semiconductor materials by atomic layer deposition Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respec... | 03/13/2012 |
| 8012864 | Manufacturing method for interconnection having stress-absorbing layer between the semiconductor substrate and the external connection terminal A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first f... | 09/06/2011 |
| 8003510 | Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells are presented. The fabrication method for nano-scale chalcopyritic powders includes providing a solution consisting of group IB, IIIA, VIA elements on the chemistry periodic... | 08/23/2011 |
| 7875545 | Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices A method of producing an ohmic contact and a resulting ohmic contact structure are disclosed. The method includes the steps of forming a deposited film of nickel and silicon on a silicon carbide surface at a temperature below which either element will react with sil... | 01/25/2011 |
| 7863178 | Method for manufacturing a GaN based optical device The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based s... | 01/04/2011 |
| 7846828 | Semiconductor device and method for fabricating the same Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the... | 12/07/2010 |
| 7795125 | System and process for producing nanowire composites and electronic substrates therefrom The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composit... | 09/14/2010 |
| 7749884 | Method of forming an electronic device using a separation-enhancing species A method of forming an electronic device can include forming a metallic layer by an electrochemical process over a side of a substrate that includes a semiconductor material. The method can also include introducing a separation-enhancing species into the substrate a... | 07/06/2010 |
| 7674699 | III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof A III group nitride semiconductor substrate according to the present invention is fabricated by forming a metal film or metal nitride film 2′ with mesh structure in which micro voids are provided on a starting substrate 1, and growing a III group nit... | 03/09/2010 |
| 7659190 | Method for producing a Group III-V compound semiconductor A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the ... | 02/09/2010 |
| 7608532 | Method of growing nitride semiconductor material A method of growing nitride semiconductor material and particularly a method of growing Indium nitride is disclosed can increase surface flatness of a nitride semiconductor material and decrease density of V-defects therein. Further, the method can increase light em... | 10/27/2009 |
| 7557027 | Method of producing microcystalline silicon germanium suitable for micromachining A method of depositing a structural SiGe layer is presented. The structural SiGe layer may be located on top of a sacrificial layer above a substrate. The substrate may contain a semiconductor device such as a CMOS electronic circuit. The presented method uses a sil... | 07/07/2009 |
| 7468315 | System and process for producing nanowire composites and electronic substrates therefrom The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composit... | 12/23/2008 |
| 7417257 | III-nitride device with improved layout geometry A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of t... | 08/26/2008 |
| 7407859 | Compound semiconductor device and its manufacture A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGal-qN (0 | 08/05/2008 |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7355254 | Pinning layer for low resistivity N-type source drain ohmic contacts A system or apparatus including an N-type transistor structure including a gate electrode formed on a substrate and source and drain regions formed in the substrate; a contact to the source region; and a pinning layer disposed between the source region and the first... | 04/08/2008 |
| 7352045 | Adhesion and/or encapsulation of silicon carbide-based semiconductor devices on ceramic substrates A SiC die with Os and/or W/WC/TiC contacts and metal conductors is encapsulated either alone or on a ceramic substrate using a borosilicate (BSG) glass that is formed at a temperature well below upper device operating temperature limits but serves as a stable protec... | 04/01/2008 |
| 7341917 | Solution deposition of chalcogenide films containing transition metals Metal chalcogenide films comprising at least one transition metal chalcogenide are prepared by dissolving a metal chalcogenide containing at least one transition metal chalcogenide in a hydrazine compound and, optionally, an excess of chalcogen to provide a precurso... | 03/11/2008 |
| 7342244 | Spintronic transistor A semiconductor device including: a substrate comprising silicon; a channel region formed on the substrate; a spin injector formed on the substrate at a first side of the channel region and configured to diffuse a spin-polarized current into the channel region; a sp... | 03/11/2008 |
| 7332736 | Article comprising gated field emission structures with centralized nanowires and method for making the same This invention provides novel methods of fabricating novel gated field emission structures that include aligned nanowire electron emitters (individually or in small groups) localized in central regions within gate apertures. It also provides novel devices using nano... | 02/19/2008 |
| 7297625 | Group III-V crystal and manufacturing method thereof A method of manufacturing a group III-V crystal is made available by which good-quality group III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. A method of manufacturing a group III-V crystal, characteriz... | 11/20/2007 |
| 7297626 | Process for nickel silicide Ohmic contacts to n-SiC A Ni2Si-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of Ni2Si source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The Ni2Si Ohmic contact on n-SiC was rapid thermal anneale... | 11/20/2007 |
| 7282425 | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The... | 10/16/2007 |
| 7265030 | Method of fabricating silicon on glass via layer transfer A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantati... | 09/04/2007 |
| 7262505 | Selective electroless-plated copper metallization Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on... | 08/28/2007 |
| 7259084 | Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemic... | 08/21/2007 |
| 7230511 | Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator... | 06/12/2007 |
| 7186664 | Methods and structures for metal interconnections in integrated circuits A typical integrated-circuit fabrication requires interconnecting millions of microscopic transistors and resistors with metal wires. Making the metal wires flush, or coplanar, with underlying insulation requires digging trenches in the insulation, and then filling ... | 03/06/2007 |
| 7179727 | Formation of lattice-tuning semiconductor substrates A method of forming a lattice-tuning semiconductor substrate comprises the steps of defining parallel strips of a Si surface by the provision of spaced parallel oxide walls (2) on the surface, selectively growing a first SiGe layer on the strips such that fir... | 02/20/2007 |
| 7179731 | Hypercontacting The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region ... | 02/20/2007 |
| 7172956 | Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group i... | 02/06/2007 |
| 7166867 | III-nitride device with improved layout geometry A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of t... | 01/23/2007 |
| 7164209 | Methods of positioning and/or orienting nanostructures Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and p... | 01/16/2007 |
| 7147718 | Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates The invention relates to a device and method for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber, by means of reaction gases which are fed to the process chamber where they rea... | 12/12/2006 |
| 7132356 | Interconnection method A method of forming bumped substrates with protuberances for inverted or flip-connection bonding of electronic devices including semiconductor devices, integrated circuits, and/or application specific integrated circuits and electromechanical devices. The substrates... | 11/07/2006 |
| 7132699 | Compound semiconductor device and its manufacture A compound semiconductor device has: a substrate; a GaN channel layer; an n-type AlqGa1−qN (0 | 11/07/2006 |
| 7094651 | Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti... | 08/22/2006 |
| 7091120 | System and process for producing nanowire composites and electronic substrates therefrom The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composit... | 08/15/2006 |
