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| Number | Title | Issue Date |
| 8173476 | Image pickup device and image pickup system There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage o... | 05/08/2012 |
| 8163588 | Manufacturing method of a photoelectric conversion device A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a pr... | 04/24/2012 |
| 8021908 | Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period. ... | 09/20/2011 |
| 8017425 | Method for fabricating an image sensor capable of increasing photosensitivity An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer ... | 09/13/2011 |
| 8003424 | Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The tr... | 08/23/2011 |
| 7998779 | Solid-state imaging device and method of fabricating solid-state imaging device A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member configured to support the transparent member; a first mark disposed at eit... | 08/16/2011 |
| 7993953 | Method of manufacturing photoelectric conversion device A method of manufacturing a photoelectric conversion device, comprises forming a first insulating film on a semiconductor substrate, forming a gate electrode by forming an electrically conductive layer on the first insulating film and patterning the electrically con... | 08/09/2011 |
| 7993952 | Charge transfer device A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between. ... | 08/09/2011 |
| 7985612 | Method and device for reducing crosstalk in back illuminated imagers A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed laye... | 07/26/2011 |
| 7981717 | Image sensor and method of manufacturing the same An image sensor includes a pixel array including a photodiode, a peripheral region including a logic circuit, and an isolation region formed between the pixel array and the peripheral region and formed under the peripheral region to electrically isolate the pixel ar... | 07/19/2011 |
| 7968365 | Method for manufacturing solid-state imaging device A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is form... | 06/28/2011 |
| 7955888 | Method of fabricating image sensor having reduced dark current An image sensor includes a light receiving device, a field effect transistor, a stress layer pattern, and a surface passivation material. The light receiving device is formed in a first region of a substrate. The field effect transistor is formed in a second region ... | 06/07/2011 |
| 7935557 | Manufacturing method of a photoelectric conversion device A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a pr... | 05/03/2011 |
| 7915067 | Backside illuminated image sensor with reduced dark current A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer form... | 03/29/2011 |
| 7883923 | Method for manufacturing image sensor Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a method may include forming a semiconductor substrate including a pixel part and a peripheral part, forming an interlayer dielectric film including a met... | 02/08/2011 |
| 7863076 | Solid-state image pickup device, method for making same, and image pickup apparatus Disclosed herein is a solid-state image pickup device which includes: a light-receiving unit for photoelectric conversion of incident light; and a charge transfer unit of an n-channel insulating gate type configured to transfer a signal charge photoelectrically conv... | 01/04/2011 |
| 7863077 | Image sensor and method for manufacturing the same An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor... | 01/04/2011 |
| 7846760 | Doped plug for CCD gaps A method and structure of providing a doped plug to improve the performance of CCD gaps is discussed. A highly-doped region is implemented in a semiconductor, aligned beneath a gap. The plug provides a highly-conductive region at the semiconductor surface, therefore... | 12/07/2010 |
| 7785914 | Image sensor and method for manufacturing the same An image sensor including a substrate and an interlayer dielectric layer divided into a pixel region and a logic pad region. An image sensor may include at least one of the following: a color filter, an over coating layer, and a micro lens sequentially formed over t... | 08/31/2010 |
| 7723145 | Solid-state imaging device and manufacturing method for the same A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-rec... | 05/25/2010 |
| 7704776 | Method of forming a vertical image sensor that includes patterning an oxide layer to form a mask for implanting a floating diffusion area Embodiments relate to an image sensor and a method for manufacturing an image sensor that may prevent a photoresist pattern from remaining on gates by forming a floating diffusion area faster than the gates. According to embodiments, since the gates may not be influ... | 04/27/2010 |
| 7704775 | CCD type solid-state imaging apparatus and manufacturing method for the same The invention provides CCD type solid-state imaging apparatus comprises: photoelectric conversion elements; a plurality of first transfer paths extending in a first direction; and second transfer paths extending in a first direction; the first transfer paths and the... | 04/27/2010 |
| 7687302 | Frame shutter pixel with an isolated storage node A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion. ... | 03/30/2010 |
| 7662658 | Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concen... | 02/16/2010 |
| 7655495 | Damascene copper wiring optical image sensor A CMOS image sensor array and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack with improved thickness uniformity to result in a pixel array exhibiting increased li... | 02/02/2010 |
| 7645629 | Fabricating CMOS image sensor A CMOS image sensor and a fabricating method thereof are provided. The method includes forming a nitride layer over a boundary region between a device isolation region and a pixel region, forming a silicide barrier layer in the pixel region and performing a silicide... | 01/12/2010 |
| 7638354 | Image sensor and method of fabricating the same An image sensor can include a gate insulation layer, a gate electrode, a photodiode, and a floating diffusion region. The gate insulation layer can be formed on and/or over a semiconductor substrate for a transfer transistor. The gate insulation layer includes a fir... | 12/29/2009 |
| 7625774 | Method of manufacturing CMOS image sensor Embodiments relate to a method of manufacturing a CMOS image sensor in which, when a buried photodiode is formed, a p-type impurity region may be formed simultaneously with a p-type LDD region in the photo diode region. Additionally, a p-type impurity region may be ... | 12/01/2009 |
| 7622321 | High dielectric constant spacer for imagers An imager having gates with spacers formed of a high dielectric material. The high dielectric spacer provides larger fringing fields for charge transfer and improves image lag and charge transfer efficiency. ... | 11/24/2009 |
| 7598110 | CMOS image sensor and method for manufacturing the same A method for manufacturing a CMOS image sensor may include at least one of the following steps: Forming a salicide blocking layer on an entire surface of a semiconductor substrate having a photodiode area and a transistor. Forming a photoresist pattern inclined at a... | 10/06/2009 |
| 7595214 | Solid-state image pickup device and manufacturing method for the same A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfe... | 09/29/2009 |
| 7595213 | Semiconductor devices, CMOS image sensors, and methods of manufacturing same A semiconductor device includes: a trench device isolating region formed in a substrate to define a photodiode active region; a channel stop impurity region formed in the substrate contacting the device isolating region, wherein the channel stop impurity region surr... | 09/29/2009 |
| 7585694 | Manufacturing method of solid-state imaging device Provided is a manufacturing method of a CCD solid-state imaging device having such an impurity concentration distribution with which shading is reduced and formation of a buried channel endowed with a large saturation signal charge amount is made possible. The manuf... | 09/08/2009 |
| 7569414 | CMOS imager with integrated non-volatile memory A CMOS imager and non-volatile memory are integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. A protective layer covers the non-volatile memory contained on the substrat... | 08/04/2009 |
| 7534644 | Solid-state imaging device, production method and drive method thereof, and camera A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of form... | 05/19/2009 |
| 7534643 | CMOS image sensor and method for fabricating the same A method for fabricating a CMOS image sensor includes: forming a gate electrode on a pixel region of the semiconductor substrate and, at the same time, forming a polysilicon pattern on a middle resistor region; forming a first lightly doped n-type diffusion region o... | 05/19/2009 |
| 7524695 | Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the photosensitive element to the... | 04/28/2009 |
| 7507598 | Image sensor fabrication method and structure A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The p... | 03/24/2009 |
| 7498188 | Contacts for CMOS imagers and method of formation Low leakage contacts on leakage sensitive areas of a CMOS imager, such as a floating diffusion region or a photodiode, are disclosed. At least one low leakage polysilicon contact is provided over a leakage sensitive area of a CMOS imager. The polysilicon contact com... | 03/03/2009 |
| 7436012 | Solid state imaging apparatus and method for fabricating the same A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-c... | 10/14/2008 |
