Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 8183141 | Methods of forming semiconductor devices Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-fr... | 05/22/2012 |
| 8183140 | Semiconductor device and method of fabricating the same A method of fabricating a semiconductor device and a flash memory device are provided. The method of fabricating the semiconductor device includes: forming a nitride film on a semiconductor substrate; forming a sacrificial vertical structure on the nitride film; for... | 05/22/2012 |
| 8158502 | Method of manufacturing a semiconductor device including a silicon pillar A method of manufacturing a semiconductor device includes forming silicon pillar 11 on substrate 10, forming a protective film which covers an upper end portion and a lower end portion of a side surface of silicon pillar 11, forming a constricte... | 04/17/2012 |
| 8153514 | Method of forming metal/high-κ gate stacks with high mobility The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the g... | 04/10/2012 |
| 8148249 | Methods of fabricating high-k metal gate devices Methods of fabricating semiconductor devices with high-k/metal gate features are disclosed. In some instances, methods of fabricating semiconductor devices with high-k/metal gate features are disclosed that prevent or reduce high-k/metal gate contamination of non-hi... | 04/03/2012 |
| 8138076 | MOSFETs having stacked metal gate electrodes and method MOSFETs having stacked metal gate electrodes and methods of making the same are provided. The MOSFET gate electrode includes a gate metal layer formed atop a high-k gate dielectric layer. The metal gate electrode is formed through a low oxygen content deposition pro... | 03/20/2012 |
| 8138077 | Flash memory device and method of fabricating the same A flash memory device includes an isolation layer formed on an isolation region of a semiconductor substrate, a tunnel insulating layer formed on an active region of the semiconductor substrate, a first conductive layer formed over the tunnel insulating layer, a die... | 03/20/2012 |
| 8124514 | Nonvolatile semiconductor storage device and method for manufacturing same A nonvolatile semiconductor storage device includes: a plurality of stacked units juxtaposed on a major surface of a substrate, each stacked unit aligning in a first direction parallel to the major surface of the substrate; and a gate electrode aligning parallel to ... | 02/28/2012 |
| 8124513 | Germanium field effect transistors and fabrication thereof Germanium field effect transistors and methods of fabricating them are described. In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer. The germanium oxide layer and th... | 02/28/2012 |
| 8119511 | Non-volatile memory device with improved immunity to erase saturation and method for manufacturing same A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-fun... | 02/21/2012 |
| 8119510 | Manufacturing method of semiconductor device Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving a... | 02/21/2012 |
| 8114763 | Tantalum aluminum oxynitride high-K dielectric Electronic apparatus and methods of forming the electronic apparatus may include a tantalum aluminum oxynitride film for use in a variety of electronic systems and devices. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantal... | 02/14/2012 |
| 8110490 | Gate oxide leakage reduction A method of manufacturing a semiconductor device comprising forming a gate oxide layer over a substrate subjecting the gate oxide layer to a first nitridation process, subjecting the gate oxide layer to a first anneal process after the first nitridation process, sub... | 02/07/2012 |
| 8110491 | Method of manufacturing semiconductor device and substrate processing apparatus A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium al... | 02/07/2012 |
| 8105930 | Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamb... | 01/31/2012 |
| 8084345 | Methods of forming dispersions of nanoparticles, and methods of forming flash memory cells Some embodiments include methods of forming dispersions of nanoparticles. The nanoparticles are incorporated into first coordination complexes in which the nanoparticles are coordinated to hydrophobic ligands, and the first coordination complexes are dispersed withi... | 12/27/2011 |
| 8071467 | Methods of forming patterns, and methods of forming integrated circuits Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of... | 12/06/2011 |
| 8058162 | Nonvolatile semiconductor memory and method of manufacturing the same A method of manufacturing a nonvolatile semiconductor memory includes: forming an insulator structure on a semiconductor substrate in a first region; forming a first gate insulating film on the semiconductor substrate outside the first region; blanket depositing a f... | 11/15/2011 |
| 8048791 | Method of forming a semiconductor device Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first... | 11/01/2011 |
| 8030198 | Semiconductor device and manufacturing method thereof A semiconductor device includes a silicon substrate, an SiO film, and a High-K film. The SiO film is first formed on the silicon substrate and then subjected to a nitridation process to obtain an SiON film from the SiO film. The nitridation process is performed such... | 10/04/2011 |
| 8021970 | Method of annealing a dielectric layer A method includes forming a first dielectric layer over a substrate; forming nanoclusters over the first dielectric layer; forming a second dielectric layer over the nanoclusters; annealing the second dielectric layer using nitrous oxide; and after the annealing the... | 09/20/2011 |
| 8017510 | Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the semiconductor substrate in the element region. A gate electrode is formed on the... | 09/13/2011 |
| 7994037 | Gate dielectrics of different thickness in PMOS and NMOS transistors By providing a gate dielectric material of increased thickness for P-channel transistors compared to N-channel transistors, degradation mechanisms, such as negative bias threshold voltage instability, hot carrier injection and the like, may be reduced. Due to the en... | 08/09/2011 |
| 7989332 | Thin film transistor, display device having thin film transistor, and method for manufacturing the same A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film fo... | 08/02/2011 |
| 7989331 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device including forming a mask layer on a polycrystalline silicon film formed on a semiconductor substrate via an insulating film; forming a dense pattern and a sparse pattern on the mask layer to form a mask; etching the p... | 08/02/2011 |
| 7977227 | Method of manufacturing a non-volatile memory device A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to... | 07/12/2011 |
| 7972950 | Method of fabricating semiconductor device having dual gate A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a fi... | 07/05/2011 |
| 7972951 | Memory device etch methods A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second die... | 07/05/2011 |
| 7968443 | Cross-contamination control for processing of circuits comprising MOS devices that include metal comprising high-K dielectrics A cross method for fabricating a CMOS integrated circuit (IC) includes providing a semiconductor wafer having a topside semiconductor surface, a bevel semiconductor surface, and a backside semiconductor surface, wherein the bevel semiconductor surface and backside s... | 06/28/2011 |
| 7964489 | Semiconductor device A semiconductor device includes: a p-channel MIS transistor including: a first insulating layer formed on a semiconductor region between a source region and a drain region, and containing at least silicon and oxygen; a second insulating layer formed on the first ins... | 06/21/2011 |
| 7960267 | Method for making a stressed non-volatile memory device A method of making a semiconductor device on a semiconductor layer includes: forming a gate dielectric over the semiconductor layer; forming a layer of gate material over the gate dielectric; etching the layer of gate material to form a select gate; forming a storag... | 06/14/2011 |
| 7947591 | Semiconductor devices with dual-metal gate structures and fabrication methods thereof Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped r... | 05/24/2011 |
| 7943500 | Semiconductor device and method of manufacturing the same The method of manufacturing a semiconductor device comprises; forming an HfSiO film 36 on a silicon substrate 26; exposing the HfSiO film 36 to NH3 gas to thereby form an HfSiON film 38; forming an HfSiO film 40 on the H... | 05/17/2011 |
| 7939442 | Strontium ruthenium oxide interface Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing... | 05/10/2011 |
| 7927993 | Cross-contamination control for semiconductor process flows having metal comprising gate electrodes A method for fabricating a CMOS integrated circuit (IC) includes providing a semiconductor including wafer having a topside semiconductor surface, a bevel semiconductor surface, and a backside semiconductor surface. A gate dielectric layer is formed on at least the ... | 04/19/2011 |
| 7923363 | SONOS memory device with optimized shallow trench isolation Method of manufacturing a non-volatile memory device on a semiconductor substrate in a memory area, said non-volatile memory device comprising a cell stack of a first semiconductor layer, a charge trapping layer and an electrically conductive layer, the charge trapp... | 04/12/2011 |
| 7910467 | Method for treating layers of a gate stack A method for fabricating a semiconductor device with improved performance is disclosed. The method comprises providing a semiconductor substrate; forming one or more gate stacks having an interfacial layer, a high-k dielectric layer, and a gate layer over the substr... | 03/22/2011 |
| 7892959 | Method of manufacturing flash memory device with reduced void generation A method of manufacturing a flash memory device that may include forming a first oxide film pattern and a first polysilicon pattern on a semiconductor substrate; sequentially forming a dielectric film pattern and a second polysilicon pattern on the semiconductor sub... | 02/22/2011 |
| 7892960 | Method for forming gate oxide of semiconductor device The method for forming a triple gate oxide of a semiconductor device includes the steps of defining a first region, a second region and a third region, forming a first oxide film and forming a second oxide film on the first oxide film, blocking the first region and ... | 02/22/2011 |
| 7858509 | High-dielectric film substrate processing method A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film ... | 12/28/2010 |
