Class 438/590 - Compound semiconductor

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the insulated gate is formed on a compound
No. of patents: 112
Last issue date: 04/17/2012

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Number	Title	Issue Date
8158501	Compound semiconductor substrate grown on metal layer, method of manufacturing the same, and compound semiconductor device using the same The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes ...	04/17/2012
8043950	Semiconductor device and manufacturing method thereof It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the...	10/25/2011
7816241	Method for preparing compound semiconductor substrate Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids t...	10/19/2010
7399988	Photodetecting device and method of manufacturing the same A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure inclu...	07/15/2008
7387953	Laminated layer structure and method for forming the same The invention relates to a laminated layer structure that includes a substrate and a stack of a plurality of layers of a material that includes at least two compounds A and B, wherein compound A has a crystalline structure being sufficient to allow a homo- or hetero...	06/17/2008
7361944	Electrical device with a plurality of thin-film device layers A highly reliable electrical device having a multilayered structure of a plurality of thin-film device layers and a method for manufacturing the same are provided. An electrical device includes a plurality of thin-film layers deposited and including a plurality of t...	04/22/2008
7341917	Solution deposition of chalcogenide films containing transition metals Metal chalcogenide films comprising at least one transition metal chalcogenide are prepared by dissolving a metal chalcogenide containing at least one transition metal chalcogenide in a hydrazine compound and, optionally, an excess of chalcogen to provide a precurso...	03/11/2008
7338828	Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic c...	03/04/2008
7312128	Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amo...	12/25/2007
7300833	Process for producing semiconductor integrated circuit device When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and c...	11/27/2007
7276456	Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same A compound semiconductor structure is provided, which includes a GaAs-based supporting semiconductor structure having a surface on which a dielectric material is to be formed. A first layer of gallium oxide is located on the surface of the supporting semiconductor s...	10/02/2007
7241694	Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a tre...	07/10/2007
7238589	In-place bonding of microstructures A method for bonding microstructures to a semiconductor substrate using attractive forces, such as, hydrophobic, van der Waals, and covalent bonding is provided. The microstructures maintain their absolute position with respect to each other and translate vertically...	07/03/2007
7227176	Etch stop layer system A semiconductor structure including a uniform etch-stop layer. The uniform etch stop layer has a relative etch rate which is less than approximately the relative etch rate of Si doped with 7×1019 boron atoms/cm3. A method for forming a semicon...	06/05/2007
7202182	Method of passivating oxide/compound semiconductor interface The present invention provides a method of passivating an oxide compound disposed on a III-V semiconductor substrate. The method is intended for use with dielectric stacks, gallate compounds, and gallium compounds used in gate quality oxide layers. The method includ...	04/10/2007
7199391	Device with quantum dot layer spaced from delta doped layer A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of th...	04/03/2007
7187014	Semiconductor device and method for fabricating the same A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been for...	03/06/2007
7172933	Recessed polysilicon gate structure for a strained silicon MOSFET device A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features simultaneous formation of recesses in a top portion of a conductive gate...	02/06/2007
7158357	Capacitor design in ESD circuits for eliminating current leakage An electrostatic discharge (ESD) protection circuit for an integrated circuit (IC) is disclosed. The ESD protection circuit has a RC module having a resistor and capacitor connected in series; and a current dissipation module for dissipating the ESD, wherein the cap...	01/02/2007
7148130	Semiconductor device and method of manufacturing the same A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insula...	12/12/2006
7144766	Method of manufacturing semiconductor integrated circuit device having polymetal gate electrode When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and c...	12/05/2006
7145167	High speed Ge channel heterostructures for field effect devices A method and a layered heterostructure for forming high mobility Ge channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, and a channel structure of a compressively strained epitaxial Ge layer h...	12/05/2006
7135347	Method for manufacturing nitride film including high-resistivity GaN layer and epitaxial substrate manufactured by the method A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carri...	11/14/2006
7109077	Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound A dielectric layer (50) is formed over a semiconductor (10) that contains a first region (20) and a second region (30). A polysilicon layer is formed over the dielectric layer (50) and over the first region (20) and the seco...	09/19/2006
7094651	Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the soluti...	08/22/2006
7091563	Method and structure for improved MOSFETs using poly/silicide gate height control A method for manufacturing an integrated circuit that has a plurality of semiconductor devices including an n-type field effect transistor and a p-type field effect transistor. This method involves depositing oxide fill on the n-type transistor and the p-type transi...	08/15/2006
7081414	Deposition-selective etch-deposition process for dielectric film gapfill A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products...	07/25/2006
7078300	Thin germanium oxynitride gate dielectric for germanium-based devices A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-base...	07/18/2006
7049187	Manufacturing method of polymetal gate electrode When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and c...	05/23/2006
7045419	Elimination of the fast-erase phenomena in flash memory A method of forming a semiconductor device that includes providing a semiconductor substrate, forming a first insulating layer over the semiconductor substrate, forming a floating gate over the first insulating layer with a reaction gas, wherein the floating gate co...	05/16/2006
7037817	Semiconductor device and method for fabricating the same A semiconductor device has a first semiconductor layer composed of a group III–V nitride, an oxide film formed by oxidizing a second semiconductor layer composed of a group III–V nitride to be located on the gate electrode formation region of the first semicondu...	05/02/2006
7026231	Method of producing organic semiconductor device including step of applying oxidizing agent solution to monomer layer to obtain polymer layer There is provided a method of producing an organic semiconductor device by which an organic semiconductor device having an optional configuration can easily be produced. A method of producing an organic semiconductor device comprising a gate insulating layer,...	04/11/2006
6998311	Methods of forming output prediction logic circuits with ultra-thin vertical transistors Very fast integrated OPL circuits, such as pseudo-NMOS OPL and dynamic OPL, comprising CMOS gate arrays having ultra-thin vertical NMOS transistors are disclosed. The ultra-thin vertical NMOS transistors of the CMOS gate arrays are formed with relaxed silicon german...	02/14/2006
6989556	Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor (10) includes a gate insulating structure comprised of a first oxide layer that includes a mixture of indium and gallium oxide compounds (30) positioned immediat...	01/24/2006
6958277	Surface preparation prior to deposition Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is tr...	10/25/2005
6955972	Methods of fabricating integrated circuit devices having trench isolation structures Methods of fabricating integrated circuit devices include forming a trench in a face of an integrated circuit substrate. The trench has a trench sidewall and a trench floor. The method further including forming a first insulating layer on the trench sidewall that ex...	10/18/2005
6955978	Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap ...	10/18/2005
6953729	Heterojunction field effect transistor and manufacturing method thereof In a heterojunction FET in which source and drain areas are formed by carrying out high temperature annealing process after carrying out ion implantation in areas to be formed into source and drain areas, conventionally, the N-type carrier supply layer and the N-typ...	10/11/2005
6936506	Strained-silicon devices with different silicon thicknesses A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and...	08/30/2005
6933181	Method for fabricating semiconductor device In a method for fabricating a semiconductor device, a first semiconductor layer of aluminum gallium nitride is first formed on a substrate, and a protection film containing silicon is then formed on the first semiconductor layer in such a manner that a device-isolat...	08/23/2005

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Class 438/590 - Compound semiconductor