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| Number | Title | Issue Date |
| 8178381 | Back side illumination image sensor and method for manufacturing the same Disclosed are a back side illumination image sensor and a method for manufacturing the same. The back side illumination image sensor includes an isolation region and a pixel area on a front side of a first substrate; a photo detector and a readout circuitry on the p... | 05/15/2012 |
| 8124438 | Method of fabricating CMOS image sensor A CMOS image sensor and a method of fabricating the same. The CMOS image sensor may minimize disappearance of electrons generated by light without transmission of electrons to a transfer gate. A method of manufacturing a CMOS image sensor may include forming a trenc... | 02/28/2012 |
| 8105861 | CMOS image sensor with reduced dark current A carbon-containing semiconductor layer is formed on exposed surfaces of a p− doped semiconductor layer abutting sidewalls of a shallow trench. Following formation of a dielectric layer on the carbon-containing semiconductor layer, a surface pinning layer having a... | 01/31/2012 |
| 8071415 | Method of fabricating semiconductor device There is provided a method of fabricating a semiconductor device having plural light receiving elements, and having an amplifying element, the method including: a) forming an active region on the semiconductor substrate for configuring the amplifying element; b) for... | 12/06/2011 |
| 8062919 | Monolithic silicon-based photonic receiver An integrated circuit, and method for manufacturing the integrated circuit, where the integrated circuit can include a phototransistor comprising a base having a SiGe base layer of a predetermined germanium composition and a thickness of more than 65 nm and less tha... | 11/22/2011 |
| 8039287 | Method of forming high gain, low noise, photodiode sensor for image sensors Embodiments of the present invention provide a pixel cell for an image sensor that includes a photodiode, which provides high gain, low noise, and low dark current. The pixel cell includes a photodiode comprising layers of a first material and at least a second mate... | 10/18/2011 |
| 8030114 | Method and structure to reduce dark current in image sensors A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor ... | 10/04/2011 |
| 8008108 | Solid-state imaging device, method of producing the same, and camera To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surf... | 08/30/2011 |
| 7998778 | Method of producing a solid-state imaging device To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surf... | 08/16/2011 |
| 7993951 | Method of manufacturing photoelectric conversion device In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit r... | 08/09/2011 |
| 7977140 | Methods for producing solid-state imaging device and electronic device A method for producing a solid-state imaging device includes steps of: forming transfer electrodes on a substrate having a plurality of light-sensing portions through a gate insulating layer so that the light-sensing portions are exposed; forming a planarized insula... | 07/12/2011 |
| 7932120 | Methods of manufacturing CMOS image sensors Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at ... | 04/26/2011 |
| 7927908 | Method for manufacturing a bolometric detector The method is designed for manufacturing a bolometric detector equipped with a membrane suspended above a substrate by means of heat-insulating arms fixed to the substrate by anchoring points. The membrane has a heat-sensitive thin layer with a base comprising at le... | 04/19/2011 |
| 7883922 | Image sensor and method for manufacturing the same An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or el... | 02/08/2011 |
| 7833818 | Integrated structure of MEMS device and CMOS image sensor device and fabricating method thereof An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel intercon... | 11/16/2010 |
| 7824949 | Structure and method for flexible sensor array A method of forming a sensor array. The method includes depositing a source/drain contact layer; depositing a semiconductor layer on the source/drain contact layer; and patterning the source/drain contact layer and the semiconductor layer substantially simultaneousl... | 11/02/2010 |
| 7795065 | Image sensor and manufacturing method thereof Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral circuitry is provided. An interlayer dielectric including lines can be form... | 09/14/2010 |
| 7736935 | Passivation of semiconductor structures having strained layers The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diff... | 06/15/2010 |
| 7718461 | Nanometer-scale electromechanical switch and fabrication process The present invention describes nano-scale fabrication technique used to create a sub-micron wide gap across the center conductor of a coplanar waveguide transmission line configured in a fixed-fixed beam arrangement, resulting in a pair of opposing cantilever beams... | 05/18/2010 |
| 7713774 | Method of manufacturing image sensor Embodiments relate to a method of manufacturing an image sensor which may include forming a gate pattern including a tunnel oxide film, an oxide-nitride-oxide (ONO) film, a floating gate and a control gate over a semiconductor substrate. An oxide film and a nitride ... | 05/11/2010 |
| 7674648 | Extended dynamic range using variable sensitivity pixels A method for reading out an image sensor, the method includes the steps of integrating charge in a photodetector with the photodetector at a first capacitance; reading the resulting signal level at a first time with the photodetector at the first capacitance; changi... | 03/09/2010 |
| 7670865 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is fo... | 03/02/2010 |
| 7659133 | Method for manufacturing CMOS image sensor Disclosed is a method for manufacturing a CMOS image sensor, capable of preventing dopants implanted with high energy from penetrating into a lower part of a gate electrode when a photodiode is formed, thereby preventing current leakage of a transistor and variation... | 02/09/2010 |
| 7632699 | Method for manufacturing CMOS image sensor A method for manufacturing a CMOS image sensor that independently forms a poly routing line connected to a gate poly of a reset transistor is provided. In an embodiment, a semiconductor substrate is prepared defining a device isolation region and an active region. S... | 12/15/2009 |
| 7592196 | Method for fabricating a CMOS image sensor A method for fabricating a CMOS image sensor may include forming an isolation layer defining an active area on a semiconductor substrate, forming first and second gate electrodes in the transistor area of the semiconductor substrate, forming a photodiode area in the... | 09/22/2009 |
| 7582502 | Method for manufacturing back side illumination image sensor Provided are methods for manufacturing a back side illumination image sensor. In one method, an ion implantation layer is formed in an entire region of a front side of a first substrate. A device isolation region is formed in the front side of the first substrate to... | 09/01/2009 |
| 7563637 | Image sensor Embodiments relate to and image sensor. In embodiments, the image sensor may include a semiconductor substrate, a photodiode region, a gate electrode, a dummy gate, and an interlayer dielectric layer. The semiconductor substrate includes a field oxide layer. The pho... | 07/21/2009 |
| 7510900 | Methods of forming a double pinned photodiode A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semicondu... | 03/31/2009 |
| 7462507 | Structure of a CMOS image sensor and method for fabricating the same An image sensor device and method for forming the same include a photodiode formed in a substrate, at least one electrical interconnection line electrically associated with the photodiode, a light passageway having a light inlet, the light passageway being positione... | 12/09/2008 |
| 7459332 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and method for fabricating same are provided. The CMOS image sensor can include a gate electrode formed on an active area of a first conductive type semiconductor substrate, on which a photodiode area and a transistor area are defined; a low-dens... | 12/02/2008 |
| 7442572 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a ... | 10/28/2008 |
| 7425725 | Temperature sensor for a liquid crystal display panel A sensor is provided, which includes a substrate, an insulating layer formed on the substrate, a semiconductor formed on the insulating layer, an ohmic contact formed on the semiconductor, a sensor input electrode and a sensor output electrode formed on the ohmic co... | 09/16/2008 |
| 7402451 | Optimized transistor for imager device An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area extension region on one side of the transistor gate opposite the pho... | 07/22/2008 |
| 7399997 | Semiconductor laser device and fabrication method thereof A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The st... | 07/15/2008 |
| 7387907 | Image sensor with optical guard ring and fabrication method thereof An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substr... | 06/17/2008 |
| 7372124 | Light-receiving element and photodetector using the same A light-receiving element may easily detect the barycenter of a light intensity of light having a long-wavelength band in an optical communication. An InGaAs layer (i-type layer) and a p-type InP layer are stacked on an n-type InP substrate. Electrodes are formed on... | 05/13/2008 |
| 7361526 | Germanium photo detector having planar surface through germanium epitaxial overgrowth A method of fabricating a germanium photo detector includes preparing a silicon substrate wafer and depositing and planarizing a silicon oxide layer on the silicon substrate. Contact holes are formed in the silicon oxide layer. An N+ epitaxial germanium layer is gro... | 04/22/2008 |
| 7358107 | Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxia... | 04/15/2008 |
| 7354784 | Method for fabricating liquid crystal display device of color-filter on transistor type A method for fabricating a color-filter on transistor (COT) type LCD device, to improve the yield by simplifying the fabrication process with diffraction exposure, which includes the steps of forming a gate line, a gate electrode, a gate pad and a data pad on a subs... | 04/08/2008 |
| 7354809 | Method for double-sided processing of thin film transistors This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods a... | 04/08/2008 |
