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| Number | Title | Issue Date |
| 8168521 | Methods of manufacturing semiconductor devices having low resistance buried gate structures In a method of manufacturing a semiconductor device, a recess is formed in an active region of a substrate. A gate insulation layer is formed in the first recess. A barrier layer is formed on the gate insulation layer. A preliminary nucleation layer having a first r... | 05/01/2012 |
| 8148248 | Semiconductor device and manufacturing method thereof There is provided a semiconductor device having a metal silicide layer which can suppress the malfunction and the increase in power consumption of the device. The semiconductor device has a semiconductor substrate containing silicon and having a main surface, first ... | 04/03/2012 |
| 8114762 | Method for manufacturing trench MOSFET device with low gate charge A method for manufacturing trench MOSFET device with low gate charge includes the steps of providing a substrate of first conductivity type; forming an epitaxial layer of first conductivity type on the substrate; forming a body region of second conductivity type in ... | 02/14/2012 |
| 8101512 | Method of enhancing lithography capabilities during gate formation in semiconductors having a pronounced surface topography In a mesa isolation configuration for forming a transistor on a semiconductor island, an additional planarization step is performed to enhance the uniformity of the gate patterning process. In some illustrative embodiments, the gate electrode material may be planari... | 01/24/2012 |
| 8058161 | Recessed STI for wide transistors A method of manufacturing a semiconductor device having shallow trench isolation includes steps of forming a hard mask layer on the substrate surface, etching a trench through the hard mask, filling the trench with an isolation material, forming a recessed trench, a... | 11/15/2011 |
| 8043949 | Method of manufacturing silicon carbide semiconductor device There is provided a method of manufacturing a silicon carbide semiconductor device including the steps of: in a semiconductor stacked substrate including a first conductivity type silicon carbide crystal substrate, a first conductivity type silicon carbide crystal l... | 10/25/2011 |
| 8034701 | Methods of forming recessed gate electrodes having covered layer interfaces Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysi... | 10/11/2011 |
| 8030197 | Recessed channel array transistor (RCAT) in replacement metal gate (RMG) logic flow Embodiments of the invention relate to a method of fabricating logic transistors using replacement metal gate (RMG) logic flow with modified process to form recessed channel array transistors (RCAT) on a common semiconductor substrate. An embodiment comprises formin... | 10/04/2011 |
| 7964488 | Semiconductor device and method for fabricating the same A semiconductor device includes a substrate where an isolation region and a plurality of active regions are defined, an anti-interference layer formed over the substrate in the isolation region, and a gate line simultaneously crossing the active region and the anti-... | 06/21/2011 |
| 7902057 | Methods of fabricating dual fin structures Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin stru... | 03/08/2011 |
| 7879709 | Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of ... | 02/01/2011 |
| 7879708 | Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gate A method for fabricating a floating gate memory device comprises using a buried diffusion oxide that is below the floating gate thereby producing an increased step height between the floating gate and the buried diffusion oxide. The increased step height can produce... | 02/01/2011 |
| 7875541 | Shallow source MOSFET Fabricating a semiconductor device includes forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench ... | 01/25/2011 |
| 7875540 | Method for manufacturing recess gate in a semiconductor device A method for manufacturing a recess gate in a semiconductor device includes forming a field oxide layer on a substrate to define an active region, forming a hard mask pattern over the substrate to selectively expose at least a portion of the active region, forming a... | 01/25/2011 |
| 7871913 | Method for manufacturing semiconductor device having vertical transistor A method for manufacturing a semiconductor device having a vertical transistor includes forming hard masks on a semiconductor substrate to expose portions of the semiconductor substrate. Then the exposed portions of the semiconductor substrate are etched to define g... | 01/18/2011 |
| 7871914 | Methods of fabricating semiconductor devices with enlarged recessed gate electrodes A semiconductor device includes a semiconductor substrate having a recess therein. A gate insulator is disposed on the substrate in the recess. The device further includes a gate electrode including a first portion on the gate insulator in the recess and a second re... | 01/18/2011 |
| 7863174 | Vertical pillar transistor A vertical pillar transistor may include a plurality of lower pillars, a plurality of upper pillars, a first insulation part, a second insulation part and a word line. The plurality of lower pillars protrudes substantially perpendicular to a substrate and is defined... | 01/04/2011 |
| 7858508 | Semiconductor device and method of manufacturing the same In a method of manufacturing a semiconductor device, a trench is formed to have an upper quadrangular section and a lower circular section which is formed through a hydrogen annealing process, to extend in a depth direction of a semiconductor substrate. An insulatin... | 12/28/2010 |
| 7842594 | Semiconductor device and method for fabricating the same A semiconductor device includes a substrate having a recess in an area where a gate is to be formed, spacers formed over sidewalls of the recess, and a first gate electrode filling in the recess. The spacers include material having the first work function or insulat... | 11/30/2010 |
| 7838405 | Method for manufacturing semiconductor device having bulb-type recessed channel A method for manufacturing a semiconductor device having a bulb-type recessed channel including: forming a trench that defines an active region including a channel region having a sidewall and a junction region in a semiconductor substrate; forming a device isolatio... | 11/23/2010 |
| 7829449 | Process for fabricating an electronic integrated circuit and electronic integrated circuit thus obtained An electronic integrated circuit is fabricated by forming on a substrate, of which a part is composed of absorbing material, a portion made of a sacrificial material. The sacrificial material includes cobalt, nickel, titanium, tantalum, tungsten, molybdenum, gallium... | 11/09/2010 |
| 7799667 | Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode A semiconductor device includes: a semiconductor substrate with a principal plane; a base region disposed on the principal plane; a source region disposed on the principal plane in the base region to be shallower than the base region; a drain region disposed on the ... | 09/21/2010 |
| 7772103 | Method of forming a wire structure In a method of forming a wire structure, first active regions and second active regions are formed on a substrate. Each of the first active regions has a first sidewall of a positive slope and a second sidewall opposed to the first sidewall. The second active region... | 08/10/2010 |
| 7745319 | System and method for fabricating a fin field effect transistor There is provided a system and method for fabricating a fin field effect transistor. More specifically, in one embodiment, there is provided a method comprising depositing a layer of nitride on a substrate, applying a photolithographic mask on the layer of nitride t... | 06/29/2010 |
| 7737017 | Semiconductor device having recess gate and isolation structure and method for fabricating the same Disclosed herein is a semiconductor device including an isolation structure and a recess gate and a method for fabricating the same. The method for fabricating a semiconductor device includes: forming a trench by selectively etching an isolation region of a semicond... | 06/15/2010 |
| 7727870 | Method of making a semiconductor device using a stressor A method for forming a semiconductor device includes providing a substrate and forming a p-channel device and an n-channel device, each of the p-channel device and the n-channel device comprising a source, a drain, and a gate, the p-channel device having a first sid... | 06/01/2010 |
| 7696075 | Method of fabricating semiconductor device having a recess channel structure therein A method of fabricating a semiconductor device having a recess channel structure is provided. A first recess is formed in a substrate. A liner and a filling layer are formed in the first recess. A portion of the substrate adjacent to the first recess and a portion o... | 04/13/2010 |
| 7687388 | Method of fabricating semiconductor high-voltage device comprising the steps of using photolithographic processes to form nitride spacer regions and dry etch process to form deep trench regions A semiconductor high-voltage device including a semiconductor substrate having a deep trench formed therein, a gate oxide film formed on sidewalls of the deep trench, a polysilicon layer formed in the deep trench and on the gate oxide film, and spacers formed on sid... | 03/30/2010 |
| 7678676 | Method for fabricating semiconductor device with recess gate A method for fabricating a semiconductor device with a recess gate includes providing a substrate, forming an isolation layer over the substrate to define an active region, forming mask patterns with a first width opening exposing a region where recess patterns are ... | 03/16/2010 |
| 7629242 | Method for fabricating semiconductor device having recess gate A method for fabricating a semiconductor device having a recess gate includes forming a hard mask pattern on a substrate, etching the substrate using the hard mask pattern as an etch barrier to form a recess pattern, forming a passivation layer protecting surfaces o... | 12/08/2009 |
| 7625813 | Method of fabricating recess channel in semiconductor device A method of fabricating a recess channel in a semiconductor device includes forming a hard mask pattern over a substrate, etching the substrate using the hard mask pattern to form first recesses, forming an insulation layer over the hard mask pattern and the first r... | 12/01/2009 |
| 7618885 | Semiconductor device having a recess channel and method for fabricating the same Provided is a semiconductor device having recess channel, comprising a semiconductor substrate having first and second trenches disposed to cross each other on both sides of an active region among adjoining regions between an active region and element-isolation film... | 11/17/2009 |
| 7579265 | Method for manufacturing recess gate in a semiconductor device A method for manufacturing a recess gate in a semiconductor device includes forming a device isolation structure on a substrate to define an active region, forming a hard mask pattern over the substrate to selectively expose at least a portion of the active region, ... | 08/25/2009 |
| 7566645 | Semiconductor device and method for fabricating the same A method for fabricating a semiconductor device is provided. In the method, a bulb type recess is formed on a semiconductor substrate in an active region. A gate insulating film is formed over the semiconductor substrate and on a surface of the recess. A first polys... | 07/28/2009 |
| 7563699 | Semiconductor devices having line type active regions and methods of fabricating the same In a semiconductor device having line type active regions and a method of fabricating the semiconductor device, the semiconductor device includes a device isolation layer which defines the line type active regions in a in a semiconductor substrate. Gate electrodes w... | 07/21/2009 |
| 7534708 | Recessed-type field effect transistor with reduced body effect For fabricating a field effect transistor, an extra-doped channel region is formed below a surface of a semiconductor substrate. An opening is formed in the semiconductor substrate into the extra-doped channel region. A gate insulator is formed at walls of the openi... | 05/19/2009 |
| 7531438 | Method of fabricating a recess channel transistor A method of fabricating a recess channel transistor is provided. First, a hard mask is formed on a doped-semiconductor layer and a substrate. The doped-semiconductor layer and the substrate are etched to form a trench and define a source/drain in the doped-semicondu... | 05/12/2009 |
| 7517779 | Recessed drain extensions in transistor device A method of forming an integrated circuit transistor (50). The method provides a first semiconductor region (52) and forms (110) a gate structure (54x) in a fixed position relative to the first semiconductor region. The gate st... | 04/14/2009 |
| 7510955 | Method of fabricating multi-fin field effect transistor A multi-fin field effect transistor includes a substrate, an oxide layer, a conductive layer, a gate oxide layer, and a doped region is provided. The substrate is surrounded by a trench, and there are at least two fin-type silicon layers formed in the substrate in a... | 03/31/2009 |
| 7501334 | Semiconductor devices having a pocket line and methods of fabricating the same In one embodiment, a semiconductor device comprises an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface. A molding hole is placed in the semiconductor substrate on the active region. A pocket insulating lay... | 03/10/2009 |
