Did You Know...
...that a workman who left the soap mixing machine on too long was responsible for making Ivory Soap? He was so embarrassed by his mistake that he threw the mess in a stream. Imagine his dismay when the evidence of his error floated to the surface! Result: Ivory soap, the soap that floats.
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| Number | Title | Issue Date |
| 8187960 | Method of joining and method of fabricating an organic light emitting diode display device using the same A method of joining a flexible layer and a support includes forming a first metal layer on one surface of the flexible layer, forming a second metal layer on one surface of the support, cleaning the first metal layer and the second metal layer, and joining the first... | 05/29/2012 |
| 8183138 | Methods for forming nanodots and/or a patterned material during the formation of a semiconductor device Methods for forming nanodots and/or a patterned material are provided. One such method involves forming a first patterning material over a base. Blades of a nanoimprint lithography template are placed within the first patterning material, wherein the blades extend a... | 05/22/2012 |
| 8158499 | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating thin film transistor substrate Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate, and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including copper nitride and a copper conducti... | 04/17/2012 |
| 8119508 | Forming integrated circuits with replacement metal gate electrodes In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the ... | 02/21/2012 |
| 8084343 | Semiconductor device In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an int... | 12/27/2011 |
| 8067304 | Method for forming a patterned thick metallization atop a power semiconductor chip A method is disclosed for forming a patterned thick metallization atop a semiconductor chip wafer. The method includes fabricating a nearly complete semiconductor chip wafer ready for metallization; depositing a bottom metal layer of sub-thickness TK1 togethe... | 11/29/2011 |
| 8039379 | Nanoparticle cap layer Functionalized nanoparticles are deposited on metal lines inlaid in dielectric to form a metal cap layer that reduces electromigration in the metal line. The functionalized nanoparticles are deposited onto activated metal surfaces, then sintered and annealed to remo... | 10/18/2011 |
| 8039380 | Procedure for obtaining nanotube layers of carbon with conductor or semiconductor substrate The present invention relates to a process for producing a carbon nanotube (CNT) mat on a conductive or semiconductor substrate. According to this process, a catalytic complex comprising at least one metal layer is firstly deposited on said substrate. Said metal lay... | 10/18/2011 |
| 8030194 | Spray method for producing semiconductor nano-particles A method is provided for producing semiconductor nanoparticles comprising: (i) dissolving a semiconductor compound or mixture of semiconductor compounds in a solution; (ii) generating spray droplets of the resulting solution of semiconductor compound(s); (iii) vapor... | 10/04/2011 |
| 7994034 | Temperature and pressure control methods to fill features with programmable resistance and switching devices A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom electrode layer, an insulative layer having an opening formed therein, an active material layer d... | 08/09/2011 |
| 7989330 | Dry etching method After etching a polysilicon film, when a protective film made of a carbon polymer is formed on a sidewall of the polysilicon film using plasma containing carbons, a metallic material as a lower film is etched using plasma containing a halogen gas under an etching co... | 08/02/2011 |
| 7955962 | Method of reducing contamination by providing a removable polymer protection film during microstructure processing By providing a protective layer in an intermediate manufacturing stage, an increased surface protection with respect to particle contamination and surface corrosion may be achieved. In some illustrative embodiments, the protective layer may be used during an electri... | 06/07/2011 |
| 7947586 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device is disclosed, wherein a plating layer is formed on a first surface side of a semiconductor substrate stably and at a low cost, while preventing the plating liquid from being contaminated and avoiding deposition of une... | 05/24/2011 |
| 7927992 | Carbon nanotubes for the selective transfer of heat from electronics Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the ... | 04/19/2011 |
| 7927991 | Method for manufacturing semiconductor device In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a lay... | 04/19/2011 |
| 7927990 | Forming complimentary metal features using conformal insulator layer A method is provided to form densely spaced metal lines. A first set of metal lines is formed by etching a first metal layer. A thin dielectric layer is conformally deposited on the first metal lines. A second metal is deposited on the thin dielectric layer, filling... | 04/19/2011 |
| 7875539 | Semiconductor device In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an int... | 01/25/2011 |
| 7871909 | Methods of using single spacer to triple line/space frequency Methods for forming patterns having triple the line frequency of a first pattern using only a single spacer are disclosed. For example, the first pattern is formed in a first and a second material using a lithographic process. Sidewall spacers are formed from a thir... | 01/18/2011 |
| 7863173 | Variable resistance non-volatile memory cells and methods of fabricating same Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening ... | 01/04/2011 |
| 7858507 | Method and system for creating photosensitive array with integrated backplane A method of fabricating a photoactive array having an integrated backplane is provided. The layers of the device may be stamped or deposited on a planar or a curved substrate, such as a semispherical or ellipsoidal substrate. Each metal layer may be stamped using an... | 12/28/2010 |
| 7846824 | Methods for forming a titanium nitride layer Methods for forming titanium nitride layers are provided herein. In some embodiments, a method of forming a titanium nitride layer on a substrate may include providing a substrate into a processing chamber having a target comprising titanium disposed therein; supply... | 12/07/2010 |
| RE41975 | Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of... | 11/30/2010 |
| 7838403 | Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices Techniques for fabricating a photovoltaic device having a chalcopyrite absorber layer, such as a copper indium gallium selenide/sulfide (CIGSS) absorber layer, are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includ... | 11/23/2010 |
| 7820535 | Method for analyzing copper electroplating solution, apparatus for the analysis, and method for fabricating semiconductor product Effective fillability and the uniformity electrodeposition of a copper electroplating solution is judged by determining the time-dependent potential change thereof at a cathode current density of 0.1-20 A/dm2. The potential change is determined at a worki... | 10/26/2010 |
| 7820536 | Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently remov... | 10/26/2010 |
| 7811918 | Electric current induced liquid metal flow and metallic conformal coating of conductive templates A conformal metallic layer is applied to a selected region of a substrate by forming a pattern of electrically conductive lines on the substrate, placing a bead of a selected metal on the substrate at an edge of the region selected for coating, and passing an electr... | 10/12/2010 |
| 7790590 | Selective W-CVD method and method for forming multi-layered Cu electrical interconnection A substrate provided thereon with an electrical insulating film which carries holes or the like filled with a Cu-containing electrical interconnection film is subjected to a pre-treatment in which the surface of the electrical insulating film and that of the Cu-cont... | 09/07/2010 |
| 7781318 | Semiconductor device and method of manufacturing the same Disclosed are a semiconductor device and a method for manufacturing the same, capable of improving the performance of a barrier and inhibiting a discontinuous step coverage and an overhang. The semiconductor device includes an interlayer dielectric layer having a vi... | 08/24/2010 |
| 7781317 | Method of non-catalytic formation and growth of nanowires A method for the non-catalytic growth of nanowires is provided. The method includes a reaction chamber with the chamber having an inlet end, an exit end and capable of being heated to an elevated temperature. A carrier gas with a flow rate is allowed to enter the re... | 08/24/2010 |
| 7776728 | Rapid thermal process method and rapid thermal process device A rapid thermal process method contains providing a substrate, performing a pre-heating process to at least a first portion of the substrate by means of a first laser beam, and performing a rapid heating process to the pre-heated first portion of the substrate by me... | 08/17/2010 |
| 7759232 | Method of forming damascene patterns of semiconductor devices A method of forming damascene patterns of semiconductor devices comprise forming a first insulating layer and contact plugs, formed in the first insulating layer, over a semiconductor substrate, forming an etch barrier layer and a second insulating layer over the fi... | 07/20/2010 |
| 7749878 | Method for manufacturing a semiconductor device Embodiments relate to a method for manufacturing a semiconductor device that may be capable of obtaining a stable device characteristic by securing an optimal CD of a gate. In embodiments, a method may include forming a gate oxide layer on a semiconductor substrate,... | 07/06/2010 |
| 7732315 | Methods of fabricating semiconductor devices and structures thereof Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first insulating material over the semiconductor wafer,... | 06/08/2010 |
| 7732314 | Method for depositing a diffusion barrier for copper interconnect applications Methods for forming a metal diffusion barrier on an integrated circuit include at least four operations. The first operation deposits barrier material via PVD, ALD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material ... | 06/08/2010 |
| 7727869 | Method of forming metal wiring and method of manufacturing active matrix substrate A method of forming a metal wiring includes: forming a foundation layer on a substrate; applying a solution including fine metal particles and a dispersion stabilizer on the foundation layer; and heating the applied solution to form into a conductive layer, wherein ... | 06/01/2010 |
| 7666773 | Selective deposition of noble metal thin films Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a hi... | 02/23/2010 |
| 7655547 | Metal spacer in single and dual damascene processing A method and structure for a single or dual damascene interconnect structure comprises forming wiring lines in a metallization layer over a substrate, shaping a laminated insulator stack above the metallization layer, patterning a hardmask over the laminated insulat... | 02/02/2010 |
| 7651934 | Process for electroless copper deposition Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition p... | 01/26/2010 |
| 7622375 | Conductive member and process of producing the same Provided are a method of manufacturing an electrically conductive member having excellent properties and such electrically conductive member. A method of manufacturing an electrically conductive member having an electrically conductive film on a surface of a substra... | 11/24/2009 |
| 7615474 | Method for manufacturing semiconductor device with reduced damage to metal wiring layer A method for manufacturing a semiconductor device includes (a) forming a conductive film on a first surface having an electrode of a semiconductor substrate having an integrated circuit formed therein, the electrode being electrically coupled to the integrated circu... | 11/10/2009 |
