Class 438/582 - Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for forming the contact using a refractory metal
No. of patents: 115
Last issue date: 10/18/2011

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Number	Title	Issue Date
8039378	Method of manufacturing a semiconductor device To provide a technique capable of improving the reliability of a semiconductor element and its product yield by reducing the variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substr...	10/18/2011
8003504	Structure and method for fabrication of field effect transistor gates with or without field plates A method for fabrication of a field effect transistor gate, with or without field plates, includes the steps of defining a relatively thin Schottky metal layer by a lithography/metal liftoff or metal deposition/etch process on a semiconductor surface. This is follow...	08/23/2011
7902056	Plasma treated metal silicide layer formation Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally trea...	03/08/2011
7491633	High switching speed two mask schottky diode with high field breakdown A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device includes a LOCOS structure grown on the bottom of the trenches by using nitride spacer on the sidewall of the trenches as a thermal oxidation mask. A polycry...	02/17/2009
7435670	Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of a substrate so as to expose a...	10/14/2008
7384800	Method of fabricating metal-insulator-metal (MIM) device with stable data retention In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta...	06/10/2008
7378310	Method for manufacturing a memory device having a nanocrystal charge storage region A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first...	05/27/2008
7371667	Semiconductor device and method of fabricating same There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/d...	05/13/2008
7366344	Edge normal process An edge inspection method for detecting defects on a wafer edge normal surface includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a ...	04/29/2008
7323402	Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination...	01/29/2008
7300876	Method for cleaning slurry particles from a surface polished by chemical mechanical polishing A method is provided to clean slurry particles from a surface in which tungsten and dielectric are coexposed after a dielectric CMP step. Such a surface is formed when tungsten features are patterned and etched, the tungsten features are covered with dielectric, and...	11/27/2007
7294565	Method of fabricating a wire bond pad with Ni/Au metallization A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN...	11/13/2007
7294241	Method to form alpha phase Ta and its application to IC manufacturing A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. pr...	11/13/2007
7291546	Method and apparatus for reducing charge loss in a nonvolatile memory cell A method of fabricating a non-volatile memory cell on a semiconductor substrate is disclosed. An area of a first region of the semiconductor substrate designated for a layer of floating polysilicon is blocked while a second region of the semiconductor substrate desi...	11/06/2007
7285482	Method for producing solid-state imaging device A method is provided for producing a solid-state imaging device in which a plurality of pixels are arranged two-dimensionally so as to form a photosensitive region, each of the pixels including a photodiode that photoelectrically converts incident light to store a s...	10/23/2007
7244658	Low stress STI films and methods The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive st...	07/17/2007
7211295	Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce...	05/01/2007
7211296	Chalcogenide glass nanostructures Chalcogenide nanowires and other micro-and nano scale structures are grown on a preselected portion of on a substrate. They are amorphous and of uniform composition and can be grown by a sublimation-condensation process onto the surface of an amorphous substrate. Am...	05/01/2007
7202147	Semiconductor device and method for fabricating the same A semiconductor device includes: a gate electrode formed on a silicon substrate; source/drain regions formed at both sides of the gate electrode in the silicon substrate; and a silicide layer formed on the source/drain regions. The silicide layer includes a first si...	04/10/2007
7190049	Nanocylinder arrays Pathways to rapid and reliable fabrication of nanocylinder arrays are provided. Simple methods are described for the production of well-ordered arrays of nanopores, nanowires, and other materials. This is accomplished by orienting copolymer films and removing a comp...	03/13/2007
7149341	Wafer inspection apparatus A wafer inspection apparatus has a supporting means (10) for rotatably supporting a wafer (W) formed of a disk, a circumferential edge imaging means (40) for imaging a circumferential edge (S) of the wafer (W) that is supported by the supporting means ...	12/12/2006
7141861	Semiconductor device and manufacturing method there A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is her...	11/28/2006
7135396	Method of making a semiconductor structure Methods of making a semiconductor structure are disclosed. A refractory metal layer containing W, TiW, Ta, or TaN and semiconductor layer are formed on a substrate that contains copper in, for example, a via therein. A portion of the refractory metal layer and semic...	11/14/2006
7098393	Thermoelectric device with multiple, nanometer scale, elements A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density. ...	08/29/2006
7098150	Method for novel deposition of high-k MSiON dielectric films This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current inven...	08/29/2006
7094678	Electrostatic discharge protection of thin-film resonators A filter having a thin-film resonator fabricated on a semiconductor substrate and a method of making the same are disclosed. The filter has a bonding pad connected to the resonator and in contact with the substrate to form a Schottky diode with the substrate to prot...	08/22/2006
7078325	Process for producing a doped semiconductor substrate A process is described which allows a buried, retrograde doping profile or a delta doping to be produced in a relatively simple and inexpensive way. The process uses individual process steps that are already used in the mass production of integrated circuits and acc...	07/18/2006
7049211	In-situ-etch-assisted HDP deposition using SiF A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma h...	05/23/2006
7029972	Method of manufacturing a metal-insulator-metal capacitor The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal l...	04/18/2006
7030013	Method for fabricating semiconductor device using high dielectric material Disclosed is a method for fabricating a semiconductor device using high dielectric material. The method comprises the steps of: forming an Hf thin film on a silicon substrate; oxidizing the Hf thin film by performing an oxidizing process; and performing an annealing...	04/18/2006
7012014	Recessed gate structure with reduced current leakage and overlap capacitance A gate structure and method for forming the same the method including providing a silicon substrate including one of N and P-well doped regions and an overlying the CVD silicon oxide layer; forming an opening in the CVD silicon oxide layer to include a recessed area...	03/14/2006
6964739	Device and method for generating and applying ozonated water The present invention is a device and method for ozonating water and applying the ozonated water to surfaces for cleaning purposes. The instant invention allows a user to transform water into a liquid with more robust cleaning properties conveniently and in a short ...	11/15/2005
6947588	Edge normal process An edge inspection method for detecting defects on a wafer edge normal surface includes acquiring a set of digital images which captures a circumference of the wafer. An edge of the wafer about the circumference is determined. Each digital image is segmented into a ...	09/20/2005
6936522	Selective silicon-on-insulator isolation structure and method A first aspect of the present invention is a method of forming an isolation structure including: (a) providing a semiconductor substrate; (b) forming a buried N-doped region in the substrate; (c) forming a vertical trench in the substrate, the trench extending into ...	08/30/2005
6905916	Method for processing a surface of an SiC semiconductor layer and Schottky contact A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out i...	06/14/2005
6902968	Method for manufacturing a MOS transistor that prevents contact spiking and semiconductor device employing a MOS transistor made using the same A method for manufacturing a metal-oxide-semiconductor transistor prevents the occurrence of a contact spiking phenomenon. The method includes forming a metal thin film and an isolation oxidation film on a semiconductor substrate, and selectively etching the isolati...	06/07/2005
6896976	Tin antimony solder for MOSFET with TiNiAg back metal A semiconductor device is disclosed containing a semiconductor die having a trimetal electrode soldered to a substrate by a Sn—Sb solder. ...	05/24/2005
6875676	Methods for producing a highly doped electrode for a field effect transistor A highly localized diffusion barrier is incorporated into a polysilicon line to allow the doping of the polysilicon layer without sacrificing an underlying material layer. The diffusion barrier is formed by depositing a thin polysilicon layer and exposing the layer ...	04/05/2005
6858522	Electrical contact for compound semiconductor device and method for forming same A method of manufacturing a semiconductor device having an improved ohmic contact system to epitaxially grown, low bandgap compound semiconductors. In an exemplary embodiment, the improved ohmic contact system comprises a thin reactive layer of nickel deposited on a...	02/22/2005
6855593	Trench Schottky barrier diode A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited w...	02/15/2005

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Class 438/582 - Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)