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| Number | Title | Issue Date |
| 7955961 | Process for manufacture of trench Schottky A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the steps of forming an epitaxial (EPI) layer atop a silicon substrate, forming a nitride layer atop the EPI lay... | 06/07/2011 |
| 7320942 | Method for removal of metallic residue after plasma etching of a metal layer A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution. ... | 01/22/2008 |
| 7317231 | Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrode A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected tempera... | 01/08/2008 |
| 7312160 | Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential. ... | 12/25/2007 |
| 7276796 | Formation of oxidation-resistant seed layer for interconnect applications An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present inv... | 10/02/2007 |
| 7176090 | Method for making a semiconductor device that includes a metal gate electrode A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider... | 02/13/2007 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer. ... | 01/09/2007 |
| 7157378 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, forming a trench within the dielectric layer, and forming a high-k gate dielectric layer within the trench. After forming a first metal layer on... | 01/02/2007 |
| 7157383 | Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon subs... | 01/02/2007 |
| 7148548 | Semiconductor device with a high-k gate dielectric and a metal gate electrode A semiconductor device is described that comprises a gate dielectric and a metal gate electrode that comprises an aluminide. ... | 12/12/2006 |
| 7105065 | Metal layer forming methods and capacitor electrode forming methods A capacitor electrode forming method includes chemisorbing a layer of at least one metal precursor at least one monolayer thick on a substrate, the layer including non-metal components from the precursor. The chemisorbed layer can be treated with an oxidant and the ... | 09/12/2006 |
| 7084038 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperat... | 08/01/2006 |
| 7074680 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperat... | 07/11/2006 |
| 7064066 | Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected tempera... | 06/20/2006 |
| 6953701 | Process for sharpening tapered silicon structures A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a rel... | 10/11/2005 |
| 6929831 | Methods of forming nitride films A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride fi... | 08/16/2005 |
| 6924195 | Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to rele... | 08/02/2005 |
| 6921710 | Technique for high efficiency metalorganic chemical vapor deposition A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced int... | 07/26/2005 |
| 6905974 | Methods using a peroxide-generating compound to remove group VIII metal-containing residue A method for cleaning substrates to remove Group VIII metal-containing, particularly platinum-containing, residue using a cleaning composition that includes a peroxide-generating compound. ... | 06/14/2005 |
| 6872644 | Semiconductor device with non-compounded contacts, and method of making A semiconductor device includes source and drain contact regions which include a non-compounded combination of a semiconductor material and at least one metal. The metal may include an elemental metal, such as gold or aluminum, or may include an intermetallic. The c... | 03/29/2005 |
| 6852612 | Semiconductor device and method for fabricating the same The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon. ... | 02/08/2005 |
| 6846731 | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substr... | 01/25/2005 |
| 6825073 | Schottky diode with high field breakdown and low reverse leakage current A Schottky diode structure and a method of making the same are disclosed. The method comprises following steps: firstly, a semiconductor substrate having a first conductive layer and an epi-layer doped with the same type impurities is provided. Then a first oxide la... | 11/30/2004 |
| 6809212 | Method for producing organometallic compounds This invention relates to liquid cyclopentadienyltrimethylplatinum compounds selected from (isopropylcyclopentadienyl)trimethylplatinum and (tert-butylcyclopentadienyl)trimethylplatinum. This invention also relates to a process for producing a film, coating or powde... | 10/26/2004 |
| 6734086 | Semiconductor integrated circuit device and method of manufacturing the same A WN film serving as an adhesive layer is deposited over the sidewalls and bottom surface of a hole in a silicon oxide film where an information storage capacitor is to be formed. A Ru film to serve as a lower electrode for the information storage capacitor is forme... | 05/11/2004 |
| 6727194 | Wafer batch processing system and method A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heatin... | 04/27/2004 |
| 6699775 | Manufacturing process for fast recovery diode A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two spaced silicon dioxide rings used in the definition of the two ... | 03/02/2004 |
| 6683001 | Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is pretreated at a first temperature so that an upper surface of the... | 01/27/2004 |
| 6656823 | Semiconductor device with schottky contact and method for forming the same Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as Alx Ga1-x N and Inx Ga1-x N. At least one metal layer includ... | 12/02/2003 |
| 6551932 | Method for forming metal line in a semiconductor device A method for forming a metal line of a semiconductor device is disclosed, in which a Cu thin film is deposited on a diffusion barrier film after a chemical enhancer and plasma are applied thereon, thereby improving fill characteristics of a contact hole h... | 04/22/2003 |
| 6509234 | Method of fabricating an ultra-thin fully depleted SOI device with T-shaped gate A method of forming a fully depleted semiconductor-on-insulator (SOI) field effect transistor (FET). The method includes forming a T-shaped gate electrode formed at least in part in a recess formed in a layer of semiconductor material and over a body regi... | 01/21/2003 |
| 6506676 | Method of manufacturing semiconductor devices with titanium aluminum nitride work function A method of manufacturing semiconductor devices forms a surface channel CMOSFET in the process of manufacturing a metal gate. The method forms a (Tix Aly)1-z Nz film (where z ranges from about 0.0 to about 0.2) ... | 01/14/2003 |
| 6495423 | Electronic power device monolithically integrated on a semiconductor and comprising edge protection structures having a limited planar dimension An electronic power device is integrated monolithically in a semiconductor substrate. The device includes a power region, itself having at least one P/N junction provided therein which comprises a first semiconductor region with a first type of conductivi... | 12/17/2002 |
| 6486524 | Ultra low Irr fast recovery diode A FRED device having an ultralow Irr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P diffusions. The contact layer is formed of a contact hav... | 11/26/2002 |
| 6448162 | Method for producing schottky diodes A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor l... | 09/10/2002 |
| 6372616 | Method of manufacturing an electrical interconnection of a semiconductor device using an erosion protecting plug in a contact hole of interlayer dielectric layer A method of manufacturing an electrical interconnection of a semiconductor device produces an erosion protecting plug in a contact hole to protect a selected portion of an interlayer dielectric layer when the interlayer dielectric layer is being etched to... | 04/16/2002 |
| 6313539 | Semiconductor memory device and production method of the same A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical c... | 11/06/2001 |
| 6303479 | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts The present invention Is a fabrication method for a short-channel Schottky-barrier field-effect transistor device. The method of the present invention includes introducing channel dopants into a semiconductor substrate such that the dopant concentration v... | 10/16/2001 |
| 6271131 | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula Ly RhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and elec... | 08/07/2001 |
| 6268230 | Semiconductor light emitting device By providing an area where an Au film 28b is removed and a Ti film 28a is exposed along the plane tangent to the side where the p-n junction of a semiconductor chip is exposed, sticking of the Au film 28b to the chip side or protruding of the film as a fl... | 07/31/2001 |
