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| Number | Title | Issue Date |
| 4311870 | Efficiency of silicon solar cells containing chromium Efficiency of silicon solar cells containing about 1015 atoms/cm3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200° C. to form chromium precipitates having a diameter of less than 1... | 01/19/1982 |
| 4257827 | High efficiency gettering in silicon through localized superheated melt formation A semiconductor wafer into which devices such as an integrated circuit is to be formed is gettered by regions in the wafer activated by a laser beam. The laser beam is directed onto the surface of the wafer opposite to that where the devices are to be for... | 03/24/1981 |
| 4155785 | Process of making a radiation responsive device The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial disl... | 05/22/1979 |
| 4152535 | Continuous process for fabricating solar cells and the product produced thereby The process comprises the following steps: (1) forming a glass sheet which defines a substrate layer for the solar cell product; (2) forming a diffusion barrier layer on at least one surface of the substrate; (3) forming a first electrically-conductive la... | 05/01/1979 |
| 4127932 | Method of fabricating silicon photodiodes Described is a method of fabricating front-illuminated silicon photodiodes having high quantum efficiency, a short response time, (high gain and low excess noise in the case of avalanche diodes), low dark currents and good reliability. In the fabrication ... | 12/05/1978 |
| 4062038 | Radiation responsive device The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial disl... | 12/06/1977 |
| 4009058 | Method of fabricating large area, high voltage PIN photodiode devices The body of a PIN photodiode is of a silicon semiconductor material. The PIN photodiode has a large area incident surface on which light impinges and is operated at high voltages. In the fabrication of a PIN photodiode, as described, a high concentration ... | 02/22/1977 |
