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| Number | Title | Issue Date |
| 7964486 | Field effect transistor and method for fabricating the same A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky... | 06/21/2011 |
| 7919404 | Method of manufacturing semiconductor device including forming a t-shape gate electrode The present invention provides a method of manufacturing a semiconductor device, which comprises the steps of: forming a buffer layer formed of a dual-layer structure of a buffer oxide film and a buffer nitride film on a semiconductor substrate formed with a certain... | 04/05/2011 |
| 7541267 | Reversed T-shaped finfet A method includes forming a first rectangular mesa from a layer of semiconducting material and forming a first dielectric layer around the first mesa. The method further includes forming a first rectangular mask over a first portion of the first mesa leaving an expo... | 06/02/2009 |
| 7534706 | Recessed poly extension T-gate A method is provided for making a silicided gate in a semiconductor device. In accordance with the method, a gate (213) is provided which comprises a first portion (214) and a second portion (213). The first portion of the gate has a width w | 05/19/2009 |
| 7479445 | Methods of forming field effect transistors having t-shaped gate electrodes using carbon-based etching masks Methods of forming field effect transistors include forming a first electrically insulating layer comprising mostly carbon on a surface of a semiconductor substrate and patterning the first electrically insulating layer to define an opening therein. A trench is form... | 01/20/2009 |
| 7413942 | T-gate formation Methods of forming T-gate structures on a substrate are provided that use only UV-sensitive photoresists. Such methods provide T-gate structures using two lithographic steps using a single wavelength of radiation. ... | 08/19/2008 |
| 7387955 | Field effect transistor and method for manufacturing the same A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and... | 06/17/2008 |
| 7335542 | Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ... | 02/26/2008 |
| 7282423 | Method of forming fet with T-shaped gate An FET has a T-shaped gate. The FET has a halo diffusion self-aligned to the bottom portion of the T and an extension diffusion self aligned to the top portion. The halo is thereby separated from the extension implant, and this provides significant advantages. The t... | 10/16/2007 |
| 7256455 | Double gate semiconductor device having a metal gate A semiconductor device may include a substrate, an insulating layer formed on the substrate and a conductive fin formed on the insulating layer. The conductive fin may include a number of side surfaces and a top surface. The semiconductor device may also include a s... | 08/14/2007 |
| 7250645 | Reversed T-shaped FinFET A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfaces of the fin and a gate for... | 07/31/2007 |
| 7229903 | Recessed semiconductor device A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A f... | 06/12/2007 |
| 7223645 | Semiconductor device with mushroom electrode and manufacture method thereof A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed ... | 05/29/2007 |
| 7214991 | CMOS inverters configured using multiple-gate transistors An inverter that includes a first multiple-gate transistor including a source connected to a power supply, a drain connected to an output terminal, and a gate electrode; a second multiple-gate transistor including a source connected to a ground, a drain connected to... | 05/08/2007 |
| 7208399 | Transistor with notched gate A transistor having a gate electrode with a T-shaped cross section is fabricated from a single layer of conductive material using an etching process. A two process etch is performed to form side walls having a notched profile. The notches allow source and drain regi... | 04/24/2007 |
| 7172943 | Multiple-gate transistors formed on bulk substrates In one aspect, the present invention teaches a multiple-gate transistor 130 that includes a semiconductor fin 134 formed in a portion of a bulk semiconductor substrate 132. A gate dielectric 144 overlies a portion of the semiconductor fin... | 02/06/2007 |
| 7160766 | Field-effect semiconductor device and method for making the same A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN,... | 01/09/2007 |
| 7148145 | Semiconductor device having T-shaped gate structure comprising in situ sidewall spacers and method of forming the semiconductor device Polysilicon lines are formed, featuring an upper portion extending beyond the lower portion that defines the required CD. Accordingly, metal silicide layers of increased dimensions can be formed on the upper portion of the polysilicon lines so that the resulting gat... | 12/12/2006 |
| 7141856 | Multi-structured Si-fin Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produc... | 11/28/2006 |
| 7135416 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device including a gallium nitride related semiconductor. The method include preparing a substrate having surface of a gallium nitride related semiconductor; contacting the surface with atomic nitrogen, which is obtained by ... | 11/14/2006 |
| 7084018 | Sacrificial oxide for minimizing box undercut in damascene FinFET A method of reducing buried oxide undercut during FinFET formation includes forming a fin on a buried oxide layer and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a s... | 08/01/2006 |
| 7084021 | Method of forming a structure wherein an electrode comprising a refractory metal is deposited The presently disclosed technology provides a method for forming a structure wherein an electrode, such as a gate, comprising a refractory metal is deposited. The method comprises depositing a plurality of electron sensitive resist layers on the substrate. Several o... | 08/01/2006 |
| 7074623 | Methods of forming strained-semiconductor-on-insulator finFET device structures The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 07/11/2006 |
| 7074679 | Methods of fabricating self-aligned source of flash memory device Example methods of fabricating semiconductor devices are disclosed. One example method may include depositing an oxide layer, a first conducting layer for a floating gate, a dielectric layer, and a second conducting layer for a control gate in sequence on a semicond... | 07/11/2006 |
| 7071064 | U-gate transistors and methods of fabrication A process is described for manufacturing of non-planar multi-corner transistor structures. A fin of a semiconductor material having a mask on a top surface of the fin is formed on a first insulating layer. A second insulating layer is formed on the fin exposing a to... | 07/04/2006 |
| 7060629 | Etch of silicon nitride selective to silicon and silicon dioxide useful during the formation of a semiconductor device A method for etching silicon nitride selective to silicon dioxide and silicon (polycrystalline silicon or monocrystalline silicon) comprises the use of oxygen along with an additional etchant of either CHF3 or CH2F2. Flow rates, powe... | 06/13/2006 |
| 7049662 | Structure and method to fabricate FinFET devices There is provided a method for fabricating a FinFET in which a self-limiting reaction is employed to produce a unique and useful structure that may be detectable with simple failure analysis techniques. The structure is an improved vertical fin with a gently sloping... | 05/23/2006 |
| 7041542 | Damascene tri-gate FinFET A method of forming a fin field effect transistor includes forming a fin and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a dummy gate over the fin and forming a diel... | 05/09/2006 |
| 7037792 | Formation of removable shroud by anisotropic plasma etch Isotropic etching of sacrificial oxide that is adjacent to a trench fill step in an STI wafer can lead to undesired etching away of a sidewall of the trench fill material (e.g., HDP oxide). A sidewall protecting method conformably coats the trench fill step and sacr... | 05/02/2006 |
| 7002187 | Integrated schottky diode using buried power buss structure and method for making same An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a ... | 02/21/2006 |
| 6967175 | Damascene gate semiconductor processing with local thinning of channel region A method of manufacturing a semiconductor device may include forming a fin on an insulator and forming a gate oxide on sides of the fin. The method may also include forming a gate structure over the fin and the gate oxide and forming a dielectric layer adjacent the ... | 11/22/2005 |
| 6949389 | Encapsulation for organic light emitting diodes devices An embodiment of an encapsulated OLED device is described. This embodiment of the encapsulated OLED device is formed by: fabricating multiple OLED devices on a substrate; depositing at least one planarization layer on the OLED devices; hardening the at least one pla... | 09/27/2005 |
| 6884669 | Hatted polysilicon gate structure for improving salicide performance and method of forming the same Alternate methods of forming low resistance “hatted” polysilicon gate elements are provided that increase the effective area in the polysilicon gate for silicide grain growth during silicide formation. The expanded top portion helps to prevent silicide agglomera... | 04/26/2005 |
| 6861729 | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting subst... | 03/01/2005 |
| 6835635 | Electrode forming method and field effect transistor A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor... | 12/28/2004 |
| 6784081 | Gate structure forming method of field effect transistor A method of forming a gate structure includes forming sequentially a pad layer and a first photoresist layer over a substrate. A cross-linked surface layer is formed on the surface of the first photoresist layer, followed by rounding the profile of the first photore... | 08/31/2004 |
| 6784036 | Method for making semiconductor device A method for making a semiconductor device includes forming a resist pattern having a multi-layered structure by performing a plurality of development steps, the resist pattern including a first opening corresponding to a fine gate section of a gate electrode and a ... | 08/31/2004 |
| 6780694 | MOS transistor A method of fabricating a semiconductor transistor device comprises the steps as follows. Provide a semiconductor substrate with a gate dielectric layer thereover and a lower gate electrode structure formed over the gate dielectric layer with the lower gate electrod... | 08/24/2004 |
| 6770552 | Method of forming a semiconductor device having T-shaped gate structure The cross-sectional area of polysilicon lines is increased by selectively epitaxially growing an upper portion of the polysilicon line in the presence of a dielectric layer exposing the upper portion. Thus, a substantially T-shaped line is obtained, allowing a minim... | 08/03/2004 |
| 6730586 | Semiconductor device having an overhanging structure and method for fabricating the same An edge of a passivation film is positioned inside an edge of an overhanging emitter structure by a distance L so that a base electrode layer is formed at an interval not to overlap the edge of the passivation film even when the base electrode layer is formed by etc... | 05/04/2004 |
