Did You Know...
...that after Parker Brothers executives turned down the game of Monopoly because it had "52 fundamental errors" (including taking too long to play), a copy of the game wound up in the home of the company president who stayed up until 1 a.m. to finish playing it? He was so impressed by the game that the next day he wrote to inventor Charles Darrow and offered to buy it!
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| Number | Title | Issue Date |
| 8138073 | Method for forming a Schottky diode having a metal-semiconductor Schottky contact A method for forming a metal-semiconductor Schottky contact in a well region is provided. The method includes forming a first insulating layer overlying a shallow trench isolation in the well region; and removing a portion of the first insulating layer such that onl... | 03/20/2012 |
| 8084342 | Method of manufacturing a CMOS device with zero soft error rate A CMOS device and method of manufacture is provided for producing an integrated circuit that is not susceptible to various soft errors such as single-event upsets, multi-bit upsets or single-event latchup. The CMOS device and method utilizes a new and novel well arc... | 12/27/2011 |
| 7923362 | Method for manufacturing a metal-semiconductor contact in semiconductor components A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art methods. In the disclosed method, the actual metal -semiconductor or S... | 04/12/2011 |
| 7884002 | Method of fabricating self aligned Schottky junctions for semiconductor devices A method of fabricating a self-aligned Schottky junction (29) in respect of a semiconductor device. After gate etching and spacer formation, a recess defining the junction regions is formed in the Silicon substrate (10) and a SiGe layer (22) is ... | 02/08/2011 |
| 7884003 | Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow ... | 02/08/2011 |
| 7879705 | Semiconductor devices and manufacturing method thereof A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained... | 02/01/2011 |
| 7759231 | Method for producing metal/semiconductor contacts through a dielectric A method of forming contacts between at least one metallic layer and at least one semiconductor substrate through at least one layer of dielectric in a semiconductor device. The semiconductor device includes, on at least one base face of the semiconductor substrate,... | 07/20/2010 |
| 7745317 | Semiconductor device and method of manufacturing the same A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 06/29/2010 |
| 7618884 | Method and device with durable contact on silicon carbide A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky con... | 11/17/2009 |
| 7419862 | Method of fabricating pseudomorphic high electron mobility transistor Provided is a method of fabricating a pseudomorphic high electron mobility transistor (PHEMT). The method includes the steps of: preparing a substrate including a channel layer and a capping layer that is the uppermost layer; forming a source and a drain on the capp... | 09/02/2008 |
| 7368371 | Silicon carbide Schottky diode and method of making the same A method of forming silicon carbide Schottky diode is disclosed. The processes required two photo-masks only. The processes are as follows: firstly, an n+-silicon carbide substrate having an n− silicon carbide drift layer is provided. Then a silicon layer is forme... | 05/06/2008 |
| 7361535 | Liquid crystal display device having polycrystalline TFT and fabricating method thereof A thin film transistor includes a substrate, a crystallized semiconductor layer formed over the substrate having a channel region, low-density impurity regions and high-density impurity regions, a gate insulating layer formed on the crystallized semiconductor layer,... | 04/22/2008 |
| 7352017 | Nitride semiconductor device and manufacturing method thereof A nitride semiconductor device enabiling to supress current collapse and manufacturing method thereof including a III-V group nitride semiconductor layer formed of III group elements includes at least one element from the group consisting of gallium, aluminum, boron... | 04/01/2008 |
| 7332365 | Method for fabricating group-III nitride devices and devices fabricated using method A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epita... | 02/19/2008 |
| 7314834 | Semiconductor device fabrication method A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a surface resist layer thereover; performs patterned-light exposure and... | 01/01/2008 |
| 7309660 | Buffer layer for selective SiGe growth for uniform nucleation Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed. ... | 12/18/2007 |
| 7294858 | Semiconductor device and method of manufacturing the same A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 11/13/2007 |
| 7282778 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 10/16/2007 |
| 7274082 | Chemical sensor using chemically induced electron-hole production at a schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 09/25/2007 |
| 7262434 | Semiconductor device with a silicon carbide substrate and ohmic metal layer A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy an... | 08/28/2007 |
| 7241694 | Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate A method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a trench mask on an upper surface of a semiconductor substrate; forming the trench such that the trench having an aspect ratio equal to or larger than 2 and having a tre... | 07/10/2007 |
| 7229874 | Method and apparatus for allowing formation of self-aligned base contacts A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a ma... | 06/12/2007 |
| 7229903 | Recessed semiconductor device A semiconductor structure includes a first semiconductor layer, a second semiconductor layer over the first semiconductor layer, a third semiconductor layer over the second semiconductor layer, and a fourth semiconductor layer over the third semiconductor layer. A f... | 06/12/2007 |
| 7227212 | Method of forming a floating metal structure in an integrated circuit In one embodiment, a sacrificial layer is deposited over a base layer. The sacrificial layer is used to define a subsequently formed floating metal structure. The floating metal structure may be anchored into the base layer. Once the floating metal structure is form... | 06/05/2007 |
| 7205228 | Selective metal encapsulation schemes A method and system of processing a semiconductor substrate includes, in one or more embodiments, depositing a protective layer on the substrate surface comprising a conductive element disposed in a dielectric material; processing the protective layer to expose the ... | 04/17/2007 |
| 7195996 | Method of manufacturing silicon carbide semiconductor device A manufacturing method for forming a region into which impurity ions are implanted, and an electrode is coupled to the region, in a self-aligned manner. An oxide film is formed on an n-type semiconductor layer composed of a silicon carbide semiconductor, and then th... | 03/27/2007 |
| 7192827 | Methods of forming capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 03/20/2007 |
| 7173285 | Lithographic methods to reduce stacking fault nucleation sites Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., obliq... | 02/06/2007 |
| 7172933 | Recessed polysilicon gate structure for a strained silicon MOSFET device A method of forming a channel region for a MOSFET device in a strained silicon layer via employment of adjacent and surrounding silicon-germanium shapes, has been developed. The method features simultaneous formation of recesses in a top portion of a conductive gate... | 02/06/2007 |
| 7160766 | Field-effect semiconductor device and method for making the same A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN,... | 01/09/2007 |
| 7148125 | Method for manufacturing semiconductor power device A semiconductor device, which has a relatively low ON resistance, is manufactured using the following steps. First, a semiconductor wafer that includes a semiconductor layer and a semiconductor element layer, which is located on the semiconductor layer, is formed. T... | 12/12/2006 |
| 7141498 | Method of forming an ohmic contact in wide band semiconductor A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction betwee... | 11/28/2006 |
| 7138321 | Boost capacitor layout technique for an H-bridge integrated circuit motor controller to ensure matching characteristics with that of the low-side switching devices of the bridge An H-bridge circuit having a boost capacitor coupled to the gate of the low-side driver. A driver, in the form of a switching transistor is connected between the load and ground, thus providing a low-side driver. A capacitor is coupled to the gate of the low-side dr... | 11/21/2006 |
| 7132701 | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same con... | 11/07/2006 |
| 7125786 | Method of forming vias in silicon carbide and resulting devices and circuits A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon... | 10/24/2006 |
| 7115921 | Nano-scaled gate structure with self-interconnect capabilities Gate conductors on an integrated circuit are formed with enlarged upper portions which are utilized to electrically connect the gate conductors with other devices. A semiconductor device comprises a gate conductor with an enlarged upper portion which electrically co... | 10/03/2006 |
| 7067850 | Stacked switchable element and diode combination A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series ... | 06/27/2006 |
| 7067361 | Methods of fabricating silicon carbide metal-semiconductor field effect transistors SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which substantially free of deep-level dopants. Utilization of the semi-insulating substrate may reduce back-gating effects in the MESFETs. Also provided are SiC MESFETs with a two recess gate s... | 06/27/2006 |
| 7052945 | Short-channel Schottky-barrier MOSFET device and manufacturing method A MOSFET device and method of fabricating are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and sh... | 05/30/2006 |
| 7002187 | Integrated schottky diode using buried power buss structure and method for making same An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a ... | 02/21/2006 |
