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3M employee and church chorister Art Fry needed something to temporarily mark pages in his hymnal. He was in luck because his colleague, Spencer Silver, accidentally developed a glue that was too weak for other purposes. After initially discouraging consumer response, Post-it Notes became a hit in 1979.
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| Number | Title | Issue Date |
| 7449401 | Semiconductor device with asymmetric transistor and method for fabricating the same A semiconductor device with an asymmetric transistor and a method for fabricating the same are provided. The semiconductor device includes: a substrate having a plurality of first active regions, at least one second active region, and a plurality of device isolation... | 11/11/2008 |
| 7071043 | Methods of forming a field effect transistor having source/drain material over insulative material In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within t... | 07/04/2006 |
| 7041519 | Method for producing p-type group III nitride compound semiconductor A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is... | 05/09/2006 |
| 7018728 | Boron phosphide-based semiconductor device and production method thereof A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (... | 03/28/2006 |
| 6943097 | Atomic layer deposition of metallic contacts, gates and diffusion barriers The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic sil... | 09/13/2005 |
| 6902872 | Method of forming a through-substrate interconnect A method of manufacturing a microelectronics device is provided, wherein the microelectronics device is formed on a substrate having a frontside and a backside. The method comprises forming a circuit element on the frontside of the substrate from a plurality of laye... | 06/07/2005 |
| 6830995 | Method of diffusing zinc into article and method of heating article Provided is a method of heating a semiconductor substrate having a surface of a III-V compound semiconductor containing phosphorus as a group V constituent element. The method comprises the steps of: (a) providing an alloy in a heating furnace, the alloy including t... | 12/14/2004 |
| 6821871 | Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus It is an object of the present invention to make it easy to diffuse phosphorus into a silicon film and allow the phosphorus diffusion concentration to be easily controlled by varying the timing at which the dopant gas is allowed to flow. A silicon wafer 10 on... | 11/23/2004 |
| 6498079 | Method for selective source diffusion Deep profile and highly doped impurity regions can be formed by diffusing from a solid source or doped silicon glass and using a patterned nitride layer. An oxide etch stop and polysilicon sacrificial layer are left in place in the patterned regions and t... | 12/24/2002 |
| 6495433 | Method of activating compound semiconductor layer to p-type compound semiconductor layer A method of activating a compound semiconductor layer into a p-type compound semiconductor layer is provided. In order to reduce the electrical conductivity of the compound semiconductor layer grown by a VPE method, electromagnetic waves having energy lar... | 12/17/2002 |
| 6472300 | Method for growing p-n homojunction-based structures utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 10/29/2002 |
| 6429103 | MOCVD-grown emode HIGFET buffer A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a ga... | 08/06/2002 |
| 6291328 | Opto-electronic device with self-aligned ohmic contact layer An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact lay... | 09/18/2001 |
| 6265290 | Method for fabricating a thin film transistor and a substrate and thin film transistor manufactured using the same A method for fabricating a thin film transistor includes the steps of calculating a scan pitch of a laser beam such that an unevenly crystallized area and an evenly crystallized area of a crystallized polycrystalline silicon layer are alternately arranged... | 07/24/2001 |
| 6242328 | Method of activating compound semiconductor layer to p-type compound semiconductor layer A method of activating a compound semiconductor layer into a p-type compound semiconductor layer is provided. In order to reduce the electrical conductivity of the compound semiconductor layer grown by a VPE method, electromagnetic waves having energy lar... | 06/05/2001 |
| 6214708 | Method and apparatus for diffusing zinc into groups III-V compound semiconductor crystals An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing... | 04/10/2001 |
| 6136627 | High-resolution light-sensing and light-emitting diode array and fabrication method thereof A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/24/2000 |
| 6133125 | Selective area diffusion control process A method for altering a dopant front profile of a dopant in a wafer is disclosed. An initial wafer is provided with an upper doped layer and a lower undoped layer. An oxide layer is grown over a portion of the wafer while a second portion of the wafer rem... | 10/17/2000 |
| 6096587 | Manufacturing method of a junction field effect transistor A manufacturing method of a junction field effect transistor, promising a low ON resistance, high maximum drain current and linearity with a high transmission gain and also enabling the gate length to be reduced, makes a channel layer by sequentially epit... | 08/01/2000 |
| 5937318 | Monocrystalline three-dimensional integrated circuit A monocrystalline monolith contains a 3-D array of interconnected lattice-matched devices (which may be of one kind exclusively, or that kind in combination with one or more other kinds) performing digital, analog, image-processing, or neural-network func... | 08/10/1999 |
| 5856208 | Epitaxial wafer and its fabrication method The present invention relates to an epitaxial wafer including a PN junction, which is improved in terms of light output and can have a good-enough ohmic electrode formed thereon. Epitaxial layers are formed of GaAs1-x Px where 0.45 | 01/05/1999 |
| 5506186 | Method of manufacturing an optoelectronic device The invention relates to a method of manufacturing an optoelectronic device. An indium phosphide part of a semiconductor body is contacted either directly or indirectly through a ternary or quaternary layer by means of a zinc diffusion. In order to improv... | 04/09/1996 |
| 5354694 | Method of making highly doped surface layer for negative electron affinity devices A negative electron affinity device has acceptor dopant concentration increased proximate the emitter face of the III-V semiconductor layer and within the depletion zone effected by an overlying CsO negative electron affinity coating. Methods to accomplis... | 10/11/1994 |
| 5169799 | Method for forming a doped ZnSe single crystal A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycryst... | 12/08/1992 |
| 5124278 | Amino replacements for arsine, antimony and phosphine The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR... | 06/23/1992 |
| 5049524 | Cd diffusion in InP substrates A process for diffusing Cd into an InP substrate comprising: a. pre-heating a sealed tube containing red P and Cd3 P2 at the opening of a diffusion furnace; b. effecting the diffusion within the diffusion furnace; and c. furnace cooling the se... | 09/17/1991 |
| 4889830 | Zinc diffusion in the presence of cadmium into indium phosphide Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.... | 12/26/1989 |
| 4755485 | Method of making light-emitting diodes A structure and method for use in optical communication systems is provided in which a metal is diffused in a heterojunction region beneath a metal contact of a AlGaAs light emitting diode. This structure and method significantly reduces the contacting sh... | 07/05/1988 |
| 4742022 | Method of diffusing zinc into III-V compound semiconductor material Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube f... | 05/03/1988 |
| 4725565 | Method of diffusing conductivity type imparting material into III-V compound semiconductor material Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assembla... | 02/16/1988 |
| 4698122 | Method of diffusion of impurities A method for selectively diffusing impurities such as zinc into the substrate of a compound semiconductor such as gallium arsenide (GaAs). The method makes use of a diffusion mask in such a manner that the thickness of the oxygen-containing layer at the i... | 10/06/1987 |
| 4634474 | Coating of III-V and II-VI compound semiconductors Proposed is a method of fabricating III-V and II-VI compound semiconductors and a resulting product where there is formed on the surface a coating which can function as a diffusion mask and/or a passivation layer. The coating is a silicon layer deposited ... | 01/06/1987 |
| 4592793 | Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: (a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which... | 06/03/1986 |
| 4588455 | Planar diffusion source Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An... | 05/13/1986 |
| 4455351 | Preparation of photodiodes A process is described for fabricating various optical devices including photodiodes in which a protective dielectric layer is put down on the surface of the device prior to heating to temperatures over about 250-300 degrees C. Such devices have excellent... | 06/19/1984 |
| 4350990 | Electrode for lead-salt diodes A significantly more stable ohmic contact for a lead-salt semiconductor surface, especially for use in infrared lasers. The contact has layers of platinum, palladium or nickel alternating with gold, and then covered with indium. An Au-Pd-Au-In contact is ... | 09/21/1982 |
| 4280858 | Method of manufacturing a semiconductor device by retarding the diffusion of zinc or cadmium into a device region A semiconductor device and a method for manufacturing the semiconductor device are disclosed for forming an abrupt and accurately positioned p-n junction between a substrate and a substrate-adjoining region. This is achieved in accordance with the present... | 07/28/1981 |
| 4264381 | Fabrication of injection lasers utilizing a porous host diffusion layer Porous silica doped with zinc is used as a p-type dopant source in the construction of rib lasers. Other modifications include allowing the zinc diffusion to go right through the active layer and to dimension the device so that lateral optical guidance is... | 04/28/1981 |
| 4233090 | Method of making a laser diode In making a laser diode by a method which includes epitaxially depositing a plurality of layers of a semiconductor material on a substrate, the final outermost layer deposited is of a material which has a band-gap lower than the preceding adjacent layer, ... | 11/11/1980 |
| 4116725 | Heat treatment of cadmium mercury telluride and product A method of improving certain characteristics of cadmium mercury telluride single crystal material by heat treating the single crystal material in the presence of both tellurium and mercury.... | 09/26/1978 |
