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| Number | Title | Issue Date |
| 5777328 | Ramped foot support A support arm for a bolometer suspended over a substrate contacts the underlying substrate in the form of a triangular wedge. The support arm may be a dielectric coated silicon with a metal conductor on the support arm and extending to a contact pad on th... | 07/07/1998 |
| 5770478 | Integral mesh flat plate cooling method An electronic module is provided comprising integrated circuit chips mounted on a substrate and having a specially designed cooling plate overlying the chip producing a gap above about 1 mil and a thermal paste or thermal adhesive between the cooling plat... | 06/23/1998 |
| 5688699 | Microbolometer A method is provided for forming a bolometer having an infrared sensitive material disposed on a platform elevated over a surface of a semiconductor body. The method includes forming a thermally insulating support layer to provide the platform and legs fo... | 11/18/1997 |
| 5602043 | Monolithic thermal detector with pyroelectric film and method One or more thin film layers of material may be formed on an integrated circuit substrate and anisotropically etched to produce a monolithic thermal detector. A first layer of material may be placed on the integrated circuit substrate and anisotropically ... | 02/11/1997 |
| 5577309 | Method for forming electrical contact to the optical coating of an infrared detector This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the ... | 11/26/1996 |
| 5520299 | Etching pyroelectric devices post ion milling This is a system and method of etching pyroelectric devices post ion milling. The method may comprise: forming a mask 32 for thermal isolation trenches on a substrate 14; ion milling thermal isolation trenches 40 in the substrate 14; and etching undesired... | 05/28/1996 |
| 5446437 | Temperature sensor An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is di... | 08/29/1995 |
| 5403752 | Method for manufacturing a pyrodetector apparatus A method for manufacturing a pyrodetector apparatus having hole structures produced by electrochemical etching in a first principal face of a substrate of n-doped, monocrystalline silicon, so that a structured region arises in the substrate. At least one ... | 04/04/1995 |
| 5288649 | Method for forming uncooled infrared detector A bolometer for detecting radiation in a spectral range is described herein. The bolometer includes an integrated circuit substrate 122 and a pixel body 120 spaced from the substrate 122 by at least one pillar 124. The pixel body 120 comprises an absorber... | 02/22/1994 |
| 5260225 | Integrated infrared sensitive bolometers A method for fabricating an integrated infrared sensitive bolometer having a polycrystalline element whereby an oxide region deposited on silicon nitride covered with a first polysilicon layer which is etched to provide a location for a bolometer element.... | 11/09/1993 |
| 5252498 | Method of forming electronic devices utilizing diamond A diamond thermistor is described. Surface portions of temperature sensing diamond of the thermistor are doped with impurity ions by ion implantation except for a sensing area thereof. A pair of electrodes are formed on the impurity regions in order to ma... | 10/12/1993 |
| 5193911 | Thermal detector device A thermal imaging device comprising a pyroelectric layer having on one major surface an array of interconnected electrodes forming an entrance face, and on the opposite major surface an array of discrete electrodes connected to electrical circuitry formed... | 03/16/1993 |
| 5183530 | Method of manufacturing diamond thermistors A method of manufacturing diamond thermistors is described. A pair of diamond contact regions having a low resistance are formed on a temperature sensing diamond substrate. The formation of the diamond contact regions is carried out by depositing a diamon... | 02/02/1993 |
| 5100479 | Thermopile infrared detector with semiconductor supporting rim A thermopile detector is disclosed consisting of a semiconductor supporting rim which is doped across all of the rim. The rim supports a series of polycrystalline silicon and metal thermocouples. The fully doped semiconductor area serves as an etch stop f... | 03/31/1992 |
| 5100829 | Process for forming a semiconductor structure with closely coupled substrate temperature sense element MOSFET devices or circuits incorporating an improved substrate temperature sensing element are obtained by forming a PN junction directly on a thin (gate) dielectric region. The temperature sense junction is desirably formed in a poly layer. By mounting i... | 03/31/1992 |
| 5059543 | Method of manufacturing thermopile infrared detector A thermopile detector is disclosed consisting of a semiconductor supporting rim which is doped across all of the rim. The rim supports a series of polycrystalline silicon and metal thermocouples. The fully doped semiconductor area serves as an etch stop f... | 10/22/1991 |
| 4983225 | Process of manufacturing miniature thermoelectric converters A thermoelectric semiconductor multicouple array comprises a substrate of semi-insulating material 10, alternate n-type and p-type strips or legs ion implanted into said substrate and connected together electrically in series, and terminal means 11 connec... | 01/08/1991 |
| 4971921 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device employed for high power use and a method of manufacturing the same. According to the present invention, a temperature detecting device is formed on the same substrate with a power device. Thus, there... | 11/20/1990 |
| 4918505 | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith An integrated circuit is formed in a semiconductor die having a front face and a back face, the die having at least first and second functional regions. The first functional region comprises at least one zone of p-type material and at least one zone of n-... | 04/17/1990 |
| 4895616 | Method for making thin film orthogonal microsensor for air flow A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates... | 01/23/1990 |
| 4867842 | Method of making slotted diaphragm semiconductor devices An integrated semiconductor device includes a semiconductor body with a first surface having a predetermined orientation with respect to a crystalline structure in the semiconductor body. The semiconductor body has a depression formed into the first surfa... | 09/19/1989 |
| 4857270 | Process for manufacturing silicon-germanium alloys A process for manufacturing a silicon-germanium alloy comprising introducing SiH4 gas, GeCl4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750° C., and depositing ... | 08/15/1989 |
| 4849033 | Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency The thermoelectric conversion efficiency of a GaP dope SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200° C. to 1275° C. in air to form large grains having... | 07/18/1989 |
| 4817436 | Measuring device forming fluxmeter and temperature sensor combined and process for preparing the same The invention relates to a composite material, which comprises a sheet of insulating matter comprising on one face a meandering strip of Constantan covered with zones of copper, so as to define a fluxmeter formed by successive rows of individual thermocou... | 04/04/1989 |
| 4766008 | Method of manufacturing thin film conductor which contains silicon and germanium as major components The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CV... | 08/23/1988 |
| 4654224 | Method of manufacturing a thermoelectric element Disclosed are a thermoelectric device and method of making the device. The device has a plurality of thermoelectric elements electrically in series and thermally in parallel, where the individual thermoelectric elements have a thermoelectric body formed o... | 03/31/1987 |
| 4589918 | Thermal shock resistant thermoelectric material A thermoelectric material comprising an alloy, a solid solution or an alloy and a solid solution consisting essentially of (a) iron disilicide, (b) 0.3 to 4.6 atomic %, based on the total amount of the whole component elements, of boron and optionally, (c) 0.1... | 05/20/1986 |
| 4581928 | Slotted diaphragm semiconductor device A semiconductor body comprises (100) silicon having a (100) plane and a [110] direction. A depression is formed in a first surface of the semiconductor body which is substantially parallel to the (100) plane. A slotted diaphragm is located over the depres... | 04/15/1986 |
| 4571608 | Integrated voltage-isolation power supply Disclosed is an integrated voltage-isolation power supply comprising a thin film heater, a thin film thermocouple, and a thin film of dielectric. A semiconductor body supports a portion of the thin film of dielectric out of contact with the body. The thin... | 02/18/1986 |
| 4561303 | Mass airflow sensor with backflow detection A mass airflow sensor with backflow detection includes a first, second, and third elongated, relatively thin silicon members generally parallel to each other and spaced from each other in an orienting plane. The second silicon member, between the first an... | 12/31/1985 |
| 4500742 | Iron silicide thermoelectric conversion element An iron silicide thermoelectric conversion element wherein a part of one of components of the silicide is substituted by oxygen atom to form either Si-O bond or Fe-O bond in a matrix of the compound to provide either p-type conductivity or n-type conducti... | 02/19/1985 |
| 4472239 | Method of making semiconductor device A semiconductor device comprising a semiconductor body having a depression formed into the first surface of the body. The device further comprises member means comprising a thermal-to-electric or static electric element, the member means having a predeter... | 09/18/1984 |
| 4401690 | Thermochromic vanadium oxide with depressed switching temperature A method is disclosed for producing a thermochromic window comprising a glass substrate and a coating containing VO2 with a depressed switching temperature by doping the VO2 film with a compound of a metal having an ionic radius larg... | 08/30/1983 |
| 4111717 | Small-size high-performance radiation thermopile A thermopile type radiation detector for use in radiation pyrometry having small size and high performance in which the thermopiles are formed by evaporating the thermocouple leads onto a thin substrate together with a pattern distribution of thermocouple... | 09/05/1978 |
| 4098617 | Method of manufacturing film thermopile A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi2 Te3 and Sb2 Te3 is deposited on a substrate.... | 07/04/1978 |
| 4047436 | Measuring detector and a method of fabrication of said detector The measuring detector is constituted by the resistance of a given volume of doped semiconductor, there being formed on one face of a semiconducting monocrystal a surface region having a well-determined thickness and a well-determined concentration of dop... | 09/13/1977 |
| 4032371 | Method of making a thermo-element The invention relates to a method of making a thermo-element having two sections with two electric conductor materials of different thermo-electric properties connected in series. The method involves forming a porous base body with interconnected pores an... | 06/28/1977 |
| 3981071 | Process of thermistor manufacture A process for the fabrication of thermistors is described. Conductive wires are positioned in a spaced fashion and are aligned so as to intersect one another. The wires are maintained in the above alignment and placed into a reaction chamber or other suit... | 09/21/1976 |
