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| Number | Title | Issue Date |
| 5595939 | Liquid-sealed semiconductor pressure sensor and manufacturing method thereof A liquid-sealed type semiconductor pressure sensor with no filling orifice includes a connector housing which is made of high polymer compound material of high air permeability and which has a recess and connector pins, where a main housing which has a se... | 01/21/1997 |
| 5591679 | Sealed cavity arrangement method This invention relates to a method for making sealed cavities on silicon wafer surfaces by anodic bonding and with electrically insulated conductors through the sealing areas to connect functional devices inside the cavities to electrical terminals outsid... | 01/07/1997 |
| 5585311 | Capacitive absolute pressure sensor and method A capacitive absolute pressure sensor. The sensor includes a substrate having an electrode deposited thereon and a diaphragm assembly disposed on the substrate. As pressure increases, the diaphragm deflects, touches the electrode (in the touch mode), and ... | 12/17/1996 |
| 5545594 | Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented A method for bonding a silicon substrate and a glass substrate through an anodic-bonding process, including steps of: forming at least two holes in the glass substrate; forming a recess on the glass substrate, the recess confronting an undesired bonding p... | 08/13/1996 |
| 5545849 | Electronic component device and its manufacturing method The invention is an electronic component device in the form of an envelope including a glass cover and a glass shell bonded together for hermetically sealing a surface acoustic filter inside the envelope. Electrical connections are provided from the filte... | 08/13/1996 |
| 5543349 | Method for fabricating a beam pressure sensor employing dielectrically isolated resonant beams A pressure transducer comprising at least one diaphragm formed in a wafer of semiconducting material, the at least one diaphragm being spaced from a first surface of the wafer, a first layer of semiconducting material disposed over the at least one diaphr... | 08/06/1996 |
| 5532187 | Process for sealing apertures in glass-silicon-glass micromechanical acceleration sensors A method for sealing apertures caused by manufacturing processes in micromechanical acceleration sensors is disclosed whereby apertures or recesses, serving for leading the conductor paths out of the oscillation space of an acceleration sensor without cau... | 07/02/1996 |
| 5528214 | Pressure-adjusting device for adjusting output of integrated pressure sensor A pressure-adjusting device for adjusting an output of an integrated pressure sensor in which a silicon wafer is joined onto a seat that has pressure-adjusting passages formed therein, and which has formed in the silicon wafer a signal processing circuit ... | 06/18/1996 |
| 5504032 | Micromechanical accelerometer and method of manufacture thereof A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin semiconductor material oxide layers. The accelerometer is formed by first connecting a coverplate and a basepl... | 04/02/1996 |
| 5503285 | Method for forming an electrostatically force balanced silicon accelerometer An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate by ion implantation and the formation of an oxide support layer below the proofmass, subsequently integrally bonding two complementary proofmass... | 04/02/1996 |
| 5502631 | Circuit elements that are ultrasonically welded together A new and improved electronic circuit and a method of producing the same is provided in which at least one electronic element is ultrasonically welded to a printed circuit board to create the electronic circuit. Proper alignment between terminals of a con... | 03/26/1996 |
| 5461001 | Method for making semiconductor structures having environmentally isolated elements A first semiconductor wafer having a semiconductor element such as a piezoresistive element or any integrated circuit located on a top surface thereof is bonded to a second semiconductor wafer so that the semiconductor element on the first wafer is receiv... | 10/24/1995 |
| 5455203 | Method of adjusting the pressure detection value of semiconductor pressure switches A method of adjusting a semiconductor pressure switch of the type having a silicon substrate having a pressure receiving diaphragm includes mounting and pressurizing the semiconductor pressure switch in a pressure chamber and measuring the pressure of the... | 10/03/1995 |
| 5424249 | Method of making mold-packaged pressure sensing semiconductor device A pressure sensor element (50) is bonded to a die bonding pad (4). The pressure sensor element (50) is thereafter entirely covered with epoxy resin (11) and completely packaged. Following this, the epoxy resin (11) is locally removed at a portion above a ... | 06/13/1995 |
| 5393706 | Integrated partial sawing process A process for partially sawing the streets on semiconductor wafers. After sawing the streets can be covered by a protective material, and then the wafer continues its processing as before. After the wafer is broken, the protective material may or may not ... | 02/28/1995 |
| 5389198 | Structure and method of manufacturing the same A method of manufacturing structures such as a pressure gauge, an accelerometer and the like with a single crystal material such as silicon uses etching techniques where the shape of a part subjected to stress concentration has a curvature, another part i... | 02/14/1995 |
| 5369057 | Method of making and sealing a semiconductor device having an air path therethrough This invention generally relates to the provision of a vent path during the bonding of silicon wafers and the subsequent encapsulation of the individual devices. A double-sided polished silicon wafer is used for the device wafer. The device wafer includes... | 11/29/1994 |
| 5357673 | Semiconductor device encapsulation method In a semiconductor device encapsulation assembly (50; 60), a semiconductor device (21), preferably a pressure transducer, is mounted on a base (11) in a cavity (20) formed by the base and surrounding walls (15). Electrical connections, preferably wire bon... | 10/25/1994 |
| 5320705 | Method of manufacturing a semiconductor pressure sensor A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semico... | 06/14/1994 |
| 5273939 | Method of assembling micromechanical sensors A method is proposed for assembling micromechanical sensors, in particular Hall sensors, or pressure or acceleration sensors, in which at least one silicon sensor element is applied to a substrate. The at least one silicon sensor element is joined to the ... | 12/28/1993 |
| 5266827 | Semiconductor pressure sensor assembly having an improved package structure A semiconductor pressure sensor assembly, comprising a receptacle having a floor and including a first cavity recessed within a first portion of the floor, and a second cavity recessed within a second portion of the floor and connected to the first cavity... | 11/30/1993 |
| 5225373 | Method of manufacturing semiconductor pressure sensor device with two semiconductor pressure sensor chips A semiconductor pressure sensor device that improve the measuring accuracy without providing a silicon base in attaching a semiconductor pressure sensor chip to a lead frame, and a method of manufacturing thereof is disclosed. The semiconductor pressure s... | 07/06/1993 |
| 5223086 | Method of producing an acceleration sensor of a semiconductor This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a si... | 06/29/1993 |
| 5212115 | Method for microelectronic device packaging employing capacitively coupled connections A method for microelectronic device encapsulation is described comprising steps of providing a microelectronic device (e.g., a surface acoustic wave device) having interconnection contacts disposed thereon and depositing a passivation layer over the micro... | 05/18/1993 |
| 5200363 | Method for manufacturing a semiconductor package including a glass support An electronic component with at least one silicon chip is proposed, where the silicon chip is provided with electronic switching elements on at least one main surface. The silicon chip is bonded to a glass support with its main surface provided with the e... | 04/06/1993 |
| 5164328 | Method of bump bonding and sealing an accelerometer chip onto an integrated circuit chip A method of joining an integrated circuit die (10) and a sensor die (11) by the use of solder bumps (12) for the formation of a hybrid circuit assembly. Sensor die (11) and integrated circuit die (10) are manufactured separately from each other. These two... | 11/17/1992 |
| 5155061 | Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures A method for fabricating an all silicon absolute pressure sensor employing silicon-on-insulator structures. More particularly, a method for fabricating an all silicon absolute pressure sensor based upon an ungated metal-oxide semiconductor field-effect tr... | 10/13/1992 |
| 5095752 | Capacitance type accelerometer A capacitance type accelerometer, having a fist silicon plate formed a movable electrode which is moved according to acceleration, two second silicon plates which are disposed on both sides of the first silicon plate with a certain separation distance, an... | 03/17/1992 |
| 5057458 | Combination of a support and a semiconductor body and method of manufacturing such a combination The invention relates to the combination of a support and a semiconductor body and to a method of manufacturing same, in which a deformable metal layer is disposed between the semiconductor body and the support. The semiconductor body is connected to the suppo... | 10/15/1991 |
| 5013396 | Method of making an ultraminiature pressure sensor A capacitive pressure sensor suitable for making highly sensitive, low pressure measurements is disclosed. The sensor may be mounted into a 0.5 mm OD catheter suitable for multipoint pressure measurements from within the coronary artery of the heart. The ... | 05/07/1991 |
| 5002901 | Method of making integral transducer structures employing high conductivity surface features A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to d... | 03/26/1991 |
| 5000817 | Batch method of making miniature structures assembled in wafer form A batch method for fabricating semiconductor capacitive force transducers is disclosed wherein a first wafer of silicon or fused silica is recessed by etching to define an array of force transducer structures, each including a deflectable portion supporte... | 03/19/1991 |
| 4996082 | Sealed cavity semiconductor pressure transducers and method of producing the same Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide pos... | 02/26/1991 |
| 4861420 | Method of making a semiconductor transducer A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second... | 08/29/1989 |
| 4843035 | Method for connecting elements of a circuit device A method for connecting circuit elements in which plural circuit elements are placed on a plane with their front surfaces being in contact with the plane, an insulative adhesive is introduced into the space between the circuit elements unites them togethe... | 06/27/1989 |
| 4802952 | Method for manufacturing semiconductor absolute pressure sensor units A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chi... | 02/07/1989 |
| 4701424 | Hermetic sealing of silicon A method of forming a hermetic seal between two silicon wafers includes forming opposing troughs in each of the two wafers. In each trough are formed an isolation layer, a diffusion barrier and a tub of polysilicon. A gold strip is put on one polysilicon ... | 10/20/1987 |
| 4672354 | Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus There is disclosed apparatus and methods of fabricating a piezoresistive semiconductor structure for use in a transducer. According to one method, a layer of silicon dioxide is grown over the surface of a first semiconductor wafer which is designated as a... | 06/09/1987 |
| 4523964 | High temperature layered silicon structures The invention relates to a process for producing silicon diaphragm pressure transducers, and to pressure transducers so produced, which will operate in high temperature applications above 150° C. by properly insulating the strain gauges from the diaphrag... | 06/18/1985 |
| 4426768 | Ultra-thin microelectronic pressure sensors A plurality of thin pressure sensors are made by processing a first large wafer (20, 110) to provide a plurality of electronic devices (28, 122, 124, 125) having a characteristic which varies inversely with strain, and processing a second wafer (40) to pr... | 01/24/1984 |
