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| Number | Title | Issue Date |
| 7977218 | Thin oxide dummy tiling as charge protection Novel fabrication methods implement the use of dummy tiles to avoid the effects of in-line charging, ESD events, and such charge effects in the formation of a memory device region region. One method involves forming at least a portion of a memory core array upon a s... | 07/12/2011 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7341787 | Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to... | 03/11/2008 |
| 7323373 | Method of forming a semiconductor device with decreased undercutting of semiconductor material A semiconductor device is formed by patterning a semiconductor layer to create a vertical active region and a horizontal active region, wherein the horizontal active region is adjacent the vertical active region. The semiconductor layer overlies an insulating layer.... | 01/29/2008 |
| 7315335 | Liquid crystal display device with variations of positions of peaks of depth distributions of concentration of impurities in polycrystalline being within 10% of thickness A liquid crystal display device is provided with a pixel area on a substrate having plural gate lines, plural drain lines, plural thin film transistors and plural pixel electrodes corresponding to the plural thin film transistors, and a drive circuit area disposed a... | 01/01/2008 |
| 7294535 | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A heat treatment is carried out for an amorphous semiconductor thin film, to thereby obtain a crystalline semiconductor thin fil... | 11/13/2007 |
| 7232742 | Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film In a method of crystallizing a semiconductor film by introducing a metallic element that promotes crystallization, a gettering thereafter is effectively performed. A material film having a high tensile stress, typically a silicon nitride film, is formed in contact w... | 06/19/2007 |
| 7223649 | Method of fabricating transistor of DRAM semiconductor device Embodiments prevent or substantially reduce diffusion of a P-type impurity into a channel region in a PMOS transistor having a dual gate. Some embodiments include forming a device isolation film on a semiconductor substrate, forming a channel impurity region in an a... | 05/29/2007 |
| 7132317 | Method of manufacturing a semiconductor device that includes changing the internal stress of a conductive film There has been a case where peeling occurs if an internal stress of a wiring of a TFT is strong. In particular, the internal stress of a gate electrode largely influences a stress that a semiconductor film receives, and there has been a case where the internal stres... | 11/07/2006 |
| 7115488 | Method of manufacturing semiconductor device Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is req... | 10/03/2006 |
| 7102151 | Small electrode for a chalcogenide switching device and method for fabricating same A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode ... | 09/05/2006 |
| 7015122 | Method of forming polysilicon thin film transistor A method of forming a polysilicon thin film transistor is disclosed in the present invention. The method includes forming a buffer layer on a transparent substrate, forming an amorphous silicon layer on the buffer layer, crystallizing the amorphous silicon layer int... | 03/21/2006 |
| 6949452 | Method for fabricating image display device There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion ... | 09/27/2005 |
| 6939749 | Method of manufacturing a semiconductor device that includes heating the gate insulating film A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element w... | 09/06/2005 |
| 6890827 | Method of fabricating a silicon on insulator transistor structure for imbedded DRAM To address the above-discussed deficiencies of the prior art, the present invention provides an integrated circuit formed on a semiconductor wafer, comprising a doped base substrate; an insulator layer formed over the doped base substrate; and a doped ultra thin act... | 05/10/2005 |
| 6881986 | Design and fabrication method for finger n-type doped photodiodes with high sensitivity for CIS products A novel structure for a photodiode is disclosed. It is comprised of a p-type region, which can be a p-substrate or p-well, extending to the surface of a semiconductor substrate. A multiplicity of parallel finger-like n-wells is formed in the p-type region. The finge... | 04/19/2005 |
| 6881653 | Method of manufacturing CMOS semiconductor device A method of manufacturing a CMOS semiconductor device able to reduce the effective thickness of the gate insulating film and able to secure stable performance is provided. The method in one embodiment comprises the steps of: forming a polycrystalline silicon film on... | 04/19/2005 |
| 6878577 | Method of forming LDD of semiconductor devices A method of forming an LDD of a semiconductor device. A substrate having a polysilicon layer thereon is provided, wherein the polysilicon layer comprises a first region and a second region. A patterned photoresist layer is formed on the polysilicon layer for exposin... | 04/12/2005 |
| 6867113 | In-situ deposition and doping process for polycrystalline silicon layers and the resulting device An in-situ deposition and doping method for polycrystalline silicon layers of semiconductor devices. A first intermediate layer of in-situ doped polycrystalline silicon is grown, and a second additional layer of polycrystalline silicon is grown with a lower doping l... | 03/15/2005 |
| 6855991 | Semiconductor device having a doped lattice matching layer and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. The semiconductor device may include a doped buried layer located over a doped substrate and a doped epitaxial layer located over t... | 02/15/2005 |
| 6852611 | ROM embedded DRAM with dielectric removal/short A ROM embedded DRAM allows hard programming of ROM cells by shorting DRAM capacitor plates during fabrication. In one embodiment, the intermediate dielectric layer is removed and the plates are shorted with a conductor. In another embodiment, an upper conductor and ... | 02/08/2005 |
| 6750122 | Semiconductor device formed with an oxygen implant step A method of forming a semiconductor structure (see e.g., FIG. 3) includes forming a silicon (e.g., polysilicon) layer 14. The silicon layer 14 is patterned and etched so that at least one sidewall 20 is exposed. An oxygen bearing species ... | 06/15/2004 |
| 6743701 | Method for the formation of active area utilizing reverse trench isolation A method for forming an active area in a substrate includes the steps of growing an isolation oxide on a silicon substrate, providing a photresist mask to define the active areas on the substrate, performing etching and stripping processes, removing the residual oxi... | 06/01/2004 |
| 6737339 | Semiconductor device having a doped lattice matching layer and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. The semiconductor device may include a doped buried layer located over a doped substrate and a doped epitaxial layer located over t... | 05/18/2004 |
| 6730584 | Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures The invention encompasses stacked semiconductor devices including gate stacks, wordlines, PROMs, conductive interconnecting lines, and methods for forming such structures. The invention also includes a method of forming a transistor gate comprising: a) forming gate ... | 05/04/2004 |
| 6727122 | Method of fabricating polysilicon thin film transistor A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface o... | 04/27/2004 |
| 6713371 | Large grain size polysilicon films formed by nuclei-induced solid phase crystallization A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorph... | 03/30/2004 |
| 6703300 | Method for making multilayer electronic devices There is a method for forming a multilayer electronic device. The method has the following steps: a) depositing a thin molecular layer on an electrically conductive substrate and b) depositing metal atoms or ions on the thin molecular layer at an angle of... | 03/09/2004 |
| 6696345 | Metal-gate electrode for CMOS transistor applications Described is a CMOS transistor structure with a multi-layered gate electrode structure and a method of fabrication. The gate electrode structure has a three-layered metallic gate electrode and a polysilicon layer. The first metallic layer acts as a barrie... | 02/24/2004 |
| 6693022 | CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures Doped polysilicon layers and layered polysilicon structures are produced, and the layers and layered structures are structured. The doping is distinguished by the fact that the doping compound is added as a process gas during the chemical vapor deposition... | 02/17/2004 |
| 6660574 | Method of forming a semiconductor device including recombination center neutralizer A method of forming a semiconductor device wherein treatment gate insulating layer is formed such that its edges extend beyond edges of a gate electrode. Specifically, the method includes the steps of forming a non-single crystalline semiconductor layer o... | 12/09/2003 |
| 6645826 | Semiconductor device and method of fabricating the same In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semicon... | 11/11/2003 |
| 6635554 | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, a... | 10/21/2003 |
| 6613653 | Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatu... | 09/02/2003 |
| 6602800 | Apparatus for forming thin film on semiconductor substrate by plasma reaction A plasma CVD apparatus for forming a thin film on a semiconductor substrate by plasma reaction includes: (i) a reaction chamber; (ii) a reaction gas inlet for introducing a reaction gas into the reaction chamber; (iii) a lower stage on which a semiconduct... | 08/05/2003 |
| 6576831 | Multicrystalline silicon having a low proportion of active grain borders Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.... | 06/10/2003 |
| 6534350 | Method for fabricating a low temperature polysilicon thin film transistor incorporating channel passivation step A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insu... | 03/18/2003 |
| 6506655 | Bipolar transistor manufacturing method A method of manufacturing a bipolar transistor in an N-type semiconductor substrate, including the steps of depositing a first base contact polysilicon layer and doping it; depositing a second silicon oxide layer; forming in the first and second layers an... | 01/14/2003 |
| 6486046 | Method of forming polycrystalline semiconductor film It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film wi... | 11/26/2002 |
| 6429101 | Method of forming thermally stable polycrystal to single crystal electrical contact structure A method for forming a thermally stable ohmic contact structure that includes a region of monocrystalline semiconductor and a region of polycrystalline semiconductor. At least one region of dielectric material is formed between at least a portion of the r... | 08/06/2002 |
