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| Number | Title | Issue Date |
| 7754587 | Silicon deposition over dual surface orientation substrates to promote uniform polishing A semiconductor process and apparatus provide a planarized hybrid substrate (16) by selectively depositing an epitaxial silicon layer (70) to fill a trench (96), and then blanket depositing silicon to cover the entire wafer with near uniform thi... | 07/13/2010 |
| 7662704 | Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding the display region and includes semiconductor elements that drive the... | 02/16/2010 |
| 7642177 | Method of manufacturing nanowire A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of manufacturing a semiconductor apparatus may include forming a material layer... | 01/05/2010 |
| 7608530 | Hetero-crystalline structure and method of making same A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. Th... | 10/27/2009 |
| 7413967 | Yield improvement in silicon-germanium epitaxial growth A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are fo... | 08/19/2008 |
| 7413939 | Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit A method of fabricating a silicon-germanium CMOS includes preparing a silicon substrate wafer; depositing an insulating layer on the silicon substrate wafer; patterning and etching the insulating layer; depositing a layer of polycrystalline germanium on the insulati... | 08/19/2008 |
| 7407873 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line... | 08/05/2008 |
| 7396744 | Method of forming a semiconductor thin film A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openin... | 07/08/2008 |
| 7390705 | Method for crystallizing amorphous semiconductor thin film by epitaxial growth using non-metal seed and method for fabricating poly-crystalline thin film transistor using the same A method for crystallizing an amorphous semiconductor thin film using a non-metal seed epitaxial growth (NSEG) is provided. The method includes the steps of: forming a pair of non-metal seeds for inducing a crystallization of an amorphous semiconductor thin film at ... | 06/24/2008 |
| 7365358 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grai... | 04/29/2008 |
| 7364990 | Epitaxial crystal growth process in the manufacturing of a semiconductor device First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown,... | 04/29/2008 |
| 7364976 | Selective etch for patterning a semiconductor film deposited non-selectively A method to selectively etch, and hence pattern, a semiconductor film deposited non-selectively is described. In one embodiment, a carbon-doped silicon film is deposited non-selectively such that the film forms an epitaxial region where deposited on a crystalline su... | 04/29/2008 |
| 7332431 | Method of manufacturing semiconductor device In a semiconductor device having a semiconductor film crystallized by using a metal element, it is an object to provide a technique for reducing the crystal defects in a semiconductor film, and a technique for forming a semiconductor film with high crystallinity by ... | 02/19/2008 |
| 7303968 | Semiconductor device and method having multiple subcollectors formed on a common wafer A semiconductor device and a method of fabricating a semiconductor device having multiple subcollectors which are formed in a common wafer, in order to provide multiple structures having different characteristic and frequency response are provided. The subcollectors... | 12/04/2007 |
| 7300854 | Method for producing a semiconductor component having a movable mass in particular, and semiconductor component produced according to this method A method of producing a semiconductor component, e.g., a multilayer semiconductor component, and a semiconductor component produced by this method, where the semiconductor component has, e.g., a mobile mass, i.e., an oscillator structure. A method easily and ... | 11/27/2007 |
| 7259081 | Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions A process and system for processing a thin film sample (e.g., a semiconductor thin film), as well as the thin film structure are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. With this beam pulse, at least one portion o... | 08/21/2007 |
| 7247528 | Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconducto... | 07/24/2007 |
| 7247562 | Semiconductor element, semiconductor device and methods for manufacturing thereof The present invention provides a method of manufacturing a semiconductor element having a miniaturized structure and a semiconductor device in which the semiconductor element having a miniaturized structure is integrated highly, by overcoming reduction of the yield ... | 07/24/2007 |
| 7230301 | Single-crystal silicon semiconductor structure A resistor, a transistor, and a capacitor can be fabricated on a semiconductor wafer in a process that forms an isolated single-crystal region with precise dimensions. The isolated single-crystal region, in turn, defines the body of the resistor, the gate of the tra... | 06/12/2007 |
| 7226825 | Method of fabricating micro-chips A method of fabricating micro-chips, including: (a) providing a substrate; (b) forming a first single-crystal layer on a top surface of the substrate; (c) forming a second single-crystal layer on a top surface of the first single-crystal layer; (d) forming integrate... | 06/05/2007 |
| 7223802 | High order silane composition, and method of forming silicon film using the composition It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safet... | 05/29/2007 |
| 7186630 | Deposition of amorphous silicon-containing films Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, hig... | 03/06/2007 |
| 7179727 | Formation of lattice-tuning semiconductor substrates A method of forming a lattice-tuning semiconductor substrate comprises the steps of defining parallel strips of a Si surface by the provision of spaced parallel oxide walls (2) on the surface, selectively growing a first SiGe layer on the strips such that fir... | 02/20/2007 |
| 7157344 | Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method In a vapor-phase growth method in which a silicon-germanium mixed crystal layer is deposited on a semiconductor substrate, the vapor-phase growth method comprises a first step of introducing silicon raw material gas into a reaction furnace in such a manner that a si... | 01/02/2007 |
| 7118995 | Yield improvement in silicon-germanium epitaxial growth A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are fo... | 10/10/2006 |
| 7105055 | In situ growth of oxide and silicon layers A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within ... | 09/12/2006 |
| 7087506 | Method of forming freestanding semiconductor layer A method of providing a freestanding semiconductor layer on a conventional SOI or bulk-substrate silicon device includes forming an amorphous or polycrystalline mandrel on a monocrystalline base structure. A conformal polycrystalline semiconductor layer is then form... | 08/08/2006 |
| 7087527 | Extended kalman filter incorporating offline metrology An algorithm uses offline metrology to control a process by passing information from an outer control loop to an inner control loop, extended Kalman filter estimator. The inner control loop operates online, and the outer control loop operates asynchronously with res... | 08/08/2006 |
| 7083679 | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 08/01/2006 |
| 7078296 | Self-aligned trench MOSFETs and methods for making the same Self-aligned trench MOSFETs and methods for manufacturing the same are disclosed. By having a self-aligned structure, the number of MOSFETS per unit area—the cell density—is increased, making the MOSFETs cheaper to produce. The self-aligned structure for the MOS... | 07/18/2006 |
| 7078777 | Semiconductor device having a low-resistance gate electrode A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitri... | 07/18/2006 |
| 7074685 | Method of fabrication SiGe heterojunction bipolar transistor A method of fabricating a semiconductor device includes a SiGe(C) heterojunction bipolar transistor using a non-selective epitaxial growth where an insulating layer is formed on a substrate and a layer structure including a conductive layer is provided on the insula... | 07/11/2006 |
| 7067404 | Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization A thin film semiconductor device includes a gate electrode insulator formed through high-heat oxidization of a semiconductor film. The high-heat oxidization of semiconductor film is carried out, in the process of crystallization or recrystallization of non-single-cr... | 06/27/2006 |
| 7063999 | Thin film processing method and thin film processing apparatus including controlling the cooling rate to control the crystal sizes A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the unit of the irradiation is car... | 06/20/2006 |
| 7060577 | Method for forming metal silicide layer in active area of semiconductor device The present invention provides a method for forming a metal silicide layer in an active area of the semiconductor device. The method for forming the metal silicide layer includes: forming a source/drain junction area on a silicon substrate; forming an attack protect... | 06/13/2006 |
| 7045836 | Semiconductor structure having a strained region and a method of fabricating same A semiconductor structure including a highly strained selective epitaxial top layer suitable for use in fabricating a strained channel transistor. The top layer is deposited on the uppermost of a series of one or more lower layers. The lattice of each layer is misma... | 05/16/2006 |
| 7042564 | Wafer inspection methods and an optical inspection tool A method of inspecting a plurality of wafers in an optical inspection tool. The method includes the steps of generating a reference wafer and polishing the reference wafer in a chemical mechanical polishing process following a metal deposition process such that the ... | 05/09/2006 |
| 6997061 | Non-contact technique to monitor surface stress A non-contact method for evaluating stress in a substrate. An impurity is non-uniformly introduced into at least one region of a crystalline substrate. The crystalline substrate is subjected to physical stress. Fluorescence producing energy is directed at the crysta... | 02/14/2006 |
| 6991999 | Bi-layer silicon film and method of fabrication A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure. ... | 01/31/2006 |
| 6989316 | Semiconductor device and method for manufacturing In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in or... | 01/24/2006 |
