Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 8178428 | Manufacturing method of semiconductor device and substrate processing apparatus A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into... | 05/15/2012 |
| 8133801 | Method for forming a semiconducting layer with improved gap filling properties A method of manufacturing a memory device includes forming a first dielectric layer over a substrate, forming a charge storage element over the first dielectric layer and forming an inter-gate dielectric over the charge storage element. The method also includes depo... | 03/13/2012 |
| 8076222 | Microcrystalline silicon thin film transistor Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a first gas mixture havi... | 12/13/2011 |
| 8017508 | Method for manufacturing semiconductor device A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including ... | 09/13/2011 |
| 7923358 | Methods for preparation of high-purity polysilicon rods using a metallic core means The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means is constituted by forming on... | 04/12/2011 |
| 7906415 | Device having zinc oxide semiconductor and indium/zinc electrode An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof. ... | 03/15/2011 |
| 7883997 | Solid-phase sheet growing substrate and method of manufacturing solid-phase sheet A solid-phase sheet growing substrate (100) includes a main surface (1) and a side surface (2A, 2B) surrounding the main surface (1). The main surface (1) is divided by a peripheral groove (10A) into a surrounding por... | 02/08/2011 |
| 7811911 | Method for manufacturing semiconductor device A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including ... | 10/12/2010 |
| 7718518 | Low temperature doped silicon layer formation A doped silicon layer is formed in a batch process chamber at low temperatures. The silicon precursor for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor is an n-type dopant, such as phosphine. The silicon precursor can be fl... | 05/18/2010 |
| 7666769 | Method for fabricating image display device There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion ... | 02/23/2010 |
| 7629236 | Method for passivating crystal silicon surfaces In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substra... | 12/08/2009 |
| 7589002 | Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the method An oxygen- or nitrogen-terminated silicon nanocrystalline structure is formed on a silicon substrate by forming a silicon film of fine silicon crystals and amorphous silicon on a substrate, and oxidizing or nitriding the formed silicon film with ions and radicals fo... | 09/15/2009 |
| 7585752 | Process for deposition of semiconductor films Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally an... | 09/08/2009 |
| 7572715 | Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amo... | 08/11/2009 |
| 7521341 | Method of direct deposition of polycrystalline silicon A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second... | 04/21/2009 |
| 7432140 | Thin film transistor, thin film transistor substrate, and methods for manufacturing the same A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. Th... | 10/07/2008 |
| 7419886 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 09/02/2008 |
| 7413966 | Method of fabricating polysilicon thin film transistor with catalyst A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface o... | 08/19/2008 |
| 7413967 | Yield improvement in silicon-germanium epitaxial growth A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are fo... | 08/19/2008 |
| 7393715 | Manufacturing method for image pickup apparatus In an image pickup device, a step of forming an embedded plug includes a step of forming a connecting hole in the insulation film in which the embedded plug is to be formed, a metal layer deposition step of depositing a metal layer on the insulation film in which th... | 07/01/2008 |
| 7375005 | Method for reclaiming and reusing wafers Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semico... | 05/20/2008 |
| 7371665 | Method for fabricating shallow trench isolation layer of semiconductor device A method for fabricating an STI layer of a semiconductor device is disclosed, to improve the integration of the semiconductor device in a method of increasing a moat area for a gate line by minimizing an isolation area between moat areas, which includes the steps of... | 05/13/2008 |
| 7368067 | P-type zinc oxide semiconductor film and process for preparation thereof A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end o... | 05/06/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7364976 | Selective etch for patterning a semiconductor film deposited non-selectively A method to selectively etch, and hence pattern, a semiconductor film deposited non-selectively is described. In one embodiment, a carbon-doped silicon film is deposited non-selectively such that the film forms an epitaxial region where deposited on a crystalline su... | 04/29/2008 |
| 7364955 | Methods of manufacturing semiconductor devices having single crystalline silicon layers Methods of manufacturing semiconductor devices having at least one single crystal silicon layer are provided. Pursuant to these methods, a first seed layer that includes silicon is formed. A first non-single crystalline silicon layer is then formed on the first seed... | 04/29/2008 |
| 7361578 | Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorph... | 04/22/2008 |
| 7361221 | Light irradiation apparatus, crystallization apparatus, crystallization method, semiconductor device and light modulation element A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with... | 04/22/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7354555 | Gas flow control system with interlock A system for controlling the flow of gases into a reaction chamber used in processing semiconductor devices includes a safety interlock feature that prevents inadvertent mixing of incompatible, reactive gases. The interlock feature is implemented in an interlock con... | 04/08/2008 |
| 7354858 | Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting ... | 04/08/2008 |
| 7344962 | Method of manufacturing dual orientation wafers Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isola... | 03/18/2008 |
| 7341910 | Method for forming a flash memory by using a microcrystalline polysilicon layer as a floating gate This invention provides a method for forming a microcrystalline polysilicon layer by using silane or dislane with introducing hydrogen gas. This microcrystalline polysilicon layer can be used as a floating gate of a flash memory to improve the character of the flash... | 03/11/2008 |
| 7342293 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends betwe... | 03/11/2008 |
| 7338873 | Method of fabricating a field effect transistor structure with abrupt source/drain junctions Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain extensions includes forming a passivated recess which is back filled... | 03/04/2008 |
| 7329591 | Method for forming silicon-containing film and method for decreasing number of particles A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. Durin... | 02/12/2008 |
| 7326623 | Method of manufacturing display device Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradia... | 02/05/2008 |
| 7315335 | Liquid crystal display device with variations of positions of peaks of depth distributions of concentration of impurities in polycrystalline being within 10% of thickness A liquid crystal display device is provided with a pixel area on a substrate having plural gate lines, plural drain lines, plural thin film transistors and plural pixel electrodes corresponding to the plural thin film transistors, and a drive circuit area disposed a... | 01/01/2008 |
| 7303981 | Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same A method for forming a polysilicon structure is provided. An amorphous silicon structure with a first amorphous silicon region and a second amorphous silicon region is formed in a first region and a second region of a substrate, respectively. The first amorphous sil... | 12/04/2007 |
