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| Number | Title | Issue Date |
| 8183135 | Method for manufacturing thin film transistor having hydrogen feeding layer formed between a metal gate and a gate insulating film A TFT (Thin Film Transistor) is provided in which a hydrogen feeding layer is able to be formed in a position where diffusing distance of hydrogen can be made short without causing an increase in photolithography processes. In the TFT, the hydrogen feeding layer to ... | 05/22/2012 |
| 8143148 | Self-aligned multi-dielectric-layer lift off process for laser diode stripes A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The m... | 03/27/2012 |
| 8110485 | Nanocrystal silicon layer structures formed using plasma deposition technique, methods of forming the same, nonvolatile memory devices having the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A met... | 02/07/2012 |
| 8053339 | Semiconductor device and manufacturing method thereof There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is form... | 11/08/2011 |
| 8048784 | Methods of manufacturing semiconductor devices including a doped silicon layer Methods for manufacturing a semiconductor device include forming a seed layer containing a silicon material on a substrate. An amorphous silicon layer containing amorphous silicon material is formed on the seed layer. The amorphous silicon layer is doped with an imp... | 11/01/2011 |
| 8034698 | Systems and methods for inducing crystallization of thin films using multiple optical paths The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths. An exemplary method includes g... | 10/11/2011 |
| 8030190 | Method of manufacturing crystalline semiconductor thin film Provided is a method of manufacturing a crystalline semiconductor thin film formed on an amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate through induction heating using photo-charges. The method of manu... | 10/04/2011 |
| 8026158 | Systems and methods for processing semiconductor structures using laser pulses laterally distributed in a scanning window Systems and methods process structures on or within a semiconductor substrate using a series of laser pulses. In one embodiment, a deflector is configured to selectively deflect the laser pulses within a processing window. The processing window is scanned over the s... | 09/27/2011 |
| 8017507 | Method of manufacturing a polycrystalline semiconductor thin film A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the sma... | 09/13/2011 |
| 8012861 | Systems and methods for preparing epitaxially textured polycrystalline films The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal... | 09/06/2011 |
| 8008172 | Methods of forming semiconductor devices including multistage planarization and crystalization of a semiconductor layer A method of forming a semiconductor device includes: forming a pattern having trenches on a semiconductor substrate; forming a semiconductor layer on the semiconductor device that fills the trenches; planarizing the semiconductor layer using a first planarization pr... | 08/30/2011 |
| 8003499 | Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the pres... | 08/23/2011 |
| 7998846 | 3-D integrated circuit system and method A semiconductor fabrication system and method are presented. A three dimensional multilayer integrated circuit fabrication method can include forming a first device layer and forming a second device layer on top of the first device layer with minimal detrimental hea... | 08/16/2011 |
| 7998845 | Semiconductor device and method of manufacturing the same To provide a semiconductor device in which a semiconductor film having a leveled main surface is used as an active layer. A semiconductor film (5) having the leveled main surface with an rms of less than 10 nm and a P-V value of less than 70 nm which each ind... | 08/16/2011 |
| 7994030 | Method for manufacturing antenna and method for manufacturing semiconductor device The present invention provides an antenna with low resistance and a semiconductor device having an antenna whose communication distance is improved. A fluid containing conductive particles is applied over an object. After curing the fluid containing the conductive p... | 08/09/2011 |
| 7994029 | Method for patterning crystalline indium tin oxide using femtosecond laser A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystall... | 08/09/2011 |
| 7985665 | Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially melting a portion of the amorphous silicon thin film by irradiating the... | 07/26/2011 |
| 7964480 | Single scan irradiation for crystallization of thin films A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l′, a width w′, and a spacing between adjacent beams d′; irradiatin... | 06/21/2011 |
| 7960261 | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor The present invention relates to a method for manufacturing a polycrystalline semiconductor film that can be used for a semiconductor device. In the method, an amorphous semiconductor film is irradiated with a femtosecond laser to be crystallized. By laser irradiati... | 06/14/2011 |
| 7960262 | Method for manufacturing semiconductor device by applying laser beam to single-crystal semiconductor layer and non-single-crystal semiconductor layer through cap film To provide a low-cost high performance semiconductor device and a method for manufacturing the semiconductor device, a separate single-crystal semiconductor layer having a first region and a non-single-crystal semiconductor layer having a second region are provided ... | 06/14/2011 |
| 7960263 | Amorphization/templated recrystallization method for hybrid orientation substrates The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a firs... | 06/14/2011 |
| 7939435 | Laser annealing method In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects simi... | 05/10/2011 |
| 7927983 | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located ... | 04/19/2011 |
| 7919399 | Semiconductor device manufacturing method and display device Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy ... | 04/05/2011 |
| 7910465 | Manufacturing method of semiconductor substrate A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to... | 03/22/2011 |
| 7906414 | Single-shot semiconductor processing system and method having various irradiation patterns High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of... | 03/15/2011 |
| 7902051 | Method for fabrication of single crystal diodes for resistive memories The present invention, in one embodiment, provides a method of producing a PN junction the method including providing a single crystal substrate; forming an insulating layer on the single crystal substrate; forming a via through the insulating layer to provide an ex... | 03/08/2011 |
| 7902052 | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetitio... | 03/08/2011 |
| 7892952 | Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor fi... | 02/22/2011 |
| 7892954 | Interconnection of electronic devices with raised leads An embodiment of a process of manufacturing an interconnection element for contacting electronic devices is proposed. The process starts with the step of forming a plurality of leads on a main surface of a first substrate; each lead has a first end and a second end.... | 02/22/2011 |
| 7892953 | Method for making multi-crystalline film of solar cell A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p+-type back surfa... | 02/22/2011 |
| 7892955 | Laser mask and crystallization method using the same A crystallization method using a mask includes providing a substrate having a semiconductor layer; positioning a mask over the substrate, the mask having first, second and third blocks, each block having a periodic pattern including a plurality of transmitting regio... | 02/22/2011 |
| 7888247 | Method of forming polycrystalline semiconductor film A method of forming a polycrystalline semiconductor film, which includes irradiating an amorphous semiconductor film formed on an insulating substrate with light to convert the amorphous semiconductor into a polycrystalline semiconductor with laterally grown crystal... | 02/15/2011 |
| 7879700 | Crystallization apparatus and method of amorphous silicon A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by... | 02/01/2011 |
| 7871907 | Mask and method of fabricating a polysilicon layer using the same A mask includes a primary opaque pattern and a number of clusters of secondary opaque patterns. The primary opaque pattern defines a number of strip transparent slits whose extending directions are substantially the same. The clusters of the secondary opaque pattern... | 01/18/2011 |
| 7846821 | Multi-angle rotation for ion implantation of trenches in superjunction devices A method of manufacturing a semiconductor device includes providing a semiconductor wafer and forming at least one first trench in the wafer having first and second sidewalls and a first orientation on the wafer. The first sidewall of the at least one first trench i... | 12/07/2010 |
| 7842589 | Laser irradiation apparatus with means for applying magnetic field According to the present invention, oxygen and nitrogen are effectively prevented from mixing into the semiconductor film by doping Ar or the like in the semiconductor film in advance, and by irradiating the laser light in the atmosphere of Ar or the like. Therefore... | 11/30/2010 |
| 7838397 | Process and system for laser annealing and laser-annealed semiconductor film In a laser annealing process: the first to fourth sections of a bandlike area of a nonmonocrystalline semiconductor film are consecutively scanned and irradiated with laser light so as to produce a fused region in the bandlike area, where the fourth section contains... | 11/23/2010 |
| 7829445 | Method of manufacturing a flash memory device Provided may be a method of fabricating a flash memory device having metal nano particles. The method of manufacturing a flash memory device may include forming a metal oxide thin layer on a semiconductor substrate, forming a floating gate of an amorphous metal sili... | 11/09/2010 |
| 7820531 | Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam an... | 10/26/2010 |
