Did You Know...
...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8187956 | Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film A method for forming a microcrystalline semiconductor film over a base formed of a different material, which has high crystallinity in the entire film and at an interface with the base, is proposed. Further, a method for manufacturing a thin film transistor includin... | 05/29/2012 |
| 8158497 | Planar nonpolar m-plane group III nitride films grown on miscut substrates A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle ... | 04/17/2012 |
| 8158498 | P-channel MOS transistor and fabrication process thereof A p-channel MOS transistor includes a gate electrode formed on a silicon substrate in correspondence to a channel region therein via a gate insulation film, the gate electrode carrying sidewall insulation films on respective sidewall surfaces thereof, and source and... | 04/17/2012 |
| 8101509 | Semiconductor integrated circuit device A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first ... | 01/24/2012 |
| 8088676 | Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom Crystallization-inducing metal elements are introduced onto an amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon “islands”.... | 01/03/2012 |
| 8048783 | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydro... | 11/01/2011 |
| 8043943 | Low-temperature formation of polycrystalline semiconductor films via enhanced metal-induced crystallization A method for forming polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and/or accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, reduces the temperatures req... | 10/25/2011 |
| 8030189 | Method for maintaining a smooth surface of crystallizable material A method for maintaining a smooth surface of crystallizable material is disclosed. First, a substrate is provided. A target material layer is then formed on the substrate, with the target material being a crystallizable material. A protecting layer is subsequently f... | 10/04/2011 |
| 8017506 | Semiconductor device and method for forming the same A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidi... | 09/13/2011 |
| 8008171 | Method of fabricating polycrystalline semiconductor Disclosed is a method of providing a poly-Si layer used in fabricating poly-Si TFT's or devices containing poly-Si layers. Particularly, a method utilizing at least one metal plate covering the amorphous silicon layer or the substrate, and applying RTA (Rapid Therma... | 08/30/2011 |
| 8003498 | Particle beam assisted modification of thin film materials Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the... | 08/23/2011 |
| 7998844 | Method for manufacturing a semiconductor device A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treat... | 08/16/2011 |
| 7989326 | Thin film transistor and method of fabricating the same A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second capping layer pattern sequentially formed on the metal catalyst layer. The... | 08/02/2011 |
| 7981778 | Directional solid phase crystallization of thin amorphous silicon for solar cell applications Embodiments of the present invention provide a method for converting a doped amorphous silicon layer deposited onto a crystalline silicon substrate into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon... | 07/19/2011 |
| 7977217 | Method of crystallizing silicon A method of crystallizing silicon including preparing a substrate having an amorphous silicon film formed thereon, aligning a mask having a first energy region and a second energy region over a first region of the amorphous silicon film formed on the substrate, irra... | 07/12/2011 |
| 7955958 | Method for fabrication of polycrystalline diodes for resistive memories The present invention, in one embodiment, provides a method of producing a PN junction the method including at least the steps of providing a Si-containing substrate; forming an insulating layer on the Si-containing substrate; forming a via through the insulating la... | 06/07/2011 |
| 7923357 | Method for forming poly-silicon film A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas... | 04/12/2011 |
| 7919398 | Microcrystalline silicon deposition for thin film solar applications Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The metho... | 04/05/2011 |
| 7906413 | Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration greater than 5×1019 atoms/cc, and a second epitaxial layer ha... | 03/15/2011 |
| 7897494 | Formation of single crystal semiconductor nanowires A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, ... | 03/01/2011 |
| 7897493 | Inducement of strain in a semiconductor layer Strain is induced in a semiconductor layer. Embodiments include inducing strain by, for example, creation of free surfaces. ... | 03/01/2011 |
| 7888246 | Semiconductor integrated circuit device and a method of fabricating the same A method of fabricating a semiconductor integrated circuit includes forming a first dielectric layer on a semiconductor substrate, patterning the first dielectric layer to form a first patterned dielectric layer, forming a non-single crystal seed layer on the first ... | 02/15/2011 |
| 7863166 | Method of manufacturing semiconductor storage device A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the open... | 01/04/2011 |
| 7842588 | Group-III metal nitride and preparation thereof A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The metho... | 11/30/2010 |
| 7811909 | Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure. The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a p... | 10/12/2010 |
| 7803700 | Crystal imprinting methods for fabricating substrates with thin active silicon layers Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the aper... | 09/28/2010 |
| 7803699 | Polysilicon thin film transistor and method of fabricating the same A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining ... | 09/28/2010 |
| 7767558 | Method of crystallizing amorphous silicon and device fabricated using the same A method of crystallizing amorphous silicon includes forming an amorphous silicon film over a substrate, crystallizing the amorphous silicon film to form a polycrystalline silicon film using a sequential lateral solidification crystallization method, and performing ... | 08/03/2010 |
| 7759230 | System for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in overlap regions, and a mask for facilitating such artifact reduction/elimination An arrangement, process and mask for implementing single-scan continuous motion sequential lateral solidification of a thin film provided on a sample such that artifacts formed at the edges of the beamlets irradiating the thin film are significantly reduced. Accordi... | 07/20/2010 |
| 7749873 | Polycrystalline silicon layer, flat panel display using the same, and methods of fabricating the same A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and methods of fabricating the same are provided. An amorphous silicon layer is formed on a substrate. A first pattern layer, a second pattern layer, and a metal catalyst ... | 07/06/2010 |
| 7709359 | Integrated circuit with dielectric layer A method of fabricating an integrated circuit with a dielectric layer on a substrate is disclosed. One embodiment provides forming the dielectric layer in an amorphous state on the substrate, the dielectric layer having a crystallization temperature; a doping the di... | 05/04/2010 |
| 7709360 | Method for manufacturing a crystalline silicon layer A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. The method further comprises, after metal induced cry... | 05/04/2010 |
| 7700461 | Methods of laterally forming single crystalline thin film regions from seed layers In a method of manufacturing a semiconductor device, a string structure including a selection transistor and a memory cell on a substrate. An insulation layer pattern is formed on the substrate to cover the string structure. The insulation layer pattern includes at ... | 04/20/2010 |
| 7691733 | Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics The present invention provides an improved amorphization/templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a firs... | 04/06/2010 |
| 7670935 | Manufacturing method of semiconductor device Island-like semiconductor films and markers are formed prior to laser irradiation. Markers are used as positional references so as not to perform laser irradiation all over the semiconductor within a substrate surface, but to perform a minimum crystallization on at ... | 03/02/2010 |
| 7662702 | Method for manufacturing a crystalline silicon layer A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. ... | 02/16/2010 |
| 7659185 | Method for forming silicon thin-film on flexible metal substrate Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal... | 02/09/2010 |
| 7651928 | Method for crystallizing a semiconductor thin film A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed. The energy beam is scanned in parallel lines while keeping pitches of not larg... | 01/26/2010 |
| 7651929 | Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates A semiconductor structure with an insulating layer on a silicon substrate, a plurality of electrically-isolated silicon-on-insulator (SOI) regions separated from the substrate by the insulating layer, and a plurality of electrically-isolated silicon bulk regions ext... | 01/26/2010 |
| 7651930 | Method of manufacturing semiconductor storage device A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the open... | 01/26/2010 |
