Class 438/485 - Deposition utilizing plasma (e.g., glow discharge, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process utilizing a plasma or glow discharge during the
No. of patents: 343
Last issue date: 01/10/2012

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Number	Title	Issue Date
8093142	Plasma processing apparatus and plasma processing method There is provided a plasma processing device capable of forming a film in a favorable manner irrespective of deflection generated in an anode electrode and a cathode electrode in the case where an area of the electrodes is increased. A plasma processing devic...	01/10/2012
8053338	Plasma CVD apparatus In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the appar...	11/08/2011
8026157	Gas mixing method realized by back diffusion in a PECVD system with showerhead Embodiments of the present invention generally relate to methods of forming a microcrystalline silicon layer on a substrate in a deposition chamber. In, one embodiment, the method includes flowing a processing gas into a diffuser region between a backing plate and a...	09/27/2011
7998843	Method of forming amorphous silicon layer and method of fabricating LCD using the same Methods and systems for forming an amorphous silicon layer are disclosed for one or more embodiments. For example, a substrate may be provided, and an amorphous silicon layer, in which a ratio of Si—H to Si—H2 has a value equal to or less than 4 to 1,...	08/16/2011
7998842	Atomic layer deposition metallic contacts, gates and diffusion barriers The present invention provides metallic films containing a Group IVB or VB metal, silicon and optionally nitrogen by utilizing atomic layer deposition (ALD). In particularly, the present invention provides a low temperature thermal ALD method of forming metallic sil...	08/16/2011
7981776	Method for depositing silicon The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-contain...	07/19/2011
7981777	Methods of depositing stable and hermetic ashable hardmask films The present invention provides PECVD methods for forming stable and hermetic ashable hard masks (AHMs). The methods involve depositing AHMs using dilute hydrocarbon precursor gas flows and/or high LFRF/HFRF ratios. In certain embodiments, the AHMs are transparent an...	07/19/2011
7968436	Low-K SiC copper diffusion barrier films Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at ...	06/28/2011
7947579	Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the su...	05/24/2011
7939434	Method for fabricating polysilicon film A method of directly depositing a polysilicon film at a low temperature is disclosed. The method comprises providing a substrate and performing a sequential deposition process. The sequential deposition process comprises first and second deposition steps. In the fir...	05/10/2011
7927982	Apparatus for mass-producing silicon-based thin film and method for mass-producing silicon-based thin film A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw m...	04/19/2011
7927981	Apparatus for depositing silicon-based thin film and method for depositing silicon-based thin film A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices tow...	04/19/2011
7902050	Methods and apparatus for incorporating nitrogen in oxide films In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the...	03/08/2011
7902049	Method for depositing high-quality microcrystalline semiconductor materials A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefr...	03/08/2011
7888245	Plasma doping method and method for fabricating semiconductor device using the same A plasma doping method includes providing a doping source over a substrate. The doping source includes dopants that are to be injected into the substrate. At least two different bias voltages are applied to inject the dopants from the doping source to the substrate....	02/15/2011
7727864	Controlled composition using plasma-enhanced atomic layer deposition Metallic-compound films are formed by plasma-enhanced atomic layer deposition (PEALD). According to preferred methods, film or thin film composition is controlled by selecting plasma parameters to tune the oxidation state of a metal (or plurality of metals) in the f...	06/01/2010
7723218	Plasma CVD apparatus In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the appar...	05/25/2010
7622369	Device isolation technology on semiconductor substrate A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more t...	11/24/2009
7557019	Electromagnetic treatment in atmospheric-plasma coating process A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), and a precursor material ...	07/07/2009
7507644	Method of forming dielectric layer of flash memory device A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second dielectric layers are formed by one process at the same time using sil...	03/24/2009
7442627	Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer A transparent conductive layer forming method is disclosed which comprises the steps of introducing a reactive gas to a discharge space, exciting the reactive gas in a plasma state by discharge at atmospheric pressure or at approximately atmospheric pressure, and ex...	10/28/2008
7442628	Semiconductor laser manufacturing method A method for manufacturing a semiconductor laser. As a preparative step for coating an end face of a resonator with a dielectric film, a cleavage plane of a semiconductor laminated structure that is to be the end face is subjected to a plasma cleaning to prevent a c...	10/28/2008
7439191	Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-...	10/21/2008
7419887	Laser assisted nano deposition An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto t...	09/02/2008
7393723	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la...	07/01/2008
7384828	Semiconductor film, semiconductor device and method of their production A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The s...	06/10/2008
7371332	Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher...	05/13/2008
7368317	Method of producing an N-type diamond with high electrical conductivity The invention relates to a method of producing an n-type diamond. The inventive method comprises an n-doping stage during which a donor species is vacuum diffused in a diamond that was initially doped with an acceptor, in order to form donor groups containing the do...	05/06/2008
7368367	Method for forming a semiconductor A preparing method of a semiconductor, particularly a preparing method of a polycrystal semiconductor film which has a good electrical property is disclosed. In order to obtain a non-crystalline silicon film containing a lot of combination of hydrogen and silicon, a...	05/06/2008
7358194	Sequential deposition process for forming Si-containing films A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film ...	04/15/2008
7354864	Method of producing semiconductor device A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of th...	04/08/2008
7354801	Method for manufacturing semiconductor device In the case where an integrated circuit formed of a thin film is formed over a substrate and peeled from the substrate, a fissure (also referred to as crack) is generated in the integrated circuit in some cases. The present invention is to restrain the generation of...	04/08/2008
7339271	Metal-metal oxide etch stop/barrier for integrated circuit interconnects Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interco...	03/04/2008
7323358	Method and system for sizing a load plate A method of sizing a load plate for an Application Specific Integrated Circuit (ASIC) assembly includes compressing the load plate prior to installation in the ASIC assembly. The compression is adjusted to cause the load plate to provide a target load when installed...	01/29/2008
7320896	Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur...	01/22/2008
7300859	Atmospheric glow discharge with concurrent coating deposition A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), a precursor material is i...	11/27/2007
7279398	Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure....	10/09/2007
7270713	Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form...	09/18/2007
7262431	Semiconductor thin film forming method and semiconductor device A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin fi...	08/28/2007
7253086	Recessed drain extensions in transistor device A method of forming an integrated circuit transistor (50). The method provides a first semiconductor region (52) and forms (110) a gate structure (54x) in a fixed position relative to the first semiconductor region. The gate st...	08/07/2007

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Class 438/485 - Deposition utilizing plasma (e.g., glow discharge, etc.)