Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8168516 | Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is... | 05/01/2012 |
| 8158496 | Method for preparing compound semiconductor substrate Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids t... | 04/17/2012 |
| 8143147 | Methods and systems for forming thin films A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodimen... | 03/27/2012 |
| 8124505 | Two stage plasma etching method for enhancement mode GaN HFET A two stage plasma etching technique is described that allows the fabrication of an enhancement mode GaN HFET/HEMT. A gate recess area is formed in the Aluminum Gallium Nitride barrier layer of an GaN HFET/HEMT. The gate recess is formed by a two stage etching proce... | 02/28/2012 |
| 8119506 | Group 6a/group 3a ink and methods of making and using same A selenium/Group 3a ink, comprising (a) a selenium/Group 3a complex which comprises a combination of, as initial components: a selenium component comprising selenium; an organic chalcogenide component having a formula selected from RZ—Z′R′ and R | 02/21/2012 |
| 8105921 | Gallium nitride materials and methods The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and t... | 01/31/2012 |
| 8030188 | Methods of forming a compound semiconductor device including a diffusion region Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound se... | 10/04/2011 |
| 7968435 | Method and device for growing pseudomorphic AlInAsSb on InAs A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the... | 06/28/2011 |
| 7964479 | Low-temperature formation of layers of polycrystalline semiconductor material The present invention provides a method for forming a layer (6) of polycrystalline semiconductor material on a substrate (1). The method comprises providing at least one catalyst particle (4) on a substrate (1), the at least one catalyst ... | 06/21/2011 |
| 7960260 | Formation of nanowhiskers on a substrate of dissimilar material A method for forming a nanowhisker of, e.g., a III-V semiconductor material on a silicon substrate, comprises: preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, so that the substrate surface is esse... | 06/14/2011 |
| 7951693 | III-nitride light emitting devices grown on templates to reduce strain In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve th... | 05/31/2011 |
| 7915150 | Method of manufacturing nitride semiconductor substrate using epitaxial growth A method of manufacturing a nitride semiconductor substrate according to example embodiments may include forming a buffer layer on a (100) plane of a silicon (Si) substrate. The buffer layer may have a hexagonal crystal system and a (1010) plane. A nitride semicondu... | 03/29/2011 |
| 7910464 | Method for manufacturing a semiconductor device having a III-V nitride semiconductor A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Sc... | 03/22/2011 |
| 7902048 | Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The ... | 03/08/2011 |
| 7897492 | Apparatus and method for transformation of substrate A method is disclosed for forming a layer of a wide bandgap material in a non-wide bandgap material. The method comprises providing a substrate of a non-wide bandgap material and converting a layer of the non-wide bandgap material into a layer of a wide bandgap mate... | 03/01/2011 |
| 7883996 | Method of fabricating single crystal gallium nitride semiconductor substrate, nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to make one or more single crystal gallium nitride substrates. The ingot of single crystal gallium nitride is... | 02/08/2011 |
| 7875534 | Realizing N-face III-nitride semiconductors by nitridation treatment A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridatio... | 01/25/2011 |
| 7863164 | Method of growing GaN using CVD and HVPE A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase... | 01/04/2011 |
| 7851338 | Graded core/shell semiconductor nanorods and nanorod barcodes Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor... | 12/14/2010 |
| 7842587 | III-V MOSFET fabrication and device A semiconductor fabrication process includes forming a gate dielectric layer (120) overlying a substrate (101) that includes a III-V semiconductor compound. The gate dielectric layer is patterned to produce a gate dielectric structure (121) that... | 11/30/2010 |
| 7829444 | Field effect transistor manufacturing method Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or t... | 11/09/2010 |
| 7811908 | Method of storing GaN substrate, stored substrate, and semiconductor device and method of its manufacture Affords a method of storing GaN substrates from which semiconductor devices of favorable properties can be manufactured, the stored substrates, and semiconductor devices and methods of manufacturing the semiconductor devices. In the GaN substrate storing method, a G... | 10/12/2010 |
| 7723216 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on ... | 05/25/2010 |
| 7723217 | Method for manufacturing gallium nitride single crystalline substrate using self-split The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitrid... | 05/25/2010 |
| 7709358 | Integrated light emitting device and photodiode with OHMIC contact Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a vertical cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also... | 05/04/2010 |
| 7687379 | Method of manufacturing In(As)Sb semiconductor on lattice-mismatched substrate and semiconductor device using the same Disclosed is a method of manufacturing a semiconductor device whereby InAs(1-x)Sbx semiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs substrate or a Si substrate. According to the method, ... | 03/30/2010 |
| 7666764 | Compound semiconductor material and method for forming an active layer of a thin film transistor device A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth m... | 02/23/2010 |
| 7666765 | Method for forming a group III nitride material on a silicon substrate Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate... | 02/23/2010 |
| 7638414 | Method of forming nitride semiconductor layer on patterned substrate and light emitting diode having the same A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this o... | 12/29/2009 |
| 7595259 | Method for manufacturing compound semiconductor substrate with pn junction A compound semiconductor substrate manufacturing method suitable for manufacturing a compound semiconductor element having high electrical characteristics. The compound semiconductor substrate manufacturing method is a method for manufacturing a compound semiconduct... | 09/29/2009 |
| 7547615 | Deposition over mixed substrates using trisilane Trisilane is used in chemical vapor deposition methods to deposit silicon-containing films over mixed substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, hig... | 06/16/2009 |
| 7498244 | Method for fabricating GaN-based nitride layer The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0 | 03/03/2009 |
| 7491627 | III-nitride device and method with variable epitaxial growth direction A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the... | 02/17/2009 |
| 7491626 | Layer growth using metal film and/or islands A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface o... | 02/17/2009 |
| 7422966 | Technique for passivation of germanium A method of passivating germanium that comprises providing a germanium material and carburizing the germanium material to form a germanium carbide layer. The germanium carbide layer may be formed by microwave plasma-enhanced chemical vapor deposition by exposing the... | 09/09/2008 |
| 7407872 | Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microsco... | 08/05/2008 |
| 7407869 | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined b... | 08/05/2008 |
| 7399687 | Substrate of gallium nitride single crystal and process for producing the same The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) havi... | 07/15/2008 |
| 7396743 | Low temperature epitaxial growth of silicon-containing films using UV radiation A method of preparing a clean substrate surface for blanket or selective epitaxial deposition of silicon-containing and/or germanium-containing films. In addition, a method of growing the silicon-containing and/or germanium-containing films, where both the substrate... | 07/08/2008 |
| 7393705 | Methods of fabricating light emitting diodes that radiate white light A method for fabricating an LED that radiates white spectrum light. A phosphor that radiates a white spectrum after excitation in the blue or UV spectrum is uniformly deposited onto a GaN epitaxial wafer prior to die separation and packaging. This allows wafer-level... | 07/01/2008 |
