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| Number | Title | Issue Date |
| 8148245 | Method for producing a-IGZO oxide thin film There is provided a method for producing an a-IGZO oxide thin film by sputtering, which can control the carrier density of the film to a given value with high reproducibility. The method is an amorphous In—Ga—Zn—O based oxide thin film production method includ... | 04/03/2012 |
| 8143146 | Method for manufacturing a nonvolatile storage device A method for manufacturing a nonvolatile storage device with a plurality of unit memory layers stacked therein is provided. Each of the unit memory layers includes: a first interconnect extending in a first direction; a second interconnect extending in a second dire... | 03/27/2012 |
| 8105920 | Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof A semiconductor device with an amorphous silicon (a-Si) metal-aluminum oxide-semiconductor (MAS) memory cell structure. The device includes a substrate, a dielectric layer overlying the substrate, and one or more source or drain regions embedded in the dielectric la... | 01/31/2012 |
| 8093141 | Method of fabricating a semiconductor device According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first plane orientation, and irradiating with micro wave on the amorphous l... | 01/10/2012 |
| 8093140 | Amorphous Ge/Te deposition process Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous ... | 01/10/2012 |
| 8088675 | Methods of making an emitter having a desired dopant profile A method for obtaining a desired dopant profile of an emitter for a solar cell which includes depositing a first amorphous silicon layer having a first doping level over an upper surface of the crystalline silicon substrate, depositing a second amorphous silicon lay... | 01/03/2012 |
| 8071466 | Zinc sulfide crystals for optical components Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically, ZnS single crystals or multi-grain ZnS crystals of pure or substanti... | 12/06/2011 |
| 8048782 | Plasma deposition of amorphous semiconductors at microwave frequencies Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a ... | 11/01/2011 |
| 8039372 | Methods of manufacturing variable resistance non-volatile memory devices including a uniformly narrow contact layer A phase changeable memory device is manufactured by forming at least one insulating layer on a substrate. A preliminary first electrode is formed on the insulating layer. The preliminary first electrode is partially etched to form a first electrode electrically conn... | 10/18/2011 |
| 8021966 | Method fabricating nonvolatile memory device A method of fabricating a nonvolatile memory device includes; forming a first sacrificial layer pattern including a first open area that extends in a first direction on a lower dielectric layer, forming a pre-lower dielectric layer pattern including a recess that ex... | 09/20/2011 |
| 7923356 | Semiconductor film, semiconductor device and method for manufacturing same Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of ... | 04/12/2011 |
| 7833885 | Microcrystalline silicon thin film transistor Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a h... | 11/16/2010 |
| 7825013 | Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circ... | 11/02/2010 |
| 7790582 | Method for fabricating polysilicon liquid crystal display device A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist p... | 09/07/2010 |
| 7745314 | Method of degassing thin layer and method of manufacturing silicon thin film A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H2, Ar, He, Xe, O2, and the like present in... | 06/29/2010 |
| 7732307 | Method of forming amorphous TiN by thermal chemical vapor deposition (CVD) A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution whe... | 06/08/2010 |
| 7638413 | Method of fabricating semiconductor by nitrogen doping of silicon film A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to ... | 12/29/2009 |
| 7598159 | Method of fabricating thin film transistor substrate and thin film transistor substrate produced using the same A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming... | 10/06/2009 |
| 7592240 | Method for forming a gate structure through an amorphous silicon layer and applications thereof A fabrication method for forming a gate structure through an amorphous silicon layer includes providing a substrate layer, forming an amorphous silicon layer of a selected thickness on the substrate layer at a reaction temperature between about 520° C. and 560° C.... | 09/22/2009 |
| 7429749 | Strained-silicon for CMOS device using amorphous silicon deposition or silicon epitaxial growth An integrated circuit (IC) includes a strained-silicon layer formed by deposition of amorphous silicon onto either a region of a semiconductor layer that has been implanted with ions to create a larger spacing between atoms in a crystalline lattice of the semiconduc... | 09/30/2008 |
| 7425349 | Method of manufacturing a low temperature polysilicon film A method of manufacturing a low temperature polysilicon film is provided. A first metal layer is formed on a substrate; and openings have been formed in the first metal layer. A second metal layer is formed on the first metal layer: and a hole corresponding to each ... | 09/16/2008 |
| 7425491 | Nanowire transistor with surrounding gate One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment of the method, a pillar of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy process is performed to crys... | 09/16/2008 |
| 7416957 | Method for forming a strained Si-channel in a MOSFET structure Method for forming a strained Si layer on a substrate (1), including formation of: an epitaxial SiGe layer (4) on a Si surface, and of: the strained Si layer by epitaxial growth of the Si layer on top of the epitaxial SiGe layer (4), the Si laye... | 08/26/2008 |
| 7399685 | Laser beam pattern mask and crystallization method using the same A laser beam pattern mask includes an opaque substrate and a plurality of transmission portions formed in the substrate to transmit light, wherein each of the transmission portions extend in a first direction while being uniformly spaced apart from one another by a ... | 07/15/2008 |
| 7396744 | Method of forming a semiconductor thin film A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openin... | 07/08/2008 |
| 7393715 | Manufacturing method for image pickup apparatus In an image pickup device, a step of forming an embedded plug includes a step of forming a connecting hole in the insulation film in which the embedded plug is to be formed, a metal layer deposition step of depositing a metal layer on the insulation film in which th... | 07/01/2008 |
| 7393729 | Method for fabricating semiconductor device [Problem] To provide technology that allows, by controlling a crystal orientation, forming a crystalline semiconductor film aligned in orientation and obtaining a crystalline semiconductor film whose impurity concentration is reduced. [Means, for Resolution] ... | 07/01/2008 |
| 7391050 | Phase change memory device with thermal insulating layers A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity or material layers having low... | 06/24/2008 |
| 7384476 | Method for crystallizing silicon A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the ... | 06/10/2008 |
| 7364976 | Selective etch for patterning a semiconductor film deposited non-selectively A method to selectively etch, and hence pattern, a semiconductor film deposited non-selectively is described. In one embodiment, a carbon-doped silicon film is deposited non-selectively such that the film forms an epitaxial region where deposited on a crystalline su... | 04/29/2008 |
| 7361577 | Method of manufacturing semiconductor device In a step of doping a silicon-based semiconductor film as a TFT active layer such as channel doping or the like, a protective film is formed by a CVD method as a pretreatment so as to prevent the silicon-based semiconductor film from being contaminated and etched. H... | 04/22/2008 |
| 7361578 | Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorph... | 04/22/2008 |
| 7358122 | High performance FET devices and methods thereof Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a l... | 04/15/2008 |
| 7359010 | Method for producing display device In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surfac... | 04/15/2008 |
| 7358164 | Crystal imprinting methods for fabricating substrates with thin active silicon layers Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the aper... | 04/15/2008 |
| 7351633 | Method of fabricating semiconductor device using selective epitaxial growth A method of fabricating a semiconductor device using selective epitaxial growth (SEG) is disclosed. The method comprises; forming a seed window exposing a portion of a substrate through an interlayer insulating layer, growing a single crystal silicon SEG layer in th... | 04/01/2008 |
| 7351646 | Laser annealing method and laser annealing device In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which a temperature holding layer comprising water vapor is formed on the ... | 04/01/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7344898 | Method for manufacturing semiconductor device After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is... | 03/18/2008 |
| 7344962 | Method of manufacturing dual orientation wafers Disclosed is a method of manufacturing dual orientation wafers. A trench is formed in a multi-layer wafer to a silicon substrate with a first crystalline orientation. The trench is filled with a silicon material (e.g., amorphous silicon or polysilicon trench). Isola... | 03/18/2008 |
