Did You Know...
...that power steering was invented by independent inventor Francis W. Davis? As chief engineer in the 1920s of the truck division of the Pierce Arrow Motor Car Company, he saw how hard it was to steer heavy vehicles. So that he would be able to keep the profits from his future invention, Davis left his job, rented a small engineering shop in Waltham, Mass., and developed a hydraulic power steering system that led to power steering.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8183134 | Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape of atoms from the region and enables the reduction or elimination of ... | 05/22/2012 |
| 8178427 | Epitaxial methods for reducing surface dislocation density in semiconductor materials The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a ... | 05/15/2012 |
| 8173524 | Process for epitaxially growing epitaxial material regions Methods form epitaxial materials by forming at least two gate stacks on a silicon substrate and forming sidewall spacers on sides of the gate stacks. Such methods pattern a recess in the silicon substrate between adjacent ones of the gate stacks. The methods also pr... | 05/08/2012 |
| 8148244 | Lateral growth method for defect reduction of semipolar nitride films A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective... | 04/03/2012 |
| 8119505 | Method of making group III nitride-based compound semiconductor A method of making a group III nitride-based compound semiconductor includes providing a semiconductor substrate comprising group III nitride-based compound semiconductor, polishing a surface of said semiconductor substrate such that said polished surface includes a... | 02/21/2012 |
| 8097528 | Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the st... | 01/17/2012 |
| 8067300 | AlInGaN mixture crystal substrate, method of growing same and method of producing same Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0 | 11/29/2011 |
| 8062963 | Method of fabricating a semiconductor device having an epitaxy region A method is described which includes providing a semiconductor substrate and forming a trench in the semiconductor substrate. An epitaxy region is grown in the trench. An amorphous layer is deposited overlying the epitaxy region. The semiconductor substrate is then ... | 11/22/2011 |
| 8039371 | Reduced defect semiconductor-on-insulator hetero-structures A semiconductor-on-insulator hetero-structure and a method for fabricating the semiconductor -on-insulator hetero-structure include a crystalline substrate and a dielectric layer located thereupon having an aperture that exposes the crystalline substrate. The semico... | 10/18/2011 |
| 8034697 | Formation of devices by epitaxial layer overgrowth Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments o... | 10/11/2011 |
| 8034696 | Manufacturing method of semiconductor device It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions ... | 10/11/2011 |
| 8026156 | Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exp... | 09/27/2011 |
| 8012860 | Atomic layer deposition for functionalizing colloidal and semiconductor particles A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD layer comprises an inorganic material which enables improved optical and electrical properties for the nanoc... | 09/06/2011 |
| 8008170 | Method for manufacturing semiconductor device There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by t... | 08/30/2011 |
| 7981775 | Nitride semiconductor light-emitting device having high light efficiency and method of manfacturing the same Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer o... | 07/19/2011 |
| 7955957 | Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so cal... | 06/07/2011 |
| 7943494 | Method for blocking dislocation propagation of semiconductor The present invention provides a method for blocking the dislocation propagation of a semiconductor. A semiconductor layer is formed by epitaxial process on a substrate. A plurality of recesses is formed on the semiconductor layer by etching fragile locations of the... | 05/17/2011 |
| 7935615 | III-V nitride semiconductor substrate and its production method A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while f... | 05/03/2011 |
| 7923355 | Manufacturing method for semiconductor device and manufacturing apparatus for semiconductor device A manufacturing method for a semiconductor device includes retaining a wafer in a reaction chamber, supplying first process gas including source gas and second process gas containing H2 or inert gas onto the wafer in a rectified state alternately in a pre... | 04/12/2011 |
| 7919397 | Method for reducing agglomeration of Si layer, method for manufacturing semiconductor device and vacuum treatment apparatus The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-r... | 04/05/2011 |
| 7888244 | Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiOlayer A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the int... | 02/15/2011 |
| 7863163 | Epitaxial deposition of doped semiconductor materials A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a f... | 01/04/2011 |
| 7846820 | Nitride semiconductor device and process for producing the same A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a p... | 12/07/2010 |
| 7811907 | Method for manufacturing semiconductor device and epitaxial growth equipment A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The... | 10/12/2010 |
| 7790581 | Semiconductor substrate with multiple crystallographic orientations A pair of semiconductor structures and a method for fabricating a semiconductor structure each utilize a semiconductor substrate having a first crystallographic orientation, and a dielectric layer located thereupon. The method provides for epitaxially growing a semi... | 09/07/2010 |
| 7732306 | Methods for producing improved epitaxial materials This invention provides methods for fabricating substantially continuous layers of group III nitride semiconductor materials having low defect densities. The methods include epitaxial growth of nucleation layers on a base substrate, thermally treatment of said nucle... | 06/08/2010 |
| 7718516 | Method for epitaxial growth of (110)-oriented SrTiOthin films on silicon without template A process and structure utilizes pulsed laser deposition technique to grow SrTiO3 (STO) films with single (110) out-of-plane orientation upon a surface of all (100), (110) and (111)-oriented silicon (Si) substrates. No designed buffer layer is needed bene... | 05/18/2010 |
| 7704860 | Nitride-based semiconductor device and method for fabricating the same A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least... | 04/27/2010 |
| 7691732 | Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device A manufacturing method of a nitride substrate includes the steps of preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the ste... | 04/06/2010 |
| 7687378 | Fabricating method of nitride semiconductor substrate and composite material substrate A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconducto... | 03/30/2010 |
| 7682947 | Epitaxial semiconductor deposition methods and structures Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-f... | 03/23/2010 |
| 7682946 | Apparatus and process for plasma-enhanced atomic layer deposition Embodiments of the invention provide a method for forming a material on a substrate during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a method is provided which includes flowing at least one process g... | 03/23/2010 |
| 7674693 | Method for manufacturing semiconductor device A method forming a semiconductor device includes forming a domed gate oxide film to relieve stress resulting from a thermal expansion rate difference of an oxide film and silicon film during a subsequent thermal process and preventing leakage current between source/... | 03/09/2010 |
| 7670933 | Nanowire-templated lateral epitaxial growth of non-polar group III nitrides A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nan... | 03/02/2010 |
| 7670934 | Methods for fabricating MOS devices having epitaxially grown stress-inducing source and drain regions Methods of fabricating a semiconductor device on and in a semiconductor substrate having a first region and a second region are provided. In accordance with an exemplary embodiment of the invention, a method comprises forming a first gate stack overlying the first r... | 03/02/2010 |
| 7670932 | MOS structures with contact projections for lower contact resistance and methods for fabricating the same MOS structures with contact projections for lower contact resistance and methods for fabricating such MOS structures have been provided. In an embodiment, a method comprises providing a semiconductor substrate, fabricating a gate stack on the substrate, and forming ... | 03/02/2010 |
| 7648893 | Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics A method for manufacturing a semiconductor including the steps of supplying a substrate having a support with one face supporting a strained silicon thin layer; forming a first mask on a portion of the strained silicon thin layer; epitaxy of Si1-xGex... | 01/19/2010 |
| 7608526 | Strained layers within semiconductor buffer structures A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method of manufacturing the same. The a... | 10/27/2009 |
| 7589001 | Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concav... | 09/15/2009 |
| 7579263 | Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiOlayer A method of forming a virtually defect free lattice mismatched nanoheteroepitaxial layer is disclosed. The method includes forming an interface layer on a portion of a substrate. A plurality of seed pads are then formed by self-directed touchdown by exposing the int... | 08/25/2009 |
