Did You Know...
...that in the early 1940s GE engineer James Wright was charged with a task of utmost importance to the war effort: develop a cheap substitute for rubber that could be used to produce tires, gas masks and a whole host of military gear. Wright tackled the task diligently -- and wound up inventing Silly Putty.
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| Number | Title | Issue Date |
| 7368312 | MEMS sensor suite on a chip The MEMS Sensor Suite on a Chip provides the capability, monolithically integrated onto one MEMS chip, to sense temperature, humidity, and two axes of acceleration. The device incorporates a MEMS accelerometer, a MEMS humidity sensor, and a MEMS temperature sensor o... | 05/06/2008 |
| 7368311 | Method and system for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules An interconnect module and a method of manufacturing the same. The method of making an interconnect module on a substrate comprises forming an interconnect section on the substrate. The interconnect section comprises at least two metal interconnect layers separated ... | 05/06/2008 |
| 7364928 | Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus In a circuit to drive driven elements such, as electro-optical elements, an electro-optical device has an element layer, a wire-forming layer, and an electronic component layer in order to suppress variation in characteristics of active elements. The element layer h... | 04/29/2008 |
| 7364931 | Capacitance detection type sensor and manufacturing method thereof Capacitance sensor electrodes are arranged in a form of matrix on a semiconductor substrate and coated with a cover film. These capacitance sensor electrodes are connected to a drive circuit. ESD electrodes are arranged in the vicinities of corner portions of the ca... | 04/29/2008 |
| 7364932 | Electronic device and method of manufacturing the same In the present invention, an etching hole 21 is formed in a polysilicon film 14 as a cavity-wall member. Through the etching hole 21, hydrofluoric acid is injected, so as to dissolve a silicon oxide film 13, thereby forming a cavity 22... | 04/29/2008 |
| 7364930 | Method for producing micromechanical and micro-optic components consisting of glass-type materials What is proposed here is a method of structuring surfaces of glass-type materials and variants of this method, comprising the following steps of operation: providing a semiconductor substrate, structuring, with the formation of recesses, of at least one surface of t... | 04/29/2008 |
| 7364933 | Image sensor and method for forming the same A method for forming an image sensor is provided. The method includes providing a semiconductor substrate having a pixel region and a peripheral circuit region, forming a photoelectric transformation section at the semiconductor substrate of the pixel region, formin... | 04/29/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7365364 | Sensor semiconductor device with sensor chip A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the substrate an... | 04/29/2008 |
| 7365823 | Method for cutting liquid crystal display panel and method for fabricating individual liquid crystal display cells using the same A method for cutting a liquid crystal display panel includes forming a first scribe line along attached first and second mother substrates to form a first region having a plurality of first-sized LCD panels and a first edge of the first region and to form a second r... | 04/29/2008 |
| 7365024 | Chemical solution coating method and chemical solution coating apparatus A chemical solution coating method includes: a first step of disposing a semiconductor substrate on a substrate supporting unit with a first face to be coated with a chemical solution facing upward; a second step of moving a chemical solution spraying member for spr... | 04/29/2008 |
| 7361518 | Semiconductor element, semiconductor device, and method for fabrication thereof A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion. ... | 04/22/2008 |
| 7361966 | Actuator chip for inkjet printhead with electrostatic discharge protection An inkjet printhead chip includes electrostatic discharge (ESD) circuits to protect the chip during ESD events, including one preventing a thin dielectric layer on a substrate from breakdown. In one embodiment, the chip includes an ESD circuit essentially dedicated ... | 04/22/2008 |
| 7360293 | Method of manufacturing recognition sensor A method of manufacturing a surface shape recognition sensor. A sacrificial film is formed on an interlevel dielectric to cover a lower electrode while keeping an upper portion of a support electrode exposed. An upper electrode is formed on the sacrificial film and ... | 04/22/2008 |
| 7358151 | Microelectromechanical system microphone fabrication including signal processing circuitry on common substrate A MEMS microphone is formed on a single substrate that also includes microelectronic circuitry. High-temperature tolerance metals are used to form contacts in a metallization step before performing deep reactive ion etching and back patterning steps to form a MEMS m... | 04/15/2008 |
| 7358553 | System and method for reducing shorting in memory cells An MRAM device includes an array of magnetic memory cells having an upper conductive layer and a lower conductive layer separated by a barrier layer. To reduce the likelihood of electrical shorting across the barrier layers of the memory cells, spacers can be formed... | 04/15/2008 |
| 7356922 | Method of fabricating a rate gyroscope and accelerometer multisensor Three magnetic substrates are provided, the first substrate forms the rotor and the other two form the outer stator. A series of spaced concentric grooves and spaced spiral grooves are formed in the central region of both faces of the first substrate. A hole is plac... | 04/15/2008 |
| 7357025 | Micromachined apparatus with co-linear drive arrays A mass includes a first set of drive fingers interdigitated with a first array of fixed drive fingers and a second set of drive fingers interdigitated with a second array of fixed drive fingers. Each array of fixed drive fingers is affixed to a substrate using a plu... | 04/15/2008 |
| 7357963 | Apparatus and method of crystallizing amorphous silicon A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of... | 04/15/2008 |
| 7358105 | Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 04/15/2008 |
| 7358201 | Methods of forming channels on an integrated circuit die and die cooling systems including such channels A method of forming channels on a die or other substrate. Also disclosed are liquid cooling systems including such channels. ... | 04/15/2008 |
| 7354792 | Manufacture of silicon-based devices having disordered sulfur-doped surface layers The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosec... | 04/08/2008 |
| 7355228 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is fo... | 04/08/2008 |
| 7353711 | Capacitive sensor A capacitive sensor including a housing having a hermetically sealed cavity, a plate in the cavity, a diaphragm forming a part of the cavity and spaced from the plate, a conductive layer on the first diaphragm, and a second conductive layer on the plate, the first a... | 04/08/2008 |
| 7354789 | CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a tra... | 04/08/2008 |
| RE40230 | Two section blue laser diode with reduced output power droop A III-V nitride blue laser diode has an amplifier region and a modulator region. The amplifier region has a constant current to keep the region near the lasing threshold. The modulator region has a small varying forward current or reverse bias voltage which controls... | 04/08/2008 |
| 7354791 | Solid-state imaging device, method for manufacturing the same, and method for driving the same In a solid-state imaging device in which a N-type photoelectric conversion region is formed in a P−-type well region, a light-blocking film and a transparent conductive film are formed on the N-type photoelectric conversion region with a second interlay... | 04/08/2008 |
| 7351605 | Method of manufacturing a semiconductor device The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source... | 04/01/2008 |
| 7352047 | Systems and methods for integration of heterogeneous circuit devices A heterogeneous device comprises a substrate and a plurality of heterogeneous circuit devices defined in the substrate. In embodiments, a plurality of heterogeneous circuit devices are integrated by successively masking and ion implanting the substrate. The heteroge... | 04/01/2008 |
| 7352404 | Digital camera including defocus prevention A digital camera includes a mirror box having a lens mount to which a photographing lens is mounted; an image pick-up device having an imaging surface for capturing an object image which is focused on the imaging surface through the photographing lens; and a frame p... | 04/01/2008 |
| 7351598 | Solid-stage image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a seco... | 04/01/2008 |
| 7351602 | Process for producing a thin film with MEMS probe circuits A process for producing a thin film with MEMS probe circuits by using semiconductor process technology comprises steps of providing a flatted process substrate; forming a separable interface on the flatted process substrate; forming a probe circuit thin film with el... | 04/01/2008 |
| 7352039 | Methods and apparatuses for microelectronic assembly having a material with a variable viscosity around a MEMS device Various methods and apparatuses are described in which a micro-electro-mechanical systems (MEMS) device is encapsulated with a material having a variable viscosity with a viscosity value high enough to retard foreign material from contacting the MEMS device during a... | 04/01/2008 |
| 7348203 | Hermetic packaging A method of hermetically packaging an electronic device (8), in an enclosure (2) comprising mutually inter-engageable first and second housing members (4, 6), comprising the steps of securing the electronic device (8) to the first housing... | 03/25/2008 |
| 7347094 | Coupling apparatus for inertial sensors A coupling apparatus allows anti-phase movements of inertial sensor element frames along parallel axes but substantially prevents in-phase movements of the frames. The coupling apparatus includes a bar coupled between first and second sensor element frames and at le... | 03/25/2008 |
| 7348651 | Pinned photodiode fabricated with shallow trench isolation A method and system is disclosed for reducing or eliminating leakage between a pinned photodiode and shallow trench isolation structure fabricated therewith while optimizing the sensitivity of the photodiode. Provided is a system with an N+ region implanted in a P-t... | 03/25/2008 |
| 7347099 | Pressure transducer with external heater An improved pressure transducer is disclosed. The transducer includes a connector, an enclosure, a sensor portion, and an external heater disposed to heat the sensor portion. In some aspects, the sensor portion includes a sensor constructed from a brittle material a... | 03/25/2008 |
| 7348655 | Organic electro luminescence device and fabrication method thereof An organic electro luminescence device is provided. A thin film transistor (TFT) is formed within a sub-pixel region defined by a gate line and a data line on a substrate. A passivation layer and a first electrode are sequentially formed on the substrate where the T... | 03/25/2008 |
| 7349141 | Method and post structures for interferometric modulation An interferometric modulator includes a post structure comprising an optical element. In a preferred embodiment, the optical element in the post structure is a reflective element, e.g., a mirror. In another embodiment, the optical element in the post structure is an... | 03/25/2008 |
| 7345703 | CMOS image sensor including photodiodes having different depth according to wavelength of light An image sensor capable of preventing the cross-talk phenomenon due to a deep penetration depth and a low absorption coefficient of red light in a photodiode region and a method for fabricating the same, wherein the photodiode for collecting incident light has diffe... | 03/18/2008 |
