Did You Know...
...that when IBM conducted a market study of Chester Carlson's invention in 1959, the company concluded that it would take only 5000 units of his new product to saturate the market? IBM therefore declined to be part of the new product introduction. Too bad for IBM. Carlson's invention was the xerography process, and his new product was the beginning of the Xerox Corporation. It is estimated that every day, worldwide, 3,000,000,000 copies are made!!
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| Number | Title | Issue Date |
| 8138004 | Photoelectric conversion device, manufacturing method thereof and semiconductor device A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivi... | 03/20/2012 |
| 8114696 | CMOS image sensor with asymmetric well structure of source follower Provided is a CMOS image sensor with an asymmetric well structure of a source follower. The CMOS image sensor includes: a well disposed in an active region of a substrate; a drive transistor having one terminal connected to a power voltage and a first gate electrode... | 02/14/2012 |
| 8114694 | Method for manufacturing back side illuminaton image sensor A method of manufacturing a back side illumination image sensor according to an embodiment includes: forming an ion implantation layer by implanting ions throughout the front side of a first substrate; defining a pixel region by forming a device isolation region on ... | 02/14/2012 |
| 8114695 | Solid-state image pickup element, solid-state image pickup device and production method therefor A method of producing a solid-state image pickup element includes forming a hole portion, forming a first-conductive type high-concentration impurity region in a bottom wall of the hole portion, and forming a first-conductive type high-concentration impurity-doped e... | 02/14/2012 |
| 8105858 | CMOS imager having a nitride dielectric An imaging device formed as a CMOS semiconductor integrated circuit includes a nitrogen containing insulating material beneath a photogate. The nitrogen containing insulating material, preferably be one of a silicon nitride layer, an ONO layer, a nitrode/oxide layer... | 01/31/2012 |
| 8093084 | Semiconductor device with photonics A method for forming a semiconductor structure having a transistor region and an optical device region includes forming a transistor in and on a first semiconductor layer of the semiconductor structure, wherein the first semiconductor layer is over a first insulatin... | 01/10/2012 |
| 8071410 | Multi spectral sensor A light sensor having a light conversion element between first and second electrodes is disclosed. The light conversion element includes a body of semiconductor material having first and second surfaces. The body of semiconductor material is of a first conductivity ... | 12/06/2011 |
| 8067258 | Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness ranging from about 3 Å to about 1,000 Å, wherein precursor materials... | 11/29/2011 |
| 8058088 | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating Methods are disclosed including applying a layer of binder material onto an LED structure. A luminescent solution including an optical material suspended in a solution is atomized using a flow of pressurized gas, and the atomized luminescent solution is sprayed onto... | 11/15/2011 |
| 8058089 | Electromechanical memory array using nanotube ribbons and method for making same Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports... | 11/15/2011 |
| 8034649 | Solid state imaging device, method of manufacturing the same, and imaging apparatus A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on th... | 10/11/2011 |
| 8034650 | Fabrication method for a room temperature hydrogen sensor A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured bariu... | 10/11/2011 |
| 7993948 | Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device A method for fabricating an electrode by (i) depositing a palladium film on a p-type semiconductor layer; (ii) introducing an oxygen gas onto the palladium film to provide an oxygen ambient; (iii) oxidizing the palladium film adjacent to the semiconductor layer by a... | 08/09/2011 |
| 7989246 | Package method of micro-electro-mechanical system chip The present invention proposes a MEMS chip and a package method thereof. The package method comprises; making a capping wafer by: providing a first substrate and forming an etch stop layer on the first substrate; making a device wafer by: providing a second substrat... | 08/02/2011 |
| 7989245 | Method for fabricating image sensor An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a seco... | 08/02/2011 |
| 7981714 | Nitride based semiconductor device using nanorods and process for preparing the same Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanoro... | 07/19/2011 |
| 7977135 | Micron gap thermal photovoltaic device and method of making the same A method of making a micron gap thermal photovoltaic device includes forming at least one standoff on a photovoltaic substrate, depositing a sacrificial layer on the photovoltaic substrate and about the standoff, forming an emitter attached to the standoff and havin... | 07/12/2011 |
| 7977136 | Microelectromechanical systems structures and self-aligned high aspect-ratio combined poly and single-crystal silicon fabrication processes for producing same Disclosed are one-port and two-port microelectromechanical structures including variable capacitors, switches, and filter devices. High aspect-ratio micromachining is used to implement low-voltage, large value tunable and fixed capacitors, and the like. Tunable capa... | 07/12/2011 |
| 7972884 | Micromechanical device and method of manufacturing micromechanical device An example of the present invention is a micromechanical device including, a substrate in which a signal line is provided, a micromachine which is mounted on the substrate, is formed of a conductive material into a beam-like shape, is elastically deformed by a funct... | 07/05/2011 |
| 7972885 | Broadband imaging device and manufacturing thereof This invention relates to imaging device and its related transferring technologies to independent substrate able to attain significant broadband capability covering the wavelengths from ultra-violet (UV) to long-Infrared. More particularly, this invention is related... | 07/05/2011 |
| 7964426 | Solid-state image pickup device and manufacturing method thereof A solid-state image pickup device is provided in which a pixel forming region 4 and a peripheral circuit forming region 20 are formed on the same semiconductor substrate, a first element isolation portion is formed by an element isolation layer 21 | 06/21/2011 |
| 7951634 | Method and device for protecting interferometric modulators from electrostatic discharge A MEMS device such as an interferometric modulator includes an integrated ESD protection element capable of shunting to ground an excess current carried by an electrical conductor in the MEMS device. The protection element may be a diode and may be formed by deposit... | 05/31/2011 |
| 7943409 | Method of fabricating image sensor photodiodes using a multi-layer substrate and contact method and the structure thereof The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photod... | 05/17/2011 |
| 7939356 | Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact... | 05/10/2011 |
| 7939357 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of P type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is a P− region formed within an N-type region. The P− region is fo... | 05/10/2011 |
| 7939355 | Single-mask fabrication process for linear and angular piezoresistive accelerometers An accelerometer and a method of fabricating an integrated accelerometer comprises the steps of providing an SOI wafer with a selected resistivity to eliminate any need for additional doping of the SOI wafer, providing a single mask on the SOI wafer, and simultaneou... | 05/10/2011 |
| 7932115 | Method of producing photodiode and the photodiode A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diff... | 04/26/2011 |
| 7927902 | Methods of fabricating image sensors and image sensors fabricated thereby A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiv... | 04/19/2011 |
| 7927903 | Capacitive bypass An indirect connection to and across a photodiode array. The backside contact is used as one portion which connects to a capacitor. The capacitor forms a shunt across the bulk substrate, thus shunting across the series resistance of the substrate, and reducing the s... | 04/19/2011 |
| 7919344 | Image sensor and method for manufacturing the same Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A s... | 04/05/2011 |
| 7915065 | Wafer level sensing package and manufacturing process thereof A wafer level sensing package and manufacturing process thereof are described. The process includes providing a wafer having sensing chips, in which each sensing chip has a sensing area and pads; forming a stress release layer on a wafer surface; cladding a photores... | 03/29/2011 |
| 7910389 | Vertical semiconductor light-emitting device and method of manufacturing the same Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first... | 03/22/2011 |
| 7883916 | Optical sensor including stacked photosensitive diodes A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, whi... | 02/08/2011 |
| 7883917 | Semiconductor device with bonding pad A method for forming a semiconductor device with a bonding pad is disclosed. A first substrate having a device area and a bonding area is provided, wherein the first substrate has an upper surface and a bottom surface. Semiconductor elements are formed on the upper ... | 02/08/2011 |
| 7883918 | Multi-chip device and method for manufacturing the same A multi-chip device includes LED sensors for sensing light separated by a predetermined interval in a wafer, LEDs for emitting light formed over the wafer respectively corresponding to the LED sensors, a driving circuit formed between the LEDs over the wafer, an ins... | 02/08/2011 |
| 7879637 | CMOS solid-state imaging device and method of manufacturing the same as well as drive method of CMOS solid-state imaging device A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. Adjacent pixels are separated by an element isolation portion formed of a diffusion la... | 02/01/2011 |
| 7875480 | Sensor and method for making the same A method of making a sensor comprises substantially laterally growing at least one nanowire having at least two segments between two electrodes, whereby a junction or connection is formed between the at least two segments; and establishing a sensing material adjacen... | 01/25/2011 |
| 7875479 | Integration structure of semiconductor circuit and microprobe sensing elements and method for fabricating the same The present invention discloses an integration structure of a semiconductor circuit and microprobe sensing elements and a method for fabricating the same. In the method of the present invention, a semiconductor circuit is fabricated on one surface of a semiconductor... | 01/25/2011 |
| 7871846 | Thin-film transistor, TFT-array substrate, liquid-crystal display device and method of fabricating the same A thin-film transistor includes a gate layer, a gate insulting layer, a semiconductor layer, a drain layer, a passivation layer (each of which being formed on or over an insulating substrate), and a conductive layer formed on the passivation layer. The conductive la... | 01/18/2011 |
| 7858420 | Microelectronic imaging units and methods of manufacturing microelectronic imaging units Methods for manufacturing microelectronic imaging units and microelectronic imaging units that are formed using such methods are disclosed herein. In one embodiment, a method includes coupling a plurality of singulated imaging dies to a support member. The individua... | 12/28/2010 |
