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| Number | Title | Issue Date |
| 8183132 | Methods for fabricating group III nitride structures with a cluster tool The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element an... | 05/22/2012 |
| 8168515 | Method for manufacturing semiconductor substrate A first silicon carbide substrate having a first back-side surface and a second silicon carbide substrate having a second back-side surface are prepared. The first and second silicon carbide substrates are placed so as to expose each of the first and second back-sid... | 05/01/2012 |
| 8163630 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device by thinning a substrate by grinding, and performing ion implantation. In a diode in which a P anode layer and an anode electrode are formed at a side of a right face of an N− drift layer, and an N+ | 04/24/2012 |
| 8163631 | Methods for discretized processing and process sequence integration of regions of a substrate The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes us... | 04/24/2012 |
| 8158495 | Process for forming a silicon-based single-crystal portion Silicon-based single-crystal portions are produced on a surface of a substrate, selectively in zones where a single-crystal material is initially exposed. To do this, a layer is firstly formed over the entire surface of the substrate, using a silicon precursor of th... | 04/17/2012 |
| 8148241 | Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films One embodiment of depositing a gallium nitride (GaN) film on a substrate comprises providing a source of indium (In) and gallium (Ga) and depositing a monolayer of indium (In) on the surface of the gallium nitride (GaN) film. The monolayer of indium (In) acts as a s... | 04/03/2012 |
| 8143143 | Process for fabricating nanowire arrays A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is bloc... | 03/27/2012 |
| 8143144 | Semiconductor nanowire and its manufacturing method A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase g... | 03/27/2012 |
| 8143145 | Method and arrangement for producing an N-semiconductive indium sulfide thin layer A method of producing, at atmospheric pressure, an n-type semiconductive indium sulfide thin film on a substrate using an indium-containing precursor, hydrogen sulfide as a reactive gaseous precursor, and an inert carrier gas stream includes cyclically repeating fir... | 03/27/2012 |
| 8138067 | Method and system for the synthesis of semiconductor nanowires The invention provides a system and method for producing semiconductor nanowires, for example germanium or Silicon, grown by solution decomposition comprising the steps of heating at least one high boiling point solvent to its reaction temperature in a chamber and i... | 03/20/2012 |
| 8138068 | Method to form nanopore array A method of forming nanopore is provided that includes forming a first structure on a substrate, and forming a second structure overlying the first structure. An intersecting portion of the first and the second structures is etched to provide an opening of nanopore ... | 03/20/2012 |
| 8129260 | Semiconductor substrates having low defects and methods of manufacturing the same A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group ... | 03/06/2012 |
| 8124504 | Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing th... | 02/28/2012 |
| 8124503 | Carbon nanotube diameter selection by pretreatment of metal catalysts on surfaces A new and useful nanotube growth substrate conditioning processes is herein disclosed that allows the growth of vertical arrays of carbon nanotubes where the average diameter of the nanotubes can be selected and/or controlled as compared to the prior art. ... | 02/28/2012 |
| 8119504 | Method for transferring a nano material from a substrate to another substrate A method for transferring a nano material formed on a first substrate through deposition techniques to a second substrate, includes: (A) contacting the second substrate with a free end of the nano material on the first substrate; (B) heating the first substrate so t... | 02/21/2012 |
| 8119503 | Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby Methods of forming integrated circuit devices include forming an etch stop layer on a surface of a semiconductor substrate and forming a first interlayer insulating layer on the etch stop layer. The first interlayer insulating layer is patterned to define an opening... | 02/21/2012 |
| 8114760 | Method for manufacturing microcrystalline semiconductor and thin film transistor A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is... | 02/14/2012 |
| 8110482 | Miscut semipolar optoelectronic device A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow... | 02/07/2012 |
| 8105918 | Semiconductor device and method of fabricating the same including forming pillar neck patterns A semiconductor device and method of fabricating the same includes preparing a substrate, forming a plurality of conductive layer patterns on the substrate, forming a gate insulation layer on sidewalls of the conductive layer patterns, forming a pillar neck pattern ... | 01/31/2012 |
| 8105919 | In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on ... | 01/31/2012 |
| 8101508 | Silicon substrate and manufacturing method thereof A silicon substrate is manufactured from a single crystal silicon that is doped with phosphorus (P) and is grown by a CZ method to have a predetermined carbon concentration and a predetermined initial oxygen concentration. An n+ epitaxial layer or an n+ implantation... | 01/24/2012 |
| 8097527 | Method of forming epitaxial layer A method of forming an epitaxial layer on a silicon substrate includes (a) providing a silicon substrate; (b) performing a wet-cleaning process onto the silicon substrate; (c) performing a first plasma cleaning process onto the wet-cleaned silicon substrate by provi... | 01/17/2012 |
| 8084400 | Methods for discretized processing and process sequence integration of regions of a substrate The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes us... | 12/27/2011 |
| 8084337 | Growth of III-V compound semiconductor nanowires on silicon substrates The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior of the growing of the nanowire, of providing group III or group V atoms to ... | 12/27/2011 |
| 8084336 | Oscillator apparatus An apparatus including a resonator electrode and a second electrode separated from the resonator electrode by a gap having a size that facilitates electron transfer across the gap, wherein the resonator electrode is a resonator electrode mounted for oscillatory moti... | 12/27/2011 |
| 8080466 | Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a ni... | 12/20/2011 |
| 8076218 | Method for the production of photo-patterned carbon electronics A method for the manufacture of carbon based electrical components is herein presented. In the method a wafer substrate is provided upon which a first layer of carbon based semiconductor is deposited. The first layer of carbon based semiconductor is introduced to a ... | 12/13/2011 |
| 8076219 | Reduction of watermarks in HF treatments of semiconducting substrates A process for reducing or suppressing the appearance of watermarks in a hydrophobic surface of a semiconductor substrate prepared as a base substrate for epitaxial growth. The process includes cleaning the hydrophobic surface of the semiconductor substrate with an a... | 12/13/2011 |
| 8076217 | Controlled quantum dot growth The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a ... | 12/13/2011 |
| 8067298 | Relaxation of a strained material layer with application of a stiffener The invention relates to methods of fabricating a layer of at least partially relaxed material, such as for electronics, optoelectronics or photovoltaics. An exemplary method includes supplying a structure that includes a layer of strained material situated between ... | 11/29/2011 |
| 8067340 | Methods for discretized processing and process sequence integration of regions of a substrate The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes us... | 11/29/2011 |
| 8067297 | Process for deposition of semiconductor films Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional c... | 11/29/2011 |
| 8067299 | Nanoelectronic structure and method of producing such The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. Th... | 11/29/2011 |
| 8058154 | Methods for discretized processing and process sequence integration of regions of a substrate The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes us... | 11/15/2011 |
| 8058155 | Integrated nanowires/microelectrode array for biosensing The present invention provides a method for the controlled synthesis of nanostructures on the edges of electrodes and an apparatus capable of optical and electrochemical sensing. In accordance with the present invention, a method of fabricating nanowires is provided... | 11/15/2011 |
| 8043942 | Method for producing core-shell nanowires, nanowires produced by the method and nanowire device comprising the nanowires Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable ca... | 10/25/2011 |
| 8039370 | Method of transferring a layer onto a liquid material A method for transferring a layer onto a support includes transferring the layer, assembled on an initial substrate, onto a liquid layer that has been previously deposited on the support. The layer is subsequently released from the initial substrate by chemical etch... | 10/18/2011 |
| 8039368 | Nanogaps: methods and devices containing same Disclosed are methods of fabricating nanogaps and various devices composed of nanogaps. The nanogap devices disclosed herein can be used as in a number of electronic, photonic and quantum mechanical devices, including field-effect transistors and logic circuits.... | 10/18/2011 |
| 8039369 | Semiconductor light-emitting element and method of producing the same There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 μm. A semiconductor light-emitting element has a first GaAs layer, a second InAs t... | 10/18/2011 |
| 8030186 | Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational c... | 10/04/2011 |
